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Enhancement of pattern quality in maskless plasmonic lithography via spatial loss modulation

Microsystems & Nanoengineering 2023年第2期9卷 307-319页

作者： Dandan Han Sen Deng tianchun ye Yayi Wei University of Chinese Academy of Sciences School of Integrated CircuitsBejing 100049China Chinese Academy of Sciences Institute of MicroelectronicsBeijing 100029China

Plasmonic lithography,which uses the evanescent electromagnetic(EM)fields to generate image beyond the diffraction limit,has been successfully demonstrated as an alternative lithographic technology for creating sub-1o nm ***,the obtained photoresist pattern contour in general exhibits a very poor fidelity due to the near-field optical proximity effect(OPE),which is far below the minimum requirement for *** the near-field OPE formation mechanism is important to minimize its impact on nanodevice fabrication and improve its lithographic *** this work,a point-spread function(PSF)generated by a plasmonic bowtie-shaped nanoaperture(BNA)is employed to quantify the photon-beam deposited energy in the near-field patterning *** achievable resolution of plasmonic lithography has successfully been enhanced to approximately 4 nm with numerical simulations.A field enhancement factor(F)as a function of gap size is defined to quantitatively evaluate the strong near-field enhancement effect excited by a plasmonic BNA,which also reveals that the high enhancement of the evanescent field is due to the strong resonant coupling between the plasmonic waveguide and the surface plasmon waves(SPWs).However,based on an investigation of the physical origin of the near-field OPE,and the theoretical calculations and simulation results indicate that the evanescent-field-induced rapid loss of high-k information is one of the main optical contributors to the near-feld ***,an analytic formula is introduced to quantitatively analyze the effect of the rapidly decaying feature of the evanescent field on the final exposure pattern ***,a fast and effective optimization method based on the compensation principle of the exposure dose is proposed to reduce the pattern distortion by modulating the exposure map with dose *** proposed pattern quality enhancement method can open new possibilities in the manufacture of nan

关键词： pattern effect distortion

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Modeling and optimal design of multilayer thermal cantilever microactuators

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Science China(Technological Sciences) 2009年第5期52卷 1167-1170页

作者： FU JianYu CHEN DaPeng ye tianchun JIAO BinBin OU Yi Silicon Device and Integration Technology Department Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China

A model of curvature and tip deflection of multilayer thermal cantilever actuators is *** sim-plified expression received from the model avoids inverting complex matrices enhances understanding and makes it easier to optimize the structure *** is performed,the modeled and experimental results demonstrate the validity of the model,and it also indicates that Young's module makes great contribution to the deflection;therefore,thin layers cannot be ignored arbitrarily.

关键词： thermal microactuator tip deflection multilayer model optimization

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An output amplitude configurable wideband automatic gain control with high gain step accuracy

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Journal of Semiconductors 2012年第2期33卷 111-116页

作者： He Xiaofeng Mo Taishan Ma Chengyan ye tianchun Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China Hangzhou Zhongke Microelectronics Co LtdHangzhou 310053China

An output amplitude configurable wideband automatic gain control（AGC） with high gain step accuracy for the GNSS receiver is *** amplitude of an AGC is configurable in order to cooperate with baseband chips to achieve interference suppression and be compatible with different full range *** what’s more,the gain-boosting technology is introduced and the circuit is improved to increase the step accuracy.A zero,which is composed by the source feedback resistance and the source capacity,is introduced to compensate for the *** AGC is fabricated in a 0.18μm CMOS *** AGC shows a 62 dB gain control range by 1 dB each step with a gain error of less than 0.2 *** AGC provides 3 dB bandwidth larger than 80 MHz and the overall power consumption is less than 1.8 mA,and the die area is 800 x 300μm^2.

