检索结果-南通市图书馆

Mechanically Strong Janus Poly(N-isopropylacrylamide)/Graphene Oxide Hydrogels as Thermo-responsive Soft Robots

在线全文

学校读者我要写书评

暂无评论

Chinese Journal of Polymer Science 2017年第10期35卷 1268-1275页

作者： xin peng tian-qi liu cong shang chen jiao 汪辉亮 Beijing Key Laboratory of Energy Conversion and Storage Materials College of Chemistry Beijing Normal University Beijing 100875 China

Simple preparation of stimuli-responsive hydrogels with good mechanical properties and mild stimuliresponsiveness is essential for their applications as smart soft robots. Mechanically strong Janus poly（Nisopropylacrylamide）/graphene oxide（PNIPAM/GO） nanocomposite hydrogels with stimuli-responsive bending behaviors are prepared through a simple one-step method by using molds made of a Teflon plate and a glass plate. Residual oxygen in the air bubbles on the Teflon plate surface affects the polymerization and hence the cross-linking density, leading to the different swelling/deswelling rates of the two sides of the gels. Therefore, the hydrogels exhibit bending/unbending behaviors upon heating/cooling in water. The incorporation of GO nanosheets dramatically enhances the mechanical properties of Janus hydrogels. Meanwhile, the photo-responsive property of the GO nanosheets also imparts the hydrogels with remotecontrollable deformation under IR irradiation. The application of the Janus PNIPAM/GO hydrogels as thermo-responsive grippers is demonstrated.

关键词： evaporation tough evident biomedical excess tensile hydrogel breaking ionic antimicrobial

Verification of SEU resistance in 65 nm high-performance SRAM with dual DICE interleaving and EDAC mitigation strategies

在线全文

学校读者我要写书评

暂无评论

Nuclear Science and Techniques 2021年第12期32卷 64-76页

作者： Ze He Shi-Wei Zhao tian-qi liu Chang Cai Xiao-Yu Yan Shuai Gao Yu-Zhu liu Jie liu Institute of Modern Physics Chinese Academy of SciencesLanzhou 730000China Department of Computer Science and Technology Tsinghua UniversityBeijing 100084China School of Nuclear Science and Technology University of Chinese Academy of SciencesBeijing 100049China

A dual double interlocked storage cell(DICE)interleaving layout static random-access memory(SRAM)is designed and manufactured based on 65 nm bulk complementary metal oxide semiconductor *** single event upset(SEU)cross sections of this memory are obtained via heavy ion irradiation with a linear energy transfer(LET)value ranging from 1.7 to 83.4 MeV/(mg/cm^(2)).Experimental results show that the upset threshold(LETth)of a 4 KB block is approximately 6 MeV/(mg/cm^(2)),which is much better than that of a standard unhardened SRAM with an identical technology node.A 1 KB block has a higher LETth of 25 MeV/(mg/cm^(2))owing to the use of the error detection and correction(EDAC)*** a Ta ion irradiation test with the highest LET value(83.4 MeV/(mg/cm^(2))),the benefit of the EDAC code is reduced significantly because the multi-bit upset proportion in the SEU is increased *** with normal incident ions,the memory exhibits a higher SEU sensitivity in the tilt angle irradiation ***,the SEU cross section indicates a significant dependence on the data *** comprehensively considering HSPICE simulation results and the sensitive area distributions of the DICE cell,it is shown that the data pattern dependence is primarily associated with the arrangement of sensitive transistor pairs in the ***,some suggestions are provided to further improve the radiation resistance of the *** implementing a particular design at the layout level,the SEU tolerance of the memory is improved significantly at a low area ***,the designed 65 nm SRAM is suitable for electronic systems operating in serious radiation environments.

