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Ta-Doped Sb2Te Allows Ultrafast Phase-Change Memory with Excellent High-Temperature Operation Characteristics

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Nano-Micro Letters 2021年第2期13卷 221-231页

作者： Yuan Xue Shuai Yan Shilong Lv sannian song Zhitang song State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050People’s Republic of China

Phase-change memory(PCM)has considerable promise for new applications based on von Neumann and emerging neuromorphic computing systems.However,a key challenge in harnessing the advantages of PCM devices is achieving high-speed operation of these devices at elevated temperatures,which is critical for the efficient processing and reliable storage of data at full capacity.Herein,we report a novel PCM device based on Ta-doped antimony telluride(Sb2Te),which exhibits both high-speed characteristics and excellent high-temperature characteristics,with an operation speed of 2 ns,endurance of >106 cycles,and reversible switching at 140℃.The high coordination number of Ta and the strong bonds between Ta and Sb/Te atoms contribute to the robustness of the amorphous structure,which improves the thermal stability.Furthermore,the small grains in the three-dimensional limit lead to an increased energy efficiency and a reduced risk of layer segregation,reducing the power consumption and improving the long-term endurance.Our findings for this new Ta-Sb2Te material system can facilitate the development of PCMs with improved performance and novel applications.

关键词： Phase-change memory High speed Ta High-temperature operation

Reliable Ge_(2)Sb_(2)Te_(5) based phase-change electronic synapses using carbon doping and programmed pulses

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Journal of Materiomics 2022年第2期8卷 382-391页

作者： Qiang Wang Gang Niu Ruobing Wang Ren Luo Zuo-Guang Ye Jinshun Bi Xi Li Zhitang song Wei Ren sannian song Electronic Materials Research Laboratory Key Laboratory of the Ministry of Education&International Center for Dielectric ResearchSchool of Electronic Science and EngineeringXi'an Jiaotong UniversityXi'an710049China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and InformationTechnologyChinese Academy of Sciences865 Changning RoadShanghai200050China Department of Chemistry and 4D LABS Simon Fraser UniversityBurnabyBritish ColumbiaV5A 1S6Canada Key Laboratory of Microelectronics Device and Integrated Technology The Institute of Microelectronics of Chinese Academy of SciencesBeijing100029China University of Chinese Academy of Sciences Beijing100049China

Hardware electronic synapse and neuro-inspired computing system based on phase change random access memory(PCRAM)have attracted an extensive investigation.However,due to the intrinsic asymmetric reversible phase transition,the defective weight update of PCRAM synapses in aspects of tuning range,linearity and continuity has long required a system-level complexity of circuits and al-gorithms.The cell-level improvements to a great extent may slim the system thus achieving efficient computing.We report in this work the great enhancement of Ge_(2)Sb_(2)Te_(5)(GST)based PCRAM synapses by combining materials engineering and pulse programming.It is found that carbon doping in GST retards the rate of phase changing thus increasing the controllability of the conductance,while non-linear programmable pulse excitations can eventually lead to a reliable synaptic potentiation and depression.A set of improved programmable pulse schemes for spike-timing dependent plasticity was then demonstrated,suggesting its potential superiority in flexible programming and reliable data collection.Our methods and results are of great significance for implementing PCRAM electronic synapses and high-performance neuro-inspired computing.

关键词： Programmable synapse Synaptic simulation PCRAM C-doped Ge_(2)Sb_(2)Te_(5) Electronic synapse

The etching process and mechanism analysis of Ta-Sb2Te3 film based on inductively coupled plasma

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半导体学报：英文版 2020年第12期41卷 12-16页

作者： Yongkang Xu sannian song Wencheng Fang Chengxing Li Zhitang song State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China University of Chinese Academy of Sciences Beijing 100049China

Compared to the conventional phase change materials,the new phase change material Ta-Sb2Te3 has the advantages of excellent data retention and good material stability.In this letter,the etching characteristics of Ta-Sb2Te3 were studied by using CF4/Ar.The results showed that when CF4/Ar=25/25,the etching power was 600 W and the etching pressure was 2.5 Pa,the etching speed was up to 61 nm/min.The etching pattern of Ta-Sb2Te3 film had a smooth side wall and good perpendicularity(close to 90°),smooth surface of the etching(RMS was 0.51nm),and the etching uniformity was fine.Furthermore,the mechanism of this etching process was analyzed by X-ray photoelectron spectroscopy(XPS).The main damage mechanism of ICP etching in CF4/Ar was studied by X-ray diffraction(XRD).