关键词： automatic gain control output amplitude configurable high gain step accuracy

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Research on the surface passivation of nanostructure-textured crystalline silicon solar cell

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Science China(Technological Sciences) 2013年第1期56卷 120-124页

作者： DOU BingFei JIA Rui LI HaoFeng CHEN Chen MENG YanLong LIU XinYu ye tianchun Institute of Microelectronics Chinese Academy of Sciences

Nanostructure-textured solar cell owns unique properties but has some shortages especially in its fabrication and *** this paper,nanostructures for crystalline silicon solar cell have been synthesized by controllable method based on silver catalyzed chemical *** this way,only the front surface of cell is etched and rear surface is *** was found that cells textured via the new method obtained equally excellent optical while superior electrical properties compared with those textured via traditional HF/AgNO3 *** V OC and I SC of the cell were improved by 6% and 11%,*** the cells were passivated via a bi-layer passivation(SiO2 & SiN x),in contrast to traditional SiN x *** was also found that cells with new passivation exhibited improved V OC and I SC by 4% and 25%,*** encouraging results can provide fundamental data for developing the nanostructure-textured crystalline silicon solar cell in following researches.

关键词： solar cell silicon nanostructure silver catalyzed chemical etching passivation

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Study on electrothermally actuated cantilever array for nanolithography

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Science China(Technological Sciences) 2010年第5期53卷 1184-1189页

作者： FU JianYu,CHEN DaPeng & ye tianchun Integrated Circuit Advanced Process Center,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China Integrated Circuit Advanced Process Center Institute of Microelectronics Chinese Academy of Sciences Beijing China

Nanolithography is a patterning technique for the fabrication of nano-scale structures.A promising method of nanolithography known as scanning probe lithography has particularly extensive applications for its high resolution,high reliability,and simple *** this paper,a novel electrothermally actuated cantilever with integrated heater,thermal conductor and actuator for scanning probe lithography is *** are designed in an 8×4 *** models are presented to simulate the temperature distribution,deflection and thermal crosstalk of the cantilever *** structure is successfully *** is demonstrated that this structure can produce a tip deflection of 16.9 μm at an actuation current of 5.5 mA and the thermal crosstalk between the cantilevers is neglected.

关键词： nanolithography scanning probe lithography electrothermal actuation

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200 nm gate-length GaAs-based MHEMT devices by electron beam lithography

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Chinese Science Bulletin 2008年第22期53卷 3585-3589页

作者： XU JingBo ZHANG HaiYing WANG WenXin LIU Liang LI Ming FU XiaoJun NIU JieBin ye tianchun Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China Institute of Physics Chinese Academy of Science Beijing 100080 China

GaAs-based metamorphic HEMTs (MHEMT) consist of GaAs substrates and InP-based epitaxial structure, and have the advantages of both InP HEMT's excellent performances and GaAs-based HEMT's mature processes. GaAs-based MHEMTs were applied to millimeter-wave low-noise, high-power applications and systems. The current gain cut-off frequency (fT) and the maximum oscillation frequency (fmax) are important performance parameter of GaAs-based MHEMTs, and they are limited by the gate-length mainly. Electron beam lithography is one of the lithography technologies which can be used to realize the deep submicron gate-length. The 200 nm gate-length GaAs-based MHEMTs have been fabricated by electron beam lithography. In order to reduce the parasite gate capacitance and gate resistance, a trilayer resist structure was used to pattern the T-gate resist profile. Excellent DC, high frequency and power performances have been obtained. FT and fmax are 105 GHz, 70 GHz respectively. The research is very helpful to obtain higher performance GaAs-based MHEMTs.

关键词：电子束 MHEMT 电流电子频率

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Research on ultra-small textured surface of multicrystalline silicon solar cell

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Science China(Technological Sciences) 2013年第4期56卷 952-956页

作者： LI HaoFeng JIA Rui DOU BingFei CHEN Chen XING Zhao YANG YongZhou DING WuChang MENG YanLong LIU XinYu ye tianchun LI ShangQing Institute of Microelectronics Chinese Academy of Sciences Research Center for Advanced Solar Cells Chinese Academy of Sciences Huasheng Ruide Municipal Engineering Co. Ltd

The ultra-small textured surface of multicrystalline silicon solar cell,prepared by electroless chemical-etching method,shows an excellent anti-reflection property over a wide spectral bandwidth.A novel back surface protection method and front surface passivation method have been used in the multicrystalline solar cells with ultra-small textured *** these improvements,the back surface remains intact after the etch process and the efficient minority lifetime is apparently *** test result shows that the solar cell with ultra-small textured surface can obtain better electrical performances by these improvements.

