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Chinese Journal of Chemistry 2013年第3期31卷 321-328页

作者： Ting-shun zhu ming-Hua Xu Shanghai Institute of Materia Medica Chinese Academy of Sciences Shanghai 201203 China

Simple and readily available chiral N-（sulfinyl）allylamines have been developed as efficient novel ligands for the rhodium-catalyzed enantioselective 1,2-addition of arylboronic acids to challenging aliphatic a-ketoesters. By employing the linear or branched sulfinamide-olefin ligands, interesting enantioselectivity as well as regioselectiw ity reversal in the related asymmetric additions were observed.

关键词： asymmetric catalysis rhodium sulfur-o|efin ligand 1,2-addition stereoselectivity reversal

Effect of oxygen on regulation of properties of moderately boron-doped diamond films

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Chinese Physics B 2022年第12期31卷 591-597页

作者： Dong-Yang Liu Li-Cai Hao Wei-Kang Zhao Zi-Ang Chen Kun Tang shun-ming zhu Jian-Dong Ye Rong Zhang You-Dou Zheng Shu-Lin Gu School of Electronic Science and Engineering Nanjing UniversityNanjing 210093China The Shanghai Huahong Grace Semiconductor Manufacturing Corporation Shanghai 201203China Collaborative Innovation Center of Solid-State Lighting and Energy-Saving Electronics Nanjing UniversityNanjing 210093China

Regulation of oxygen on properties of moderately boron-doped diamond films is fully *** show that,with adding a small amount of oxygen(oxygen-to-carbon ratio<5.0%),the crystal quality of diamond is improved,and a suppression effect of residual nitrogen is *** increasing ratio of O/C from 2.5%to 20.0%,the hole concentration is firstly increased then *** change of hole concentration is also ***,the results of Hall effect measurement with temperatures from 300 K to 825 K show that,with adding a small amount of oxygen,boron and oxygen complex structures(especially B_(3)O and B_(4)O)are formed and exhibit as shallow donor in diamond,which results in increase of donor *** further increase of ratio of O/C,the inhibitory behaviors of oxygen on boron leads to decrease of acceptor concentration(the optical emission spectroscopy has shown that it is decreased with ratio of O/C more than 10.0%).This work demonstrates that oxygen-doping induced increasement of the crystalline and surface quality could be restored by the co-doping with *** technique could achieve boron-doped diamond films with both high quality and acceptable hole concentration,which is applicable to electronic level of usage.

关键词： moderately boron doped diamond crystal quality suppression effect boron and oxygen complex structures

Effects of oxygen/nitrogen co-incorporation on regulation of growth and properties of boron-doped diamond films

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Chinese Physics B 2023年第11期32卷 609-615页

作者：刘东阳汤琨朱顺明张荣郑有炓顾书林 School of Electronic Science and Engineering Nanjing UniversityNanjing 210093China The Shanghai Huahong Grace Semiconductor Manufacturing Corporation Shanghai 201203China Collaborative Innovation Center of Solid-State Lighting and Energy-Saving Electronics Nanjing UniversityNanjing 210093China

Regulation with nitrogen and oxygen co-doping on growth and properties of boron doped diamond films is studied by using laughing gas as dopant. As the concentration of laughing gas(N2O/C) increases from 0 to 10%, the growth rate of diamond film decreases gradually, and the nitrogen-vacancy(NV) center luminescence intensity increases first and then weakens. The results show that oxygen in laughing gas has a strong inhibitory effect on formation of NV centers, and the inhibitory effect would be stronger as the concentration of laughing gas increases. As a result, the film growth rate and nitrogen-related compensation donor decrease, beneficial to increase the acceptor concentration(~3.2×10^(19)cm^(-3)) in the film. Moreover, it is found that the optimal regulation with the quality and electrical properties of boron doped diamond films could be realized by adding appropriate laughing gas, especially the hole mobility(~700cm^(2)/V·s), which is beneficial to the realization of high-quality boron doped diamond films and high-level optoelectronic device applications in the future.

关键词： boron doped diamond nitrogen and oxygen co-doping crystal quality Hall effect measurement acceptor doping concentration

Diamond-based electron emission:Structure,properties and mechanisms

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Chinese Physics B 2024年第9期33卷 165-177页

作者： Liang-Xue Gu Kai Yang Yan Teng Wei-Kang Zhao Geng-You Zhao Kang-Kang Fan Bo Feng Rong Zhang You-Dou Zheng Jian-Dong Ye shun-ming zhu Kun Tang Shu-Lin Gu School of Electronic Science and Engineering Nanjing UniversityNanjing 210046China

Diamond has an ultrawide bandgap with excellent physical properties,such as high critical electric field,excellent thermal conductivity,high carrier mobility,*** with a hydrogen-terminated(H-terminated)surface has a negative electron affinity(NEA)and can easily produce surface electrons from valence or trapped electrons via optical absorption,thermal heating energy or carrier transport in a PN *** NEA of the H-terminated surface enables surface electrons to emit with high efficiency into the vacuum without encountering additional barriers and promotes further development and application of diamond-based emitting *** article reviews the electron emission properties of H-terminated diamond surfaces exhibiting NEA *** electron emission is induced by different physical *** advancements in electron-emitting devices based on diamond are also ***,the current challenges and future development opportunities are discussed to further develop the relevant applications of diamond-based electronemitting devices.