关键词： new phase change material inductively couple plasma etching process etching characteristics mechanism

From octahedral structure motif to sub-nanosecond phase transitions in phase change materials for data storage

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Science China(Information Sciences) 2018年第8期61卷 132-146页

作者： Zhitang song sannian song Min ZHU Liangcai WU Kun REN Wenxiong song songling FENG State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Micro-system and Information Technology Chinese Academy of Sciences

Phase change random access memory(PCRAM) has been successfully applied in the computer storage architecture, as storage class memory, to bridge the performance gap between DRAM and Flashbased solid-state drive due to its good scalability, 3 D-integration ability, fast operation speed and compatible with CMOS technology. Focusing on phase change materials and PCRAM for decades, we have successfully developed 128 Mb embedded PCRAM chips, which can meet the requirements of most embedded systems.3 D Xpoint(3 D PCRAM), invented by Intel and Micron, has been regarded as a new breakthrough in the last 25 years since the application of NAND in 1989, which represents state-of-the-art memory technology.This technology has some remarkable features, such as the confined device structure with 20 nm size, the metal crossbar electrodes to reduce the resistance variations in PCRAM arrays, and the ovonic threshold switching selector that can provide a high drive current and a low leakage current. A good understanding of phase change mechanism is of great help to design new phase change materials with fast operation speed,low power consumption and long-lifetime. In this paper, we firstly review the development of PCRAM and different understandings on phase change mechanisms in recent years, and then propose a new view on the mechanism, which is based on the octahedral structure motifs and vacancies. Octahedral structure motifs are generally found in both amorphous and crystalline phase change materials. They are considered to be the basic units during phase transition, which are severely defective in the amorphous phase. These configurations turn into more ordered ones after minor local rearrangements, the growth of which results in the crystallization of rocksalt(RS) phase with a large amount of vacancies in the cation sites. Further driven by thermodynamic driving force, these vacancies move and layer along certain directions; consequently, the metastable RS structure transforms into the stable hexagonal(HEX) structure. Based on

关键词： phase change memory phase change materials octahedral structure motif fast crystallization speed phase change mechanism

Phase-change memory based on matched Ge-Te,Sb-Te,and In-Te octahedrons:Improved electrical performances and robust thermal stability

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InfoMat 2021年第9期3卷 1008-1015页

作者： Ruobing Wang Zhitang song Wenxiong song Tianjiao Xin Shilong Lv sannian song Jun Liu State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Micro-System and Information TechnologyChinese Academy of SciencesShanghaiPeople's Republic of China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijingPeople's Republic of China Yangtze Advanced Memory Industry Innovation Center Co. Ltd.WuhanPeople's Republic of China

Phase-change memory(PCM)has been developed for three-dimensional(3D)data storage devices,posing huge challenges to the thermal stability and reliability of PCM.However,the low thermal stability of Ge2Sb2Te5(GST)limits further application.Here,we demonstrate PCM based on In0.9Ge2Sb2Te5(IGST)alloy,showing 180C 10-years data retention,6 ns set speed,one order of magnitude longer life time,and 75%reduced power consumption compared to GST-based device.The In can occupy the cationic positions and the In-Te octahedrons with good phase-change properties can geometrically match well with the host Ge-Te and Sb-Te octahedrons,acting as nucleation centers to boost the set speed and enhance the endurance of IGST device.Introducing stable matched phase-change octahedrons can be a feasible way to achieve practical PCMs.

关键词： improved performances matched octahedrons phase-change memory robust thermal stability

C掺杂Sb_(2)Te_(3)高速相变材料

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东华大学学报（自然科学版） 2023年第5期49卷 33-40页

作者：陈元浩吴良才黄晓江宋三年宋志棠东华大学理学院上海201620 中国科学院上海微系统与信息技术研究所集成电路材料全国重点实验室上海200050

Sb_(2)Te_(3)材料是一种具有快速相变特性的硫系化合物材料,但其热稳定性较差,高、低阻态之间的阻值差异小,不适宜制备相变存储器件。为解决Sb_(2)Te_(3)材料的高、低阻态的阻值差异小,热稳定性差的问题,提出对Sb_(2)Te_(3)材料进行碳(C... 详细信息

