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A review on performance comparison of advanced MOSFET structures below 45 nm technology node

Journal of Semiconductors 2020年第6期41卷 19-28页

作者： Namrata Mendiratta suman lata tripathi School of Electronics and Electrical Engineering Lovely Professional UniversityPhagwaraPunjabIndia

CMOS technology is one of the most frequently used technologies in the semiconductor industry as it can be successfully integrated with *** two years the number of MOS transistors doubles because the size of the MOSFET is *** the size of the MOSFET reduces the size of the channel length which causes short channel effects and it increases the leakage *** reduce the short channel effects new designs and technologies are *** gate MOSFET design has shown improvement in performance as amplifiers over a single ***-based MOSFET design can be used in a harsh *** has been used in various applications such as in detecting *** increase in number of gates increases the current drive capability of *** MOSFET is an example of a quadruple gate around the four sides of channel that increases gate control over the channel *** also increases effective channel width that improves drain current and reduces leakage current keeping short channel effects under *** MOSFET operates faster and uses less power with increase in ON-state current leading to a good value of ION/IOFF *** this paper,several gate and channel engineered MOSFET structures are analyzed and compared for sub 45 nm technology node.A comparison among different MOSFET structures has been made for subthreshold performance parameters in terms of IOFF,subthreshold slope and DIBL *** analog/RF performance is analyzed for transconductance,effective transistor capacitances,stability factor and critical *** paper also covers different applications of advance MOSFET structures in analog/digital or IoT/biomedical applications.

关键词： MOSFET junctionless RF biosensor DIBL double gate

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Synthesis and Characterization of Liquid Crystal Elastomer

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Materials Sciences and Applications 2015年第6期6卷 527-532页

作者： Rita A. Gharde Santosh A. Mani suman Lal Samriti Khosla S. K. tripathi Department of Physics University of Mumbai Mumbai India K. J. Somaiya College of Engineering Vidyavihar (E) Mumbai India Department of Physics J.C.D.A.V College Dasuya Punjab India Department of Advanced Study Panjabi University Chandigarh India

The thermal and mechanical properties of Liquid Crystal Elastomers (LCEs) were characterized using various techniques for understanding of their physical behavior. The material used for investigation was synthesized by us, using Finklemann procedure, with proper cross linking density in nematic phase. The material is found to have unique coupling between anisotropicorder of liquid crystal component and elasticity of polymer network. The chemical structures were confirmed by Fourier Transform Infrared (FTIR) Spectroscopy and Scanning Electron Microscopy (SEM). Fabry Perot Scattering Studies (FPSS), Thermo gravimetric Analysis (TGA) and Differential Scanning Calorimatory (DSC) were used to study thermal properties. The mechanical properties were studied using force sensor. Our investigation shows that this synthesized Liquid Crystal Elastomer has ability of spontaneous change as a function of temperature and mechanical force, which shows it as a unique class of soft material.

关键词： Liquid Crystal Elastomers (LCEs) Fourier Transform Infrared (FTIR) Spectroscopy Scanning Electron Microscopy (SEM) Fabry Perot Scattering Studies (FPSS) Thermo gravimetric Analysis (TGA) Differential Scanning Calorimetry (DSC)

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