关键词： diamond negative electron affinity(NEA) PN junction electron emission

Recent progress of the native defects and p-type doping of zinc oxide

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Chinese Physics B 2017年第4期26卷 27-49页

作者：汤琨顾书林叶建东朱顺明张荣郑有炓 School of Electronic Science&Engineering Nanjing UniversityNanjing 210023China

Zinc oxide（ZnO） is a compound semiconductor with a direct band gap and high exciton binding *** unique property,i.e.,high efficient light emission at ultraviolet band,makes ZnO potentially applied to the short-wavelength light emitting ***,efficient p-type doping is extremely hard for *** to the wide band gap and low valence band energy,the self-compensation from donors and high ionization energy of acceptors are the two main problems hindering the enhancement of free hole *** defects in ZnO can be divided into donor-like and acceptorlike *** self-compensation has been found mainly to originate from zinc interstitial and oxygen vacancy related *** the acceptor-like defect,zinc vacancy,is thought to be linked to complex shallow acceptors in group-VA doped ***,the understanding of the behaviors of the native defects is critical to the realization of high-efficient p-type ***,some novel ideas have been extensively proposed,like double-acceptor co-doping,acceptor doping in iso-valent element alloyed ZnO,etc.,and have opened new directions for p-type *** of the approaches have been positively *** this article,we thus review the recent（2011-now） research progress of the native defects and p-type doping approaches *** hope to provide a comprehensive overview and describe a complete picture of the research status of the p-type doping in ZnO for the reference of the researchers in a similar area.

关键词： zinc oxide native defects p-type doping acceptor

Origin,characteristics,and suppression of residual nitrogen in MPCVD diamond growth reactor

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Chinese Physics B 2022年第12期31卷 606-611页

作者： Yan Teng Dong-Yang Liu Kun Tang Wei-Kang Zhao Zi-Ang Chen Ying-Meng Huang Jing-Jing Duan Yue Bian Jian-Dong Ye shun-ming zhu Rong Zhang You-Dou Zheng Shu-Lin Gu School of Electronic Science and Engineering Nanjing UniversityNanjing 210046China

Unintentional nitrogen incorporation has been observed in a set of microwave plasma chemical vapor deposition(MPCVD)-grown *** abnormality has been detected on the apparatus especially the base pressure and feeding gas *** a comprehensive investigation including the analysis of the plasma composition,we found that a minor leakage of the system could be significantly magnified by the thermal effect,resulting in a considerable residual nitrogen in the diamond ***,the doping mechanism of leaked air is different to pure nitrogen *** dosage of several ppm of pure nitrogen can lead to efficient nitrogen incorporation in diamond,while at least thousands ppm of leaked air is required for detecting obvious residual *** difference of the dosage has been ascribed to the suppression effect of oxygen that consumes *** the unintentional impurity is basically detrimental to the controllable fabrication of diamond for electronic application,we have provided an effective way to suppress the residual nitrogen in a slightly leaked system by modifying the susceptor *** study indicates that even if a normal base pressure can be reached,the nitrogen residing in the chamber can be“activated”by the thermal effect and thus be incorporated in diamond material grown by a MPCVD reactor.

关键词： microwave plasma chemical vapor deposition diamond residual nitrogen system leakage

Suppression and compensation effect of oxygen on the behavior of heavily boron-doped diamond films

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Chinese Physics B 2023年第3期32卷 554-560页

作者：郝礼才陈子昂刘东阳赵伟康张鸣汤琨朱顺明叶建东张荣郑有炓顾书林 School of Integrated Circuits Anhui UniversityHefei 230039China School of Electronic Science and Engineering Nanjing UniversityNanjing 210093China Collaborative Innovation Center of Solid-State Lighting and Energy-Saving Electronics Nanjing UniversityNanjing 210093China

This work investigates the suppression and compensation effect of oxygen on the behaviors and characteristics of heavily boron-doped microwave plasma chemical vapor deposition(MPCVD)diamond *** suppression effect of oxygen on boron incorporation is observed by an improvement in crystal quality when oxygen is added during the diamond doping process.A relatively low hole concentration is expected and verified by Hall effect measurements due to the compensation effect of oxygen as a deep donor in diamond.A low acceptor concentration,high compensation donor concentration and relatively larger acceptor ionization energy are then induced by the incorporation of oxygen;however,a heavily boron-doped diamond film with high crystal quality can also be *** formation of an oxygen–boron complex structure instead of oxygen substitution,as indicated by the results of x-ray photoelectron spectroscopy,is suggested to be more responsible for the observed enhanced compensation effect due to its predicted low formation ***,density functional theory calculations show that the boron–oxygen complex structure is easily formed in diamond with a formation energy of-0.83 *** work provides a comprehensive understanding of oxygen compensation in heavily boron-doped diamond.

