Experimental study on heavy ion single-event effects in flash-based FPGAs

作     者：Zhen-Lei Yang Xiao-Hui Wang Hong Su Jie Liu Tian-Qi Liu Kai Xi Bin Wang Song Gu Qian-Shun She 

作者机构：Institute of Modern PhysicsChinese Academy of SciencesLanzhou 730000China University of Chinese Academy of SciencesBeijing 100049China 

出 版 物：《Nuclear Science and Techniques》 (核技术（英文）)

年 卷 期：2016年第27卷第1期

页      面：98-105页

核心收录：

学科分类：080902[工学-电路与系统] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0835[工学-软件工程] 081202[工学-计算机软件与理论] 0812[工学-计算机科学与技术（可授工学、理学学位）] 

基　　金：the National Natural Science Foundation of China(Nos.11079045 11179003 and 11305233) 

主　　题：Flash 单粒子效应 FPGA 重离子 实验 现场可编程门阵列 设备选择 航天应用 

摘      要：With extensive use of flash-based field-programmable gate arrays(FPGAs) in military and aerospace applications, single-event effects(SEEs) of FPGAs induced by radiations have been a major concern. In this paper, we present SEE experimental study of a flash-based FPGA from Microsemi Pro ASIC3 product family. The relation between the cross section and different linear energy transfer(LET) values for the logic tiles and embedded RAM blocks is obtained. The results show that the sequential logic cross section depends not too much on operating frequency of the device. And the relationship between 0 →1 upsets(zeros) and 1 →0 upsets(ones) is different for different kinds of D-flip-flops. The devices are not sensitive to SEL up to a LET of 99.0 Me V cm2/***-beam tests show that the programming module is damaged due to the high-LET ions.