关键词： Double interlocked storage cell(DICE) Error detection and correction(EDAC)code Heavy ion Radiation hardening technology Single event upset(SEU) Static random-access memory(SRAM)

Clinical stages of recurrent hepatocellular carcinoma: A retrospective cohort study

在线全文

学校读者我要写书评

暂无评论

World Journal of Clinical Cases 2021年第27期9卷 8020-8026页

作者： Si-Yang Yao Bin Liang Yuan-Yuan Chen Yun-tian Tang Xiao-Feng Dong tian-qi liu Department of Hepatobiliary-Pancreatic-Splenic Surgery The People’s Hospital of Guangxi Zhuang Autonomous RegionNanning 530021Guangxi Zhuang Autonomous RegionChina

BACKGROUND Hepatocellular carcinoma(HCC)is the second leading cause of cancer-related death worldwide,and has relatively high recurrence *** studies have been published on the clinical stages of recurrent *** To assess the applicability of the Barcelona Clinic Liver Cancer(BCLC)staging for recurrent HCC and the need to establish clinical stage criteria for recurrent *** The clinicopathological data of 81 patients with recurrent HCC who were admitted to the Hospital of Guangxi Zhuang Autonomous Region from January 2013 to December 2017 were *** patients were divided into three groups according to the BCLC staging system as follows:(1)Group A with BCLC stage A,51 patients;(2)Group B with BCLC stage B,14 patients;and(3)Group C with BCLC stage C,16 *** median time to tumor recurrence and the median overall survival were *** The median time to tumor recurrence in groups A,B,and C was 16±1.5 mo,10±2.8 mo,and 6±0.5 mo,respectively,with a statistically significant difference among them(χ^(2)=70.144,P0.05),although there were statistically significant differences between group A and group C and between group B and group C(χ^(2)=62.110,and 19.972,P<0.05).The median overall survival in groups A,B,and C were 42±5.1 mo,22±3.1 mo,and 13±1.8 mo,respectively,with a statistically significant difference among them(χ2=38.949,P<0.05);there were statistically significant differences between group A and group B,group A and group C,and group B and group C(χ2=9.577,37.172,and 7.183,respectively;P<0.05).CONCLUSION There are different prognoses in recurrent HCC patients according to the BCLC ***,BCLC staging is applicable to recurrent HCC and it is essential to formulate clinical stage criteria for recurrent HCC.

关键词： Clinical stages Recurrent hepatocellular carcinoma Barcelona Clinic Liver Cancer staging system

Experimental study on heavy ion single-event effects in flash-based FPGAs

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Nuclear Science and Techniques 2016年第1期27卷 98-105页

作者： Zhen-Lei Yang Xiao-Hui Wang Hong Su Jie liu tian-qi liu Kai Xi Bin Wang Song Gu qian-Shun She Institute of Modern Physics Chinese Academy of SciencesLanzhou 730000China University of Chinese Academy of Sciences Beijing 100049China

With extensive use of flash-based field-programmable gate arrays(FPGAs) in military and aerospace applications, single-event effects(SEEs) of FPGAs induced by radiations have been a major concern. In this paper, we present SEE experimental study of a flash-based FPGA from Microsemi Pro ASIC3 product family. The relation between the cross section and different linear energy transfer(LET) values for the logic tiles and embedded RAM blocks is obtained. The results show that the sequential logic cross section depends not too much on operating frequency of the device. And the relationship between 0 →1 upsets(zeros) and 1 →0 upsets(ones) is different for different kinds of D-flip-flops. The devices are not sensitive to SEL up to a LET of 99.0 Me V cm2/***-beam tests show that the programming module is damaged due to the high-LET ions.

