ZnO Heteroepitaxy on Sapphire Using a Novel Buffer Layer of Titanium Oxide: Optoelectronic Behavior

作     者：Satoshi Yamauchi Yoh Imai 

作者机构：Department of Biomolecular Functional Engineering Ibaraki University Hitachi Japan Department of Electric and Electronic Engineering Ibaraki University Hitachi Japan 

出 版 物：《Crystal Structure Theory and Applications》 (晶体结构理论与应用（英文）)

年 卷 期：2013年第2卷第2期

页      面：100-105页

学科分类：1002[医学-临床医学] 100214[医学-肿瘤学] 10[医学] 

主　　题：ZnO Ti2O3 Plasma-Assisted Epitaxy Photoluminescence Free-Exciton Bound-Exciton 

摘      要：Optoelectronic property of ZnO epitaxial layer grown by plasma-assisted epitaxy at temperature as low as 340°C using Ti2O3 buffer layer on a-sapphire were studied by low temperature photoluminescence at 10 K comparing to the layers on c-sapphire and a-sapphire without the buffer layer. The near band-edge emission consisting of free-exciton emissions and neutral-donor bound exciton emissions was significantly dependent on the buffer thickness and dominated by the free-exciton emissions in the layer grown on the very thin buffer layer about 0.8 nm, whereas the intense emissions by neutral-donor bound excitons were observed in the ZnO layer on c-sapphire. The structural behavior indicated the donor was originated from the three-dimensional growth of ZnO layer and details of the optoelectronic feature suggested the residual donors were Al and interstitial-Zn.