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Preliminary sensitivity study on an life cycle assessment(LCA)tool via assessing a hybrid timber building

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Journal of Bioresources and Bioproducts 2020年第2期5卷 108-113页

作者： tiancheng Wu Meng gong Jennifer Xiao Faculty of Forestry and Environmental Management University of New BrunswickFrederictonNB E3C2G6Canada Department of Biology Queen’s UniversityKingstonON K7L3N6Canada

In order to address concerns related to global warming and increased atmospheric carbon content,the life cycle assessment(LCA)tool has demonstrated usefulness in the building and construction sector.The LCA is used to evaluate environmental impacts concerning all stages of the building process from“cradle”to“grave”.The LCA helps promote sustainable development by considering environmental indicators such as stratospheric ozone depletion,eutrophication,global warming potential,and many more.It is of an interest to know the degree of impact on a given environ-mental indicator if an input is changed in terms of the type or amount of the materials used.The LCA software Athena IE4B was employed to analyze data of a selected timber building.This study was aimed at evaluating the sensitivity of LCA analysis on a hybrid timber building,which was done via two case studies.Case 1 focused on changes in the volume of wood materials,meanwhile Case 2 focused on simultaneous changes in the volume of materials for wood,steel,and concrete.In Case 1,it was observed increasing wood materials increased environmental indicators,with stratospheric ozone depletion being the most sensitive and global warming potential as the least sensitive.Case 2 discovered that proportionally increasing wood materials in relation to steel and concrete materials decreased environmental indicators,with eutrophication being the most sensitive and stratospheric ozone depletion as the least sensitive.This study helped support the feasibility of using Athena IE4B for LCA analysis in the initial assessment of a building.

关键词： Life cycle assessment Hybrid timber structure Environmental indicator Sensitivity study

Flexible Hf_(0.5)Zr_(0.5)O_(2)ferroelectric thin films on polyimide with improved ferroelectricity and high flexibility

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Nano Research 2022年第4期15卷 2913-2918页

作者： Yuting Chen Yang Yang Peng Yuan Pengfei Jiang Yuan Wang Yannan Xu Shuxian Lv Yaxin Ding Zhiwei Dang Zhaomeng Gao Tiancheng Gong Yan Wang Qing Luo Key Laboratory of Microelectronic Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China Department of Mathematics and Theories Peng Cheng LaboratoryNo.2Xingke 1st StreetNanshanShenzhen 518000China

Flexible memory devices are promising for information storage and data processing applications in portable,wearable,and smart electronics operating under curved conditions.In this work,we realized high-performance flexible ferroelectric capacitors based on Hf_(0.5)Zr_(0.5)O_(2)(HZO)thin film by depositing a buffer layer of Al_(2)O_(3)on polyimide(PI)substrates using atomic layer deposition(ALD).The flexible ferroelectric HZO films exhibit high remnant polarization(Pr)of 21μC/cm^(2).Furthermore,deterioration of polarization,retention,and endurance performance was not observed even at a bending radius of 2 mm after 5,000 bending cycles.This work marks a critical step in the development of high-performance flexible HfO_(2)-based ferroelectric memories for next-generation wearable electronic devices.

关键词： ferroelectric Hf_(0.5)Zr_(0.5)O_(2)(HZO) Al_(2)O_(3)buffer layer flexible

Transport mechanism in Hf0.5Zr0.5O2-based ferroelectric diodes

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Science China(Information Sciences) 2023年第12期66卷 295-296页

作者： Haoran YU Tiancheng Gong Peng YUAN Yuan WANG Zhaomeng GAO Xiaoxin XU Ying SUN Ran CHENG Jianfeng GAO Junfeng LI Bing CHEN Qing LUO Key Laboratory of Microelectronics Devices and Integration Technology Institute of MicroelectronicsChinese Academy of Sciences University of Chinese Academy of Sciences School of Micro-Nano Electronics Zhejiang University

Doped HfO2, as an emerging ferroelectric material, could overcome the shortcomings of traditional ferroelectrics [1].Hf0.5Zr0.5O2(HZO) is a good choice for Hf-doped materials because of its excellent ferroelectric properties and mature preparation process. In our previous studies, we proposed a new HZO switchable ferroelectric diode(FE diode) with several advantages, such as high operating speed,

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Freely switching between ferroelectric and resistive switching in Hf0.5Zr0.5O2 films and its application on high accuracy on-chip deep neural networks

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Science China(Information Sciences) 2023年第2期66卷 267-276页

作者： Pengfei JIANG Kunran XU Jie YU Yannan XU Peng YUAN Yuan WANG Yuting CHEN Yaxin DING Shuxian LV Zhiwei DANG Tiancheng Gong Yang YANG Yan WANG Qing LUO Key Laboratory of Microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences University of Chinese Academy of Sciences School of Microelectronics Xidian University Peng Cheng Laboratory

