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Selective and localized laser annealing effect for high- performance flexible multilayer MoS2 thin-film transistors

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Nano Research 2014年第8期7卷 1137-1145页

作者： Hyukjun Kwon Woong Choi Daeho Lee Yunsung Lee Junyeon Kwon Byungwook Yoo Costas P. Grigoropoulos sunkook kim Department of Mechanical Engineering University of California Berkeley CA 94720-1740 USA School of Advanced Materials Engineering Kookmin University Seoul 136-702 South Korea Department of Mechanical Engineering 6achon University Seongnam-si Gyeonggi 461-701 South Korea Department of Electronics and Radio Engineering Kyung Hee University Gyeonggi 446-70 I South Korea Flexible Display Research Center Korea Electronics Technology Institute Seongnam Gyeonggi 463-816 South Korea

We report the use of ultra-short, pulsed-laser annealed Ti/Au contacts to enhance the performance of multilayer MoS2 field effect transistors (FETs) on flexible plastic substrates without thermal damage. An analysis of the temperature distribution, based on finite difference methods, enabled understanding of the compatibility of our picosecond laser annealing for flexible poly(ethylene naphthalate) (PEN) substrates with low thermal budget (< 200 °C). The reduced contact resistance after laser annealing provided a significant improvement in transistor performance including higher peak field-effect mobility (from 24.84 to 44.84 cm2·V−1·s−1), increased output resistance (0.42 MΩ at V gs − V th = 20 V, a three-fold increase), a six-fold increase in the self-gain, and decreased sub-threshold swing. Transmission electron microscopy analysis and current-voltage measurements suggested that the reduced contact resistance resulted from the decrease of Schottky barrier width at the MoS2-metal junction. These results demonstrate that selective contact laser annealing is an attractive technology for fabricating low-resistivity metal-semiconductor junctions, providing important implications for the application of high-performance two-dimensional semiconductor FETs in flexible electronics.

关键词：激光退火薄膜晶体管 MoS2 柔性性能退火效应透射电子显微镜分析场效应晶体管

Real-time electrical detection of epidermal skin MoS2 biosensor for point-of-care diagnostics

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Nano Research 2017年第3期10卷 767-775页

作者： Geonwook Yoo Heekyeong Park Minjung kim Won Geun Song Seokhwan Jeong Min Hyung kim Hyungbeen Lee Sang Woo Lee Young KiHong Min Goo Lee Sungho Lee sunkook kim School of Electronic Engineering Soongsil University Seou106978 Republic of Korea Multi-Functional Nano/Bio Electronics Lab. Kyung Hee University Gyeonggi 17104 Republic of Korea Department of Biomedical Engineering Yonsei University Wonju 26493 Republic of Korea Korea Electronics Technology Institute Gyeonggi 13488 Republic of Korea

Various approaches have been proposed for point-of-care diagnostics, and in particular, optical detection is preferred because it is relatively simple and fast. At the same time, field-effect transistor （FET）-based biosensors have attracted great attention because they can provide highly sensitive and label-free detection. In this work we present highly sensitive, epidermal skin-type point-of-care devices with system-level integration of flexible MOS2 FET biosensors, read-out circuits, and light-emitting diode （LEDs） that enable real-time detection of prostate cancer antigens （PSA）. Regardless of the physical forms or mechanical stress conditions, our proposed high-performance MoS2 biosensors can detect a PSA concentration of 1 ***-1 without specific surface treatment for anti-PSA immobilization on the MoS2 surface on which we characterize and confirm physisorption of anti-PSA using Kelvin probe force microscopy （KPFM） and tapping-mode atomic force microscopy （tm-AFM）. Furthermore, current modulation induced by the binding process was stably maintained for longer than 2-3 min. The results indicate that flexible MoS2-based FET biosensors have great potential for point-of-care diagnostics for prostate cancer as well as other biomarkers.