Sb_(2)Te_(3)材料是一种具有快速相变特性的硫系化合物材料,但其热稳定性较差,高、低阻态之间的阻值差异小,不适宜制备相变存储器件。为解决Sb_(2)Te_(3)材料的高、低阻态的阻值差异小,热稳定性差的问题,提出对Sb_(2)Te_(3)材料进行碳(C)掺杂改性。试验制备了基于C掺杂Sb_(2)Te_(3)材料(C-Sb_(2)Te_(3))的高速相变存储器件,并分析了氢(H)等离子体处理加热电极对相变存储器件性能的影响。基于C-Sb_(2)Te_(3)材料制备的相变存储器件的高、低阻态阻值比达两个数量级,器件的擦写循环次数达10^(5)次;分析氢(H)等离子体处理对器件性能的影响,加热电极经过H等离子体处理的相变存储器件高、低阻态的阻值稳定。研究表明:掺杂C使得Sb_(2)Te_(3)材料的结晶温度上升、晶粒细化;使用C掺杂Sb_(2)Te_(3)材料制备相变存储器件,并进行H等离子体处理,可得到一种具有热稳定性高、阻值稳定、能多次循环擦写的高速相变存储器件。

关键词：相变材料 C-Sb_(2)Te_(3) 高热稳定性高速相变表面处理

Dry etching of new phase-change material Al_(1.3)Sb_3Te in CF_4/Ar plasma

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Journal of Semiconductors 2012年第10期33卷 10-15页

作者：张徐饶峰刘波彭程周夕淋姚栋宁郭晓慧宋三年王良咏成岩吴良才宋志棠封松林 State Key Laboratory of Functional Materials for Informatics Laboratory of NanotechnologyShanghai Institute of Micro-System and Information TechnologyChinese Academy of Sciences Graduate University of the Chinese Academy of Sciences

The dry etching characteristic of AlSbTe film was investigated by using a CF/Ar gas mixture.The experimental control parameters were gas flow rate into the chamber,CF/Ar ratio,the Oaddition,the chamber background pressure,and the incident RF power applied to the lower electrode.The total flow rate was 50 sccm and the behavior of etch rate of AlSbTe thin films was investigated as a function of the CF/Ar ratio,the Oaddition,the chamber background pressure,and the incident RF power.Then the parameters were optimized.The fast etch rate was up to 70.8 nm/min and a smooth surface was achieved using optimized etching parameters of CFconcentration of 4%,power of 300 W and pressure of 80 mTorr.

关键词： Al1.3Sb3Te dry etching CF4/Ar gas mixture etch rate

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金沙江干热区芒果品种嫁接试验

亚热带农业研究 2010年第3期6卷 163-166页

作者：何璐沙毓沧王松标杨顺林段曰汤陈艺齐云南农业科学院热区生态农业研究所云南元谋651300 云南大学生命科学学院云南昆明650091 中国热带农业科学院南亚热带作物研究所广东湛江524091

引进芒果新品种19个,以3年芒为对照,开展金沙江干热区芒果品种嫁接试验。比较了不同品种嫁接成活率和嫁接后生长量的差异。综合评价后初步认为,热农1号和Keitt嫁接成活率、生长量较好,适宜在金沙江干热区推广。

关键词：金沙江干热区芒果品种嫁接试验

怒江流域6个杧果品种成熟果实挥发物成分分析

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热带农业科学 2021年第3期41卷 74-78页

作者：章勇张翠仙解德宏陈于福宋云连王跃全张惠云柏天琦尼章光云南省农业科学院热带亚热带经济作物研究所云南保山678000

采用顶空固相微萃取-气相色谱-质谱联用法(HS-SPME-GC-MS)研究了怒江流域6个杧果品种成熟果实挥发物成分,为云南省杧果品质评价、杧果病虫害的防治与抗性品种的筛选提供参考。结果表明:6个杧果品种主要挥发物成分有单萜、倍半萜类、酯... 详细信息

采用顶空固相微萃取-气相色谱-质谱联用法(HS-SPME-GC-MS)研究了怒江流域6个杧果品种成熟果实挥发物成分,为云南省杧果品质评价、杧果病虫害的防治与抗性品种的筛选提供参考。结果表明:6个杧果品种主要挥发物成分有单萜、倍半萜类、酯类、硅氧烷类等物质,其中,萜烯类物质是杧果香气成分中较多的物质,主要为3-蒈烯、萜品油烯、蒎烯、柠檬烯及其同分异构体等物质,且不同杧果品种之间挥发物成分存在差异,金煌、三年杧等含有蒈烯,帕拉英达、三年杧中含有丙位辛内酯等酯类物质。

关键词：杧果挥发物萜烯