关键词： mc-Si solar cell ultra-small texture anti-reflection surface passivation

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A NEW LOW-COST DEMODULATOR FOR 2.4 GHZ ZIGBEE RECEIVERS

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Journal of Electronics(China) 2009年第2期26卷 252-257页

作者： Yu Yunfeng Meng Xin Xiao Shimao Ma Chengyan ye tianchun Institute of Microelectronics of Chinese Academy of Sciences（CAS） Beijing 100029 China Hangzhou Microelectronics of Chinese Academy of Science Ltd. Hangzhou 310053 China

A new low-cost demodulator for ZigBee receivers satisfying requirements of IEEE802.15.4 standard is presented,which is designed for ISM 2.4 GHz band and based on Zero-IF *** demodulator extracts symbols directly from baseband signal rather than recovering PN code chips,so its structure is *** main techniques are used to improve the performance of *** is Phase-Axis Crossing Detector(PACD) which detects the phase correlation of baseband *** other is symbol synchronization and sampling clock correction *** result shows that this demodulator performance,Symbol Error Rate(SER) and Packet Error Rate(PER) meet IEEE 802.15.4TM standard requirements and the demodulator can handle frequency offset in excess of 200 kHz,involving a Zero-IF receiver with a Noise Figure(NF) lower than 17 dB,which is easily imple-mented in standard CMOS technology.

关键词： ZigBee Demodulator Minimum Shift Keying(MSK) Low-cost Symbol synchronization

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Design and implementation of channel estimation for low-voltage power line communication systems based on OFDM

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Journal of Semiconductors 2012年第10期33卷 129-133页

作者：赵慧冬黑勇乔树山叶甜春 Institution of Microelectronics Chinese Academy of Sciences

An optimized channel estimation algorithm based on a time-spread structure in OFDM low-voltage power line communication（PLC） systems is proposed to achieve a lower bit error rate（BER）.This paper optimizes the best maximum multi-path delay of the linear minimum mean square error（LMMSE） algorithm in time-domain spread OFDM *** results indicate that the BER of the improved method is lower than that of conventional LMMSE algorithm,especially when the signal-to-noise ratio（SNR） is lower than 0 *** the LMMSE algorithm and the proposed algorithm are implemented and fabricated in CSMC 0.18μm technology. This paper analyzes and compares the hardware complexity and performance of the two *** indicate that the proposed channel estimator has better performance than the conventional estimator.

关键词： OFDM PLC channel estimation time-domain spread VLSI

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Top-gated graphene field-effect transistors on SiC substrates

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Chinese Science Bulletin 2012年第19期57卷 2401-2404页

作者： MA Peng JIN Zhi GUO JianNan PAN HongLiang LIU XinYu ye tianchun JIA YuPing GUO LiWei CHEN XiaoLong Department of Microwave IC Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Research&Development Center for Functional Crystals Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing 100190China

We report on a demonstration of top-gated graphene field-effect transistors(FETs) fabricated on epitaxial SiC *** stacks,benzocyclobutene and atomic layer deposition Al2O3,are used as the gate dielectrics to maintain intrinsic carrier mobility of *** graphene FETs exhibit n-type transistor characteristics and the drain current is nearly linear dependence on gate and drain *** a low field-effect mobility of 40 cm2/(V s),a maximum cutoff frequency of 4.6 GHz and a maximum oscillation frequency of 1.5 GHz were obtained for the graphene devices with a gate length of 1 μm.

关键词： graphene radio frequency(RF) field-effect transistor(FET) SiC

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