关键词： epidermal skin biomarker MoS2 biosensor real-time point-of-care diagnostics

A highly sensitive chemical gas detecting transistor based on highly crystalline CVD-grown MoSe2 films

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Nano Research 2017年第6期10卷 1861-1871页

作者： Jongyeol Baek Demin Yin Na Liu Inturu Omkaram Chulseung Jung Healin Im Seongin Hong Seung Min kim Young Ki Hong Jaehyun Hur Youngki Yoon sunkook kim Multi-Functional Nano/Bio Electronics Lab. Kyung Hee University Gyeonggi 446-701 Republic of Korea Department of Electrical and Computer Engineering & Waterloo Institute for Nanotechnology (WIN) University of Waterloo Waterloo ON N2L 3GI Canada Institute of Advanced Composite Materials Korea Institute of Science and Technology (KIST) Jeonbuk 565-905 Republic of Korea Department of Chemical and Biological Engineering Gachon University Seongnam-si Gyeonggi 13120 Republic of Korea

Layered semiconductors with atomic thicknesses are becoming increasingly important as active elements in high-performance electronic devices owing to their high carrier mobilities, large surface-to-volume ratios, and rapid electrical responses to their surrounding environments. Here, we report the first implementation of a highly sensitive chemical-vapor-deposition-grown multilayer MoSe2 field-effect transistor （FET） in a NO2 gas sensor. This sensor exhibited ultra-high sensitivity （S = ca. 1,907 for NO2 at 300 ppm）, real-time response, and rapid on-off switching. The high sensitivity of our MoSe2 gas sensor is attributed to changes in the gap states near the valence band induced by the NO2 gas absorbed in the MoSe2, which leads to a significant increase in hole current in the off-state regime. Device modeling and quantum transport simulations revealed that the variation of gap states with NO2 concentration is the key mechanism in a MoSe2 FET-based NO2 gas sensor. This comprehensive study, which addresses material growth, device fabrication, characterization, and device simulations, not only indicates the utility of MoSe2 FETs for high-performance chemical sensors, but also establishes a fundamental understanding of how surface chemistry influences carrier transport in layered semiconductor devices.

关键词： transition metaldichalcogenides MoSe2 chemical sensors chemical vapor depositon

Erratum to： A highly sensitive chemical gas detecting transistor based on highly crystalline CVD-grown MoSe2 films

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Nano Research 2017年第8期10卷 I0002-I0004,F0003页

作者： Jongyeol Baek Demin Yin Na Liu Inturu Omkaram Chulseung Jung Healin Im Seongin Hong Seung Min kim Young Ki Hong Jaehyun Hur Youngki Yoon sunkook kim School of Advanced Materials Science & Engineering Sungkyunkwan University Suwon 16419 Republic of Korea Department of Electrical and Computer Engineering & Waterloo Institute for Nanotechnology (WIN) University of Waterloo Waterloo ON N2L 3GI Canada Institute of Advanced Composite Materials Korea Institute of Science and Technology (KIST) Jeonbuk 565-905 Republic of Korea Department of Chemical and Biological Engineering Gachon University Seongnam-si Gyeonggi 13120 Republic of Korea

AIMS ＆ SCOPENano Research is a peer-reviewed, international and interdisciplinary journal that focuses on all aspects of nanoscience and nanotechnology. Submissions are solicited in all topical areas, ranging from ba...

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Erratum to： Real-time electrical detection of epidermal skin MoS2 biosensor for point-of-care diagnostics

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Nano Research 2017年第3期10卷 I0002-I0002页

作者： Geonwook Yoo Heekyeong Park Minjung kim Won Geun Song Seokhwan Jeong Min Hyung kim Hyungbeen Lee Sang Woo Lee Young Ki Hong Min Goo Lee Sungho Lee sunkook kim School of Electronic Engineering Soongsil University Seou106978 Republic of Korea School of Advanced Materials Science & Engineering Sungkyunkwan University Suwon 16419 Republic of Korea Department of Biomedical Engineering Yonsei University Wonju 26493 Republic of Korea Korea Electronics Technology Institute Gyeonggi 13488 Republic of Korea

The second affiliation of the authors in the original version of this article was unfortunately wrongly written on the first page, instead of Multi-Functional Nano/Bio Electronics Lab., Kyung Hee University, Gyeonggi ...

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