The Hf0.5Zr0.5O2(HZO)-based ferroelectric field-effect transistor(Fe FET) synapse is a promising candidate for at-scale deep neural network(DNN) applications, because of its high symmetry, great accuracy and fast operation speed. However, the degradation of the remanent polarization(Pr) over time caused by the depolarization field has not been effectively resolved, greatly affecting the accuracy of the trained DNN. In this study, we demonstrate a ferroelectric(FE)-resistive switching(RS) switchable synapse using the FE mode for high-speed weight training and the RS mode for stable weight storage to overcome accuracy degradation. The FE-RS hybrid characteristic is accomplished by an HZO-based metal-ferroelectricmetal(MFM) capacitor with asymmetric electrodes, and the best FE endurance, as well as the most reliable RS behavior, is demonstrated by testing several electrodes materials. High memory windows are achieved in both FE and RS modes. Through this design, excellent accuracy is maintained over time, as verified by network simulation.

关键词： Hf 0.5 Zr 0.5 O 2 films ferroelectric resistive switching accuracy on-chip DNN

A scientometric review of biochar preparation research from 2006 to 2019

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Biochar 2021年第3期3卷 283-298页

作者： Yuxin Jiao Dongyang Li Ming Wang Tiancheng Gong Mengyang Sun Tianxue Yang State Key Laboratory of Environmental Criteria and Risk Assessment Chinese Research Academy of Environmental SciencesBeijing 100012People’s Republic of China College of Eco-Environmental Engineering Guizhou Minzu UniversityGuiyang 550025People’s Republic of China

Biochar is the carbon-rich product obtained from the thermochemical conversion of biomass under oxygen-limited condi-tions.Preparation methods contribute to biochar properties,which are widely concerned in the agronomic and environmental benefits of agro-ecosystems.This research aims to use bibliometrics methods to comprehensively and objectively analyze the research trends in the global biochar production field from 2006 to 2019 based on the Web of Science Core Collection database.The results showed that 1434 papers related to biochar preparation were published,which gradually increased each year.The research topics were diversified,which were mainly divided into“Environmental Sciences and Ecology,”“Engineering”and“Agriculture”.Moreover,Bioresource Technology was the most published journal contained biochar preparation.Authors from China had the most publications,followed by the US,Australia and the UK.Meanwhile,Yong Sik Ok from Korea University contributed most of the publications and had the highest H-index.Keywords analysis indicated that biochar preparation by pyrolysis was a current hotspot,of which microwave and hydrothermal were a future research trend.Besides,gasification would be used to develop new biomass energy.Biochar has the characteristics of high pH,high specific surface area,high carbon content,and rich functional groups.It is mainly used in soil improvement,water pollutant adsorption,carbon sequestration and emission reduction,and energy storage materials,etc.Furthermore,raw materials,pyrolysis temperature and pyrolysis time will also affect its characteristics and applications.It is expected that this study may provide insight into the future research interests regarding biochar preparation.

关键词： Biochar preparation Bibliometrics Research trends Hotspots analysis

Investigation of weight updating modes on oxide-based resistive switching memory synapse towards neuromorphic computing applications

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Science China(Information Sciences) 2021年第11期64卷 253-254页

作者： Qingting DING Tiancheng Gong Jie YU Xiaoxin XU Xiaoyan LI Hangbing LV Jianguo YANG Qing LUO Peng YUAN Feng ZHANG Ming LIU Institute of Microelectronics Chinese Academy of Sciences University of Chinese Academy of Sciences

Dear editor,Memristors, resistive random access memory(RRAM) devices when used in memory applications, have attracted significant interest recently as a promising candidate for neuromorphic computing systems due to their excellent size scalability, fast switching speed and low energy consumption [1].In order to obtain high learning accuracy in neural networks based on back propagation learning rule, the updating behavior of synaptic linear symmetric weights is important [2].

关键词： Gate Voltage Ramping (GVR) Constant Drain Voltage (CDV) Time Lag Plot RTN neuromorphic computing

Highly uniform and nonlinear selection device based on trapezoidal band structure for high density nano- crossbar memory array

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Nano Research 2017年第10期10卷 3295-3302页

作者： Qing Luo Xiaoxin Xu Hangbing Lv Tiancheng Gong Shibing Long Qi Liu Ling Li Ming Liu Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China University of Chinese Academy of Sciences Beijing 100049 China Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing 211800 China

闩数组为完成二终端的功能的设备的高密度的集成提供一条划算的途径。然而，溜的当前的问题，能导致读的失败，是在闩数组的严重挑战。从 unselected 房间禁止溜的水流，单个选择设备的集成是必要的。在这个工作，我们报导展出在氧化物... 详细信息

闩数组为完成二终端的功能的设备的高密度的集成提供一条划算的途径。然而，溜的当前的问题，能导致读的失败，是在闩数组的严重挑战。从 unselected 房间禁止溜的水流，单个选择设备的集成是必要的。在这个工作，我们报导展出在氧化物调节缺点的集中形成的 trapezoidal 乐队结构的一个新奇的道 x -based 选购者。突出的特征象高当前的密度那样(1 麻省穩 ? 楤瑳楲畢楴湯 ? 湩楳敤琠敨瘠物獵戭獡摥丠獐漠 ? 楳業湡瘠物獵?