关键词： diamond boron–oxygen co-doping incorporation efficiency ionization energy compensation boron–oxygen complex

高新技术企业所得税优惠多多益善吗?——基于CGE模型的分析

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华东经济管理 2017年第6期31卷 93-103页

作者：卢君生张顺明朱艳阳湖北文理学院管理学院湖北襄阳441053 中国人民大学财政金融学院北京100872

对于我国各地竞相降低所得税负以吸引高新技术企业的做法,现有研究未能基于一般均衡角度分析其不利影响。文章通过在可计算一般均衡模型中引入以往研究所忽视的高新技术企业所得税率和风险报酬系数变量,利用"两税合并"前后的实际经济运... 详细信息

对于我国各地竞相降低所得税负以吸引高新技术企业的做法,现有研究未能基于一般均衡角度分析其不利影响。文章通过在可计算一般均衡模型中引入以往研究所忽视的高新技术企业所得税率和风险报酬系数变量,利用"两税合并"前后的实际经济运行数据,分析了最优所得税率及其变化与一般均衡影响。研究发现,基于社会福利最大化角度,高新技术企业最优所得税率分别为18.24%和17.93%,且随着其风险报酬系数的增加而下降,并与CES生产函数的要素替代弹性分别呈正相关和倒U型关系。进一步对比不同均衡发现,过多的所得税优惠所带来的投资增长,是以社会整体福利和高新技术企业就业、产出及效率的下降为代价,且这种代价在非高新企业统一税率情形更为显著。因此,规范各地高新技术企业所得税优惠政策,在当前我国经济瓶颈已从投资约束转向效率约束的背景下,尤显必要。

关键词：企业所得税最优税率可计算一般均衡高新技术企业

自主品牌汽车产业的财税激励政策研究:基于CGE模型的分析

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数学的实践与认识 2018年第14期48卷 109-119页

作者：卢君生张顺明朱艳阳湖北文理学院经济管理学院湖北襄阳441053 中国人民大学财政金融学院北京100872

现有关于发展自主品牌汽车产业的政策与研究结论相互掣肘，摇摆不定．通过在可计算一般均衡模型中引入以往研究所忽视的技术要素和财政补贴变量，利用中国2012年实际经济运行数据，分析了自主品牌汽车技术进步的影响和财税激励政策的作... 详细信息

现有关于发展自主品牌汽车产业的政策与研究结论相互掣肘，摇摆不定．通过在可计算一般均衡模型中引入以往研究所忽视的技术要素和财政补贴变量，利用中国2012年实际经济运行数据，分析了自主品牌汽车技术进步的影响和财税激励政策的作用差异．研究发现，基于社会福利最大化角度，最优财政补贴比例在5％左右，且随着自主品牌汽车技术的提升而下降．与购置税优惠政策以牺牲其它产业和劳动者利益为代价发展汽车产业不同，技术进步和财政补贴政策既能促进经济增长，又能缩小贫富差距．因此，对自主品牌汽车部门实施研发补贴，是一项兼顾长期技术进步与短期补贴效用的更为有利的政策选择．

关键词：自主品牌汽车财政补贴购置税可计算一般均衡模型

Alcalase水解大豆蛋白制备大豆蛋白寡肽的研究

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现代食品科技 2007年第11期23卷 51-53页

作者：班玉凤朱海峰孙明珠沈阳工业大学石油化工学院辽宁辽阳111003

研究了Alcalase水解大豆蛋白制备大豆蛋白寡肽时影响水解效果的各种因素,在此基础上通过正交试验确定了Alcalase水解大豆蛋白的水解条件:温度70℃,底物浓度60g/L,Alcalase酶与底物比为20μL/g,pH7.5,水解时间为4h。在此水解条件下,水解... 详细信息

研究了Alcalase水解大豆蛋白制备大豆蛋白寡肽时影响水解效果的各种因素,在此基础上通过正交试验确定了Alcalase水解大豆蛋白的水解条件:温度70℃,底物浓度60g/L,Alcalase酶与底物比为20μL/g,pH7.5,水解时间为4h。在此水解条件下,水解液水解度达到了24.1%。

关键词： Alcalase 大豆蛋白水解度