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Zno heteroepitaxy on Sapphire Using a Novel Buffer Layer of Titanium oxide: optoelectronic Behavior

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Crystal Structure Theory and Applications 2013年第2期2卷 100-105页

作者： satoshi Yamauchi Yoh Imai Department of Biomolecular Functional Engineering Ibaraki University Hitachi Japan Department of Electric and Electronic Engineering Ibaraki University Hitachi Japan

optoelectronic property of Zno epitaxial layer grown by plasma-assisted epitaxy at temperature as low as 340°C using Ti2o3 buffer layer on a-sapphire were studied by low temperature photoluminescence at 10 K comparing to the layers on c-sapphire and a-sapphire without the buffer layer. The near band-edge emission consisting of free-exciton emissions and neutral-donor bound exciton emissions was significantly dependent on the buffer thickness and dominated by the free-exciton emissions in the layer grown on the very thin buffer layer about 0.8 nm, whereas the intense emissions by neutral-donor bound excitons were observed in the Zno layer on c-sapphire. The structural behavior indicated the donor was originated from the three-dimensional growth of Zno layer and details of the optoelectronic feature suggested the residual donors were Al and interstitial-Zn.

关键词： Zno Ti2o3 Plasma-Assisted Epitaxy Photoluminescence Free-Exciton Bound-Exciton

Plasma-Assisted Chemical Vapor Deposition of Tio2Thin Films for highly hydrophilic Performance

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Crystal Structure Theory and Applications 2013年第1期2卷 1-7页

Titanium-oxide layer was grown on glass substrate by plasma-assisted chemical vapor deposition (PCVD) using oxygen gas plasma excited by radio-frequency power at 13.56 Mhz in the pressure as low as 3mtorr at relatively low temperature below 400oC, and studied on the crystallographic properties with the hydrophilic behavior comparing to the layer deposited by low-pressure chemical vapor deposition (LPCVD). Raman spectra indicated anatase-phase Tio2 layer without amorphous-phase could be formed above 340oC by simultaneous supply of plasma-cracked and non-cracked titanium-tetra-iso-propoxide (TTIP) used as preliminary precursor. Surface Scanning Electron Microscope images indicated the PCVD-layer consists of distinct nanometer-size plate-like columnar grains, in contrast to rugged micrometer-size grains in the LPCVD-layer. Extremely small water contact angle about 5o in dark and the quick conversion to super-hydrophilicity by UV-irradiation with a light-power density as low as 50 W/cm2 were observed on the PCVD- layer grown at 380oC, while the large initial contact angle was above 40o and the response for the UV-irradiation was gradual on the LPCVD-layer.

关键词： PCVD Titanium-oxide Films Anatase-Tio2 hydrophilicity

Plasma-Assisted Chemical Vapor Deposition of Titanium oxide Layer at Room-Temperature

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Journal of Crystallization Process and Technology 2014年第1期4卷 20-26页

作者： satoshi Yamauchi hiromi Suzuki Risa Akutsu Department of Biomolecular Functional Engineering Ibaraki University Hitachi Japan.

Plasma-assisted chemical vapor deposition (PCVD) at pressure as low as 3 mtorr using titanium-tetra-isopropoxide (TTIP) and oxygen mixed gas plasma generated by 13.56 Mhz radio frequency power (RF-power) below 70 W were applied to deposit titanium-oxide layer at temperature under 40°C. Plasma optical emission spectroscopy and FTIR indicated that density of oh group in the amorphous layer was related to the density of oh or h2o in the plasma and the species was formed on electrode to induce the RF-power. hydrophilicity on the layer was dependent on the density of chemisorbed oh, but was degraded by the excess oh. The PCVD-Tiox coating was demonstrated on polyethylene terephthalate and showed good hydrophilic property with the contact angle of water about 5°.

关键词： PCVD Amorphous Titanium-oxide FTIR hydroxyl hydrophilicity

Low Pressure Chemical Vapor Deposition of Tio2Layer in hydrogen-Ambient

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Journal of Crystallization Process and Technology 2014年第4期4卷 185-192页

作者： satoshi Yamauchi Kazuhiro Ishibashi Sakura hatakeyama Department of Biomolecular Functional Engineering Ibaraki University Hitachi Japan

Low pressure chemical vapor deposition (LPCVD) of anatase Tio2?as a reduction gas was demonstrated at pres- sure of 3 mtorr in comparison to that using TTIP and o2 with study for the property of the layers. Dissociation energy of TTIP in h2 was higher than that in o2 but resistivity of the layer deposited in h2 was significantly decreased to 0.2 Ω cm in contrast to the high resistivity beyond 100 Ω cm of the layer deposited in o2. UV-Vis optical transmission spectra showed absorption around 2.2 eV was increased in the layer deposited by TTIP + h2 in addition to decrease of forbidden energy gap due to increase of Urbach tail. Resistivity at low temperature below 100 K indicating the layer deposited in h2-ambient was degenerated by the high electron density but the resistivity was decreased with temperature above 100 K with the activation energy about 100 meV. A possible electronic conduction model based on kernel, grain boundary and surface trap to clarify the temperature dependent resistivity suggesting resistivity of the layer was limited by depletion region in the grain-boundary extended from the surface and the kernel with significantly low resistivity in 10-3 Ω cm order was formed in the layer.