关键词： Flash 单粒子效应 FPGA 重离子实验现场可编程门阵列设备选择航天应用

Differences in MBUs induced by high-energy and medium-energy heavy ions in 28 nm FPGAs

在线全文

学校读者我要写书评

暂无评论

Nuclear Science and Techniques 2022年第9期33卷 28-36页

作者： Shuai Gao Jin-Hu Yang Bing Ye Chang Cai Ze He Jie liu tian-qi liu Xiao-Yu Yan You-Mei Sun Guo-qing Xiao Institute of Modern Physics Chinese Academy of SciencesLanzhou 730000China University of Chinese Academy of Sciences Beijing 100049China State Key Laboratory of ASIC and System Fudan UniversityShanghai 201203China State Key Laboratory of Analog and Mixed-Signal VLSI University of MacaoMacao 999078China

Multiple-bit upsets(MBUs)have become a threat to modern advanced field-programmable gate arrays(FPGAs)applications in radiation ***,many investigations have been conducted using mediumenergy heavy ions to study the effects of MBU ***,high-energy heavy ions(HEHIs)greatly affect the size and percentage of MBUs because their ionizationtrack structures differ from those of medium-energy heavy *** this study,the different impacts of high-energy and medium-energy heavy ions on MBUs in 28 nm FPGAs as well as their mechanisms are thoroughly *** the Geant4 calculation,more serious energy effects of HEHIs on MBU scales were successfully *** addition,we identified worse MBU responses resulting from lowered *** MBU orientation effect was observed in the radiation of different *** broadened ionization tracks for tilted tests in different dimensions could result in different MBU *** results also revealed that the ionization tracks of tilted HEHIs have more severe impacts on the MBU scales than mediumenergy heavy ions with much higher linear energy ***,comprehensive radiation with HEHIs is indispensable for effective hardened designs to apply highdensity 28 nm FPGAs in deep space exploration.

关键词： FPGA High-energy heavy-ion radiation MBU Ionization track

Prediction of proton-induced SEE error rates for the VATA160 ASIC

在线全文

学校读者我要写书评

暂无评论

Nuclear Science and Techniques 2017年第1期28卷 88-93页

作者： Kai Xi Di Jiang Shan-Shan Gao Jie Kong Hong-Yun Zhao Hai-Bo Yang tian-qi liu Bin Wang Bing Ye Jie liu Institute of Modern Physics Chinese Academy of SciencesLanzhou 730000 China University of Chinese Academy of Sciences Beijing 100049China State Key Laboratory of Particle Detection and Electronics University of Science and Technology of ChinaHefei 230026 China

We predict proton single event effect(SEE)error rates for the VATA160 ASIC chip on the Dark Matter Particle Explorer(DAMPE) to evaluate its radiation *** proton test facilities,we built a Monte Carlo simulation tool named PRESTAGE to calculate the proton SEE *** is based on the particle transport toolkit *** adopts a location-dependent strategy to derive the SEE sensitivity of the device from heavy-ion test data,which have been measured at the HI-13 tandem accelerator of the China Institute of Atomic Energy and the heavy-ion research facility in *** AP-8,SOLPRO,and August 1972 worst-case models are used to predict the average and peak proton fluxes on the DAMPE *** results show that the averaged proton SEE error rate for the VATA160 chip is approximately 2.17×10^(-5)/device/***-case error rates for the Van Allen belts and solar energetic particle events are 1-3 orders of magnitude higher than the averaged error rate.

关键词： Proton ASIC Single event effects Error rates

Strategy to mitigate single event upset in 14-nm CMOS bulk FinFET technology

在线全文

学校读者我要写书评

暂无评论

Chinese Physics B 2022年第5期31卷 527-534页

作者： Dong-qing Li tian-qi liu Pei-Xiong Zhao Zhen-Yu Wu Tie-Shan Wang Jie liu Institute of Modern Physics Chinese Academy of SciencesLanzhou 730000China University of Chinese Academy of Sciences Beijing 100049China School of Physical Science and Technology Lanzhou UniversityLanzhou 730000China National University of Defense Technology Changsha 410000China Tsinghua University Beijing 100084China

Three-dimensional(3 D)TCAD simulations demonstrate that reducing the distance between the well boundary and N-channel metal-oxide semiconductor(NMOS)transistor or P-channel metal-oxide semiconductor(PMOS)transistor can mitigate the cross section of single event upset(SEU)in 14-nm complementary metal-oxide semiconductor(CMOS)bulk Fin FET *** competition of charge collection between well boundary and sensitive nodes,the enhanced restoring currents and the change of bipolar effect are responsible for the decrease of SEU cross *** dualinterlock cell(DICE)design,this approach is more effective under heavy ion irradiation of higher LET,in the presence of enough taps to ensure the rapid recovery of well ***,the feasibility of this method and its effectiveness with feature size scaling down are discussed.

