Ge-on-Si modulators operating at mid-infrared wavelengths up to 8 μm

作     者：TIANTIAN LI MILOS NEDELJKOVIC NANNICHA HATTASAN WEI CAO ZHIBO QU CALLUM GLITTLEJOHNS JORDI SOLER PENADES LORENZO MASTRONARDI VINITA MITTAL DANIEL BENEDIKOVIC DAVID JTHOMSON FREDERIC YGARDES HEQUAN WU ZHIPING ZHOU GORAN ZMASHANOVICH 

作者机构：Optoelectronics Research CentreUniversity of SouthamptonSouthampton SO171BJUK State Key Laboratory of Advanced Optical Communication Systems and NetworksSchool of Electronics Engineering and Computer SciencePeking UniversityBeijing100871China Silicon Technologies Centre of ExcellenceNanyang Technological UniversitySingapore639798Singapore Centre de Nanosciences et de NanotechnologiesCNRSUniv.Paris-SudUniversitéParis-SaclayC2N-Palaiseau91120PalaiseauFrance 

出 版 物：《Photonics Research》 (光子学研究（英文版）)

年 卷 期：2019年第7卷第8期

页      面：828-836页

核心收录：

学科分类：080902[工学-电路与系统] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 

基　　金：Engineering and Physical Sciences Research Council(EPSRC)(EP/N00762X/1,EP/N013247/1,EP/R004951/1) Royal Academy of Engineering(RF201617/16/33) National Research Foundation Singapore(NRF)(NRFCRP12-2013-04) Royal Society(UF150325) European Project Cosmicc(H2020-ICT-27-2015-688516) China Scholarship Council(CSC) State Key Laboratory of Advanced Optical Communication Systems and Networks,China European Research Council under the European Union’s Seventh Framework Programme(FP7/2007-2013) H2020 European Research Council(ERC)(291216) 

主　　题：PIN frame EAM Ge-on-Si modulators 

摘      要：We report mid-infrared Ge-on-Si waveguide-based PIN diode modulators operating at wavelengths of 3.8 and8 μm. Fabricated 1-mm-long electro-absorption devices exhibit a modulation depth of 35 dB with a 7 V forward bias at 3.8 μm, and a similar 1-mm-long Mach–Zehnder modulator has a Vπ· L of 0.47 V · cm. Driven by a 2.5 Vpp RF signal, 60 MHz on-off keying modulation was demonstrated. Electro-absorption modulation at 8 μm was demonstrated preliminarily, with the device performance limited by large contact separation and high contact resistance.