关键词： LPCVD TTIP+h2 Anatase-Tio2 Low Resistive Tio2

Low Resistive Tio2Deposition by LPCVD Using TTIP and NbF5in hydrogen-Ambient

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Journal of Crystallization Process and Technology 2015年第1期5卷 15-23页

作者： satoshi Yamauchi Kazuhiro Ishibashi Sakura hatakeyama Department of Biomolecular Functional Engineering Ibaraki University Hitachi Japan

Low resistive Tio2 layer was deposited by low pressure chemical vapor deposition (LPCVD) at pressure around 0.25 Pa using titanium-tetra-iso-propoxide (TTIP) and NbF5 in h2-ambient. Acti-vation energy for the deposition rate on the temperature was significantly decreased to 120 kJ/mol as compared with 228 kJ/mol for the deposition in h2 without NbF5. The deposition rate linearly increased with NbF5 supply rate but gradually decreased with h2 supply rate indicated that F on the deposition surface acts as catalyst for TTIP-dissociation but is non-activated by hydrogen. Resistivity of the layer was decreased by NbF5 supply depending on the deposition temperature with the activation energy of 319 kJ/mol, whereas the energy was 244 kJ/mol for the layer deposited in h2 without NbF5. The dependence of resistivity on NbF5. and h2 supply rates suggested that the doping should be performed by sufficient NbF5 and h2 supply rate to improve the crystallinity. As a result of the optimization, the resistivity was successfully reduced to 5 × 10-2 Ω·cm. optical transmission spectra in UV-Vis region indicated that significant absorption observed for the layer deposited in h2 was notably decreased by using NbF5. The improved optical property was better than that for the layer deposited in o2-ambient.

关键词： LPCVD-Tio2 h2-Ambient Nb and F Doping Low-Resistive Tio2 optical Transmittance

Distribution of Ag(I), Li(I)-Cs(I) Picrates, and Na(I) Tetraphenylborate with Differences in Phase Volume between Water and Diluents

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American Journal of Analytical Chemistry 2020年第1期11卷 25-46页

作者： satoshi Ikeda Saya Morioka Yoshihiro Kudo Graduate School of Science and Engineering Chiba University Chiba Japan

Ionic strength conditions in distribution experiments with single ions are very important for evaluating their distribution properties. Distribution experiments of picrates (MPic) with M = Ag(I) and Li(I)-Cs(I) into o-dichlorobenzene (oDCBz) were performed at 298 K by changing volume ratios (Vorg/V) between water and oDCBz phases, where “org” shows an organic phase. Simultaneously, an analytic equation with the Vorg/V variation was derived in order to analyze such distribution systems. Additionally, the AgPic distribution into nitrobenzene (NB), dichloromethane, and 1,2-dichloroethene (DCE) and the NaB(C6h5) 4 (=NaBPh4) one into NB and DCE were studied at 298 K under the conditions of various Vorg/V values. So, extraction constants (Kex) for MPic into the org phases, their ion-pair formation constants (KMA,org) for MA = MPic in the org ones, and standard distribution constants () for the M(I) transfers between the water and org bulk phases with M = Ag and Li-Cs were determined at the distribution equilibrium potential (dep) of zero V between the bulk phases and also the Kex (NaA), KNaA,org, and values were done at A-=BPh-4. here, the symbols Kex, KMA,org, and or were defined as [MA] org/[M+][A-], [MA] org/[M+]org [A-]org, and [M+]org/[M+] or [A-]org/[A-] at dep = 0, respectively. Especially, the ionic strength dependences of Kex and KMPic,org were examined at M = Li(I)-K(I) and org = oDCBz. From above, the conditional distribution constants, KD,BPh4 and KD,Cs, were classified by checking the experimental conditions of the I, Iorg, and dep values.

关键词： Standard Distribution Constants Volume Ratios Distribution Equilibrium Potentials Ionic Strength Dependence Extraction Constant Ion-Pair Formation Constant o-Dichlorobenzene

Diffusion of Metal and oxygen Ions in oxygen Deficient Material Based Resistance Switches

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Diffusion of Metal and Oxygen Ions in Oxygen Deficient Mater...

