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Electrical resistivity evolution in electrodeposited Ru and Ru-Co nanowires

Journal of Materials Science & Technology 2022年第10期105卷 17-25页

作者： Jun Hwan Moon Seunghyun kim taesoon kim Yoo Sang Jeon Yanghee kim Jae-Pyoung Ahn Young Keun kim Department of Materials Science and Engineering Korea UniversitySeoul 02841Republic of Korea Institute of Engineering Reserch Korea UniversitySeoul 02481Republic of Korea Advanced Analysis Center Korea Institute of Science and TechnologySeoul 02792Republic of Korea Research Resources Division Korea Institute of Science and TechnologySeoul 02792Republic of Korea

Nanoscale ruthenium(Ru)-based materials are promising replacements for existing multilayered Cu interconnects in integrated ***,it is not easy to apply the results of previously reported studies directly to the electrochemical damascene process because the previous studies have mainly focused on thin flms by dry ***,we report the electrical resistivity and microstructure of electrodeposited Ru *** estimate that the resistivity value of a 10 nm diameter Ru nanowire to be71.6μΩcm after analyzing the resistivity values of individual nanowires with various ***,we investigate the electrical properties of Ru_(x)Co_(1-x)nanowires where x is 0.04–0.99 at.%as possible replacements of the current Ta N barrier *** the entire composition range,the resistivity values of alloys are much lower than that of the conventional Ta ***,Ru and Ru-alloy nanowires surrounded by dielectric silica are thermally stable after 450°C heat ***,the nanoscale Ru and Ru-Co alloys possessing low resistivity values can be candidates for the interconnect and barrier materials,respectively.

关键词： Ruthenium(Ru) Ruthenium-cobalt(Ru-Co) Nanowire Electrical resistivity Microstructure Electrodeposition

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电沉积Mo和Mo-Co合金纳米线用于互联电阻的电阻率改性

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Engineering 2024年第1期32卷 127-137页

作者： Jun Hwan Moon taesoon kim Youngmin Lee Seunghyun kim Yanghee kim Jae-Pyoung Ahn Jungwoo Choi Hyuck Mo Lee Young Keun kim Department of Materials Science and Engineering Korea UniversitySeoul 02841Republic of Korea Department of Materials Science and Engineering Korea Advanced Institute of Science and EngineeringDaejeon 34141Republic of Korea Advanced Analysis Center Korea Institute of Science and TechnologySeoul 02792Republic of Korea Research Resources Division Korea Institute of Science and TechnologySeoul 02792Republic of Korea

Achieving historically anticipated improvement in the performance of integrated circuits is challenging,due to the increasing cost and complexity of the required technologies with each new *** overcome this limitation,the exploration and development of novel interconnect materials and processes are highly desirable in the microelectronics ***(Mo)is attracting attention as an advanced interconnect material due to its small resistivity size effect and high cohesive energy;however,effective processing methods for such materials have not been widely ***,we investigate the electrochemical behavior of ions in the confined nanopores that affect the electrical properties and microstructures of nanoscale Mo and Mo-Co alloys prepared via template-assisted *** in an electrolyte allow the deposition of extremely pure metal materials,due to their interac-tion with metal ions and *** this study,boric acid and tetrabutylammonium bisulfate(TBA)were added to an acetate bath to inhibit the hydrogen evolution *** accelerated the reduction of Mo at the surface by inducing surface conduction on the *** Mo nanowires with a 130 nm diameter synthesized through high-aspect-ratio nanopore engineering exhibited a resistivity of(63.0±17.9)μΩ*** also evaluated the resistivities of Mo-Co alloy nanowires at various compo-sitions toward replacing irreducible conventional barrier/liner *** intermetallic compound formed at a Mo composition of 28.6 at%,the resistivity of the Mo-Co nanowire was(58.0±10.6)μΩcm,indicat-ing its superior electrical and adhesive properties in comparison with those of conventional barriers such as TaN and ***,density functional theory and non-equilibrium Green's function calcula-tions confirmed that the vertical resistance of the via structure constructed from Mo-based materials was 21%lower than that of a conventional Cu/Ta/TaN structure.

关键词： Molybdenum Molybdenum-cobalt Interconnect Microstructure Electrodeposition Density functional theory

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