关键词：存储器阵列功能器件非线性高密度梯形带均匀性带结构纳米

Microscopic mechanism of imprint in hafnium oxide-based ferroelectrics

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Nano Research 2022年第4期15卷 3667-3674页

作者： Peng Yuan Ge-Qi Mao Yan Cheng Kan-Hao Xue Yunzhe Zheng Yang Yang Pengfei Jiang Yannan Xu Yuan Wang Yuhao Wang Yaxin Ding Yuting Chen Zhiwei Dang Lu Tai Tiancheng Gong Qing Luo Xiangshui Miao Qi Liu Key Laboratory of Microelectronic Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesNo.3Beitucheng West RoadBeijing 100029China University of Chinese Academy of Sciences 19 Yuquan RoadBeijing 100049China School of Integrated Circuits School of Optical and Electronic InformationHuazhong University of Science and Technology1037 Luoyu RoadWuhan 430074China Key Laboratory of Polar Materials and Devices(MOE) Department of ElectronicsEast China Normal University100 Guilin RoadShanghai 430079China Department of Mathematics and Theories Peng Cheng LaboratoryNo.2Xingke 1st StreetShenzhen 518055China

Hafnia-based ferroelectrics have greatly revived the field of ferroelectric memory(FeRAM),but certain reliability issues must be satisfactorily resolved before they can be widely applied in commercial memories.In particular,the imprint phenomenon severely jeopardizes the read-out reliability in hafnia-based ferroelectric capacitors,but its origin remains unclear,which hinders the development of its recovery schemes.In this work,we have systematically investigated the imprint mechanism in TiN/Hf_(0.5)Zr_(0.5)O_(2)(HZO)/TiN ferroelectric capacitors using experiments and first-principles calculations.It is shown that carrier injection-induced charged oxygen vacancies are at the heart of imprint in HZO,where other mechanisms such as domain pinning and dead layer are less important.An imprint model based on electron de-trapping from oxygen vacancy sites has been proposed that can satisfactorily explain several experimental facts such as the strong asymmetric imprint,leakage current variation,and so forth.Based on this model,an effective imprint recovery method has been proposed,which utilizes unipolar rather than bipolar voltage inputs.The remarkable recovery performances demonstrate the prospect of improved device reliability in hafnia-based FeRAM devices.

关键词： hafnia-based ferroelectric imprint build-in electric field oxygen vacancy recovery

基于正态信息扩散原理的极值型工程参数概率分布推断方法

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中南大学学报（自然科学版） 2020年第6期51卷 1692-1702页

作者：宫凤强王天成黄天朗中南大学资源与安全工程学院湖南长沙410083 东南大学土木工程学院江苏南京211189

在工程可靠度分析中存在大量的极值型工程参数,为了获得这类参数的最优概率分布,提出基于正态信息扩散原理的极值型工程参数概率分布推断方法。在考虑偏度的"3σ"统计原理的截尾区间下,以年最大标准风压和内摩擦角样本为例,分别利用正... 详细信息

在工程可靠度分析中存在大量的极值型工程参数,为了获得这类参数的最优概率分布,提出基于正态信息扩散原理的极值型工程参数概率分布推断方法。在考虑偏度的"3σ"统计原理的截尾区间下,以年最大标准风压和内摩擦角样本为例,分别利用正态信息扩散分布和极值型分布拟合2组样本,并运用K-S方法进行假设检验。为了考察样本个数对2种分布在拟合精度方面的影响,利用Monte-Carlo方法生成母函数为极值型分布的8组模拟样本,样本个数分别为15,20,30,50,100,200,500和1 000,并采用K-S检验法对不同样本个数下推断得到的概率分布进行检验。结合正态信息扩散分布的拟合优势,将其应用于核管道工程最大腐蚀深度预测。研究结果表明:不论是实际工程样本还是模拟样本,正态信息扩散分布和极值型分布均通过K-S检验,其中正态信息扩散分布的检验值均低于极值型分布的检验值;随着样本个数增加,正态信息扩散分布表现出更好的收敛优势。正态信息扩散分布的累积概率在10-4误差量级上表现出等于1的效果,而极值型分布的累积概率在同样的误差量级上达不到1。算例结果表明:利用正态信息扩散分布作为核管道腐蚀深度的预测模型,能够更加精确地预测其最大腐蚀深度。

关键词：岩土工程可靠度极值型参数最优概率分布正态信息扩散

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