Enhanced piezoelectric properties of (Ba_(0.3)Bi_(0.7))(Mg_(0.05)Fe_(0.6)Ti_(0.35))o_(3) piezoelectric ceramics with high Curie temperature

第十三届全国量子化学会议

作者： Bo Xiao satoshi Watanabe School of Chemistry and Chemical Engineering Yantai University Department of Materials Engineering The University of Tokyo

oxygen-deficient metal oxide based resistance switches are under intensive investigations due to their potential application in memory cell.[1] All the switching mechanisms proposed so far are based on the diffusion of o ions or vacancies. In fact, several decades ago, Davies et al.[2] observed the diffusion of both metal and o species across metal sub-oxide layers during the growth of oxide films such as in Alo and Tao, though only o diffusion was observed in the cases of hfo and Zro. In this work, taking amorphous Tao(a-Tao) and hfo(a-hfo)as examples, we examine the diffusion behaviors of metal and o ions from first-principles. We confirm that the self-diffusion of o is predominant in both a-Tao and a-hfo based resistance switches, and both metal and o ions diffusions are enhanced with the decrease in o content. Interestingly, in the a-Tao with high o vacancy content(i.e., x =1.5 and 1), the diffusion of Ta becomes comparable to that of o in a wide range of temperature. In contrast, the diffusion of hf in the a-hfo(y = 1 and 0.75) is 2 order smaller than that of o. It is found that the diffusivity of both metal and o ions in a-Tao and a-hfo strongly depends on the free volume around themselves, which is related to the change in their coordination numbers and bond lengths. our results reveal that the diffusion of metal ions should be considered in explaining the switching mechanism of oxygen-deficient materials based resistance switches,especially in a-Taox.

关键词： Resistance Switch Switching Mechanism

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Journal of Advanced Dielectrics 2014年第1期4卷 81-86页

作者： Ichiro Fujii Ryuta Mitsui Kouichi Nakashima satoshi Wada Interdisciplinary Graduate School of Medical and Engineering University of Yamanashi Kofu 400-8510Japan

(Ba_(0.3)Bi_(0.7))(Mg_(0.05)Fe_(0.6)Ti_(0.35))o_(3) ceramics were either doped with vanadium or sintered in calcined powder with the same *** to an undoped ceramic sintered without the calcined powder,both ceramics showed reduced leakage current densities(lower than 1×10^(-7) A/cm^(2))and absence of dielectric relaxation behaviors observed in frequency-and temperaturedependent dielectric *** Curie temperatures of both samples were higher than 460℃.The maximum field-induced strain over the applied field,S_(max)/E_(max),of 366 pm/V of the undoped ceramic sintered without the calcined powder increased to 455 and 799 pm/V for the V-doped ceramics and the ceramics sintered with the calcined powder,*** increase was related to a reduced concentration of bismuth vacancy-oxygen vacancy defect dipoles.

关键词： Piezoelectrics domain structure lead-free high Curie temperature dopant.

origin of Candida albicans in human oral Cavity

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open Journal of Stomatology 2022年第4期12卷 137-145页

作者： Akira Fukatsu osamu Tsuzukibashi Mana Fuchigami Yoshinori ono satoshi Uchibori Yuji Takahashi Chiaki Komine Koji Umezawa Sachiyo hayashi Takashi Asano Taira Kobayashi Masanobu Wakami hiroshi Murakami Masahiko Fukumoto Department of Laboratory Medicine for Dentistry for the Compromised Patient Nihon University School of Dentistry at Matsudo Chiba Japan Department of Laboratory Medicine for Dentistry Nihon University Graduate School of Dentistry at Matsudo Chiba Japan Department of Fixed Prosthodontics Nihon University School of Dentistry at Matsudo Chiba Japan Department of Special Needs Dentistry Nihon University School of Dentistry at Matsudo Chiba Japan Department of oral Implantology Nihon University School of Dentistry at Matsudo Chiba Japan

Purpose: Candida albicans is regarded as a part of normal flora in the human oral cavity. however, it remains unclear whether the genus Candida, especially C. albicans, is an oral resident microorganism and causes marital infection or not. The purpose of the present study was to elucidate the origin of oral C. albicans by investigating the colonization and infection route to oral cavities of this organism with arbitrarily primed polymerase chain reaction (AP-PCR). Methods: After C. albicans was isolated from four subjects (average age: 42.2, range: 33 - 56), the isolations of this organism from them were performed six months later again. To investigate whether C. albicans is an oral resident microorganism, the genotype homology of each C. albicans isolates that were isolated twice from the same subjects was compared. Moreover, C. albicans was isolated from five pairs of married couples (average period of cohabitation: 12.4 years, range: 5 - 31). To investigate whether C. albicans causes marital infection, the genotype homology of C. albicans isolates that were isolated from each pair of married couples was compared. Results: AP-PCR patterns of C. albicans that were isolated from each subject at o month and after 6 months showed the identical genotypes among each individual. C. albicans isolates from five pairs of married couples showed the identical genotypes between a husband and wife of each pair on AP-PCR. Conclusion: These results indicated that C. albicans was an oral resident microorganism and caused the marital infection.

关键词： Candida albicans oral Cavity AP-PCR Genotyping