Freely switching between ferroelectric and resistive switching in Hf0.5Zr0.5O2 films and its application on high accuracy on-chip deep neural networks
Freely switching between ferroelectric and resistive switching in Hf0.5Zr0.5O2 films and its application on high accuracy on-chip deep neural networks作者机构：Key Laboratory of Microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences University of Chinese Academy of Sciences School of Microelectronics Xidian University Peng Cheng Laboratory
出 版 物：《Science China(Information Sciences)》 (中国科学:信息科学(英文版))
年 卷 期：2023年第66卷第2期
页 面：267-276页
核心收录：
学科分类：0710[理学-生物学] 08[工学] 081104[工学-模式识别与智能系统] 0805[工学-材料科学与工程（可授工学、理学学位）] 0811[工学-控制科学与工程] 0812[工学-计算机科学与技术（可授工学、理学学位）]
基 金：supported in part by National Key Research and Development Program of China (Grant No. 2017YFA0206102) National Natural Science Foundation of China (Grant Nos. 61922083, 61904200, 61974049) Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDB44000000)
主 题：Hf 0.5 Zr 0.5 O 2 films ferroelectric resistive switching accuracy on-chip DNN
摘 要：The Hf0.5Zr0.5O2(HZO)-based ferroelectric field-effect transistor(Fe FET) synapse is a promising candidate for at-scale deep neural network(DNN) applications, because of its high symmetry, great accuracy and fast operation speed. However, the degradation of the remanent polarization(Pr) over time caused by the depolarization field has not been effectively resolved, greatly affecting the accuracy of the trained DNN. In this study, we demonstrate a ferroelectric(FE)-resistive switching(RS) switchable synapse using the FE mode for high-speed weight training and the RS mode for stable weight storage to overcome accuracy degradation. The FE-RS hybrid characteristic is accomplished by an HZO-based metal-ferroelectricmetal(MFM) capacitor with asymmetric electrodes, and the best FE endurance, as well as the most reliable RS behavior, is demonstrated by testing several electrodes materials. High memory windows are achieved in both FE and RS modes. Through this design, excellent accuracy is maintained over time, as verified by network simulation.
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