关键词： TCAD simulation FinFET single event upset(SEU)mitigation

Fabrication of h-Mn0_(2)@PDA composite nanocarriers for enhancement of anticancer cell performance by photo-chemical synergetic therapies

在线全文

学校读者我要写书评

暂无评论

Frontiers of Materials Science 2021年第2期15卷 291-298页

作者： Xue-ya ZHANG Guo-hua JIANG Gao SONG tian-qi liu Yan-fang SUN Zhi-yong ZENC School of Materials Science and Engineering Zhejiang Sci-Tech UniversityHangzhou 310018China College of Life Sciences and Medicine Zhejiang Sci-Tech UniversityHangzhou 310018China

The development of functional nanocarriers with multifunctional ability and expected degradability is of great significance for efficient drug delivery on tumor *** release of non-specific drugs and serious side effects severely limit their therapeutic effectiveness,although chemotherapy has been far and widely used in clinical practice[1-4].In the past few decades,nanosized drug carriers integrated with multi-responsive properties have emerged as promising candidates for anticancer treatment due to their long circulation in the bloodstream,high drug loading capacity,and“passive”targeting capability on account of the enhanced permeability and retention(EPR)effect[5-8].

关键词： drugs chemotherapy retention

Heavy-ion and pulsed-laser single event effects in 130-nm CMOS-based thin/thick gate oxide anti-fuse PROMs

在线全文

学校读者我要写书评

暂无评论

Nuclear Science and Techniques 2019年第5期30卷 92-102页

作者： Chang Cai tian-qi liu Xiao-Yuan Li Jie liu Zhan-Gang Zhang Chao Geng Pei-Xiong Zhao Dong-qing Li Bing Ye qing-Gang Ji Li-Hua Mo Institute of Modern Physics Chinese Academy of Sciences University of Chinese Academy of Sciences School of Physical Science and Technology Lanzhou University Academy of Shenzhen State Microelectronic Co. Ltd. Science and Technology on Reliability Physics and Application of Electronic Component Laboratory

Single event effects of 1-T structure programmable read-only memory(PROM) devices fabricated with a 130-nm complementary metal oxide semiconductorbased thin/thick gate oxide anti-fuse process were investigated using heavy ions and a picosecond pulsed laser. The cross sections of a single event upset(SEU) for radiationhardened PROMs were measured using a linear energy transfer(LET) ranging from 9.2 to 95.6 MeV cm^2mg^(-1).The result indicated that the LET threshold for a dynamic bit upset was ～ 9 MeV cm^2mg^(-1), which was lower than the threshold of ～ 20 MeV cm^2mg^(-1) for an address counter upset owing to the additional triple modular redundancy structure present in the latch. In addition, a slight hard error was observed in the anti-fuse structure when employing209 Bi ions with extremely high LET values(～ 91.6 MeV cm^2mg^(-1)) and large ion fluence(～ 1×10~8 ions cm^(-2)). To identify the detailed sensitive position of a SEU in PROMs, a pulsed laser with a 5-μm beam spot was used to scan the entire surface of the *** revealed that the upset occurred in the peripheral circuits of the internal power source and I/O pairs rather than in the internal latches and buffers. This was subsequently confirmed by a ^(181)Ta experiment. Based on the experimental data and a rectangular parallelepiped model of the sensitive volume, the space error rates for the used PROMs were calculated using the CRèME-96 prediction tool. The results showed that this type of PROM was suitable for specific space applications, even in the geosynchronous orbit.

关键词： Anti-fuse PROM Single event effects Heavy ions Pulsed laser Space error rate