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Lumped parameter analytic modeling and behavioral simulation of a 3-DOF MEMS gyro-accelerometer

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Acta Mechanica Sinica 2015年第6期31卷 910-919页

作者： Payal Verma sandeep k.arya Ram Gopal MEMS & Micro-sensors Group CSIR – Central Electronics Engineering Research Institute Department of Electronics & Communication Engineering Guru Jambheshwar University of Science & Technology

A new analytical model of a 3-degree-of-freedom （3-DOF） gyro-accelerometer system consisting of a 1-DOF drive and 2-DOF sense modes is presented. The model constructs lumped differential equations associated with each DOFof the system by vector analysis. The coupled differential equations thus established are solved analytically for their responses in both the time and frequency domains. Considering these frequency response equations, novel device design concepts are derived by forcing the sense phase to zero, which leads to a certain relationship between the structural frequencies, thereby causing minimization of the damping effect on the performance of the system. Furthermore, the feasibility of the present gyro-accelerometer structure is studied using a unique discriminatory scheme for the detection of both gyro action and linear acceleration at their events. This scheme combines the formulated settled transient solution of the gyro-accelerometer with the processes of synchronous demodulation and filtration, which leads to the in-phase and quadrature components of the system＇s output signal. These two components can be utilized in the detection of angular motion and linear acceleration. The obtained analytical results are validated by simulation in a MATLAB/Simulink environment, and it is found that the results are in excellent agreement with each other.

关键词： Microelectromechanical systems (MEMS) ·Multimeasurement system. Gyro-accelerometer Gyro-accelerometer model - Transient model

Low power digitally controlled oscillator designs with a novel 3-transistor XNOR gate

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Journal of Semiconductors 2012年第3期33卷 52-59页

作者： Manoj kumar sandeep k.arya Sujata Pandey Department of Electronics&Communication Engineering Guru Jambheshwar University of Science&Technology Amity University

Digital controlled oscillators（DCOs） are the core of all digital phase locked loop（ADPLL） circuits. Here,DCO structures with reduced hardware and power consumption having full digital control have been proposed. Three different DCO architectures have been proposed based on ring based ***,four and five bit controlled DCO with NMOS,PMOS and NMOS PMOS transistor switching networks are presented.A three-transistor XNOR gate has been used as the inverter which is used as the delay *** has been controlled digitally with a switch network of NMOS and PMOS *** three bit DCO with one NMOS network shows frequency variations of 1.6141-1.8790 GHz with power consumption variations 251.9224-276.8591μW. The four bit DCO with one NMOS network shows frequency variation of 1.6229-1.8868 GHz with varying power consumption of 251.9225-278.0740μW.A six bit DCO with one NMOS switching network gave an output frequency of 1.7237-1.8962 GHz with power consumption of 251.928-278.998μ*** frequency and power consumption results for 4 6 bit DCO circuits with one PMOS and NMOS PMOS switching network have also been *** phase noise parameter with an offset frequency of 1 MHz has also been reported for the proposed *** with earlier reported circuits have been made and the present approach shows advantages over previous circuits.

关键词： digital control oscillator delay cell power consumption voltage controlled oscillators

Capacitance-voltage analysis of a high-k dielectric on silicon

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Journal of Semiconductors 2012年第2期33卷 10-13页

作者： Davinder Rathee sandeep k.arya Mukesh kumar Department of Electronics and Communication Engineering Guru Jambeshwer University of Science and TechnologyHisarIndia Department of Electronics Science Kurukshetra UniversityKurukshetraIndia

Device characteristics of TiO;gate dielectrics deposited by a sol-gel method and DC sputtering method on a P-type silicon wafer are ***-oxide-semiconductor capacitors with Al as the top electrode were fabricated to study the electrical properties of TiO;*** films were physically characterized by using X-ray diffraction,a capacitor voltage measurement,scanning electron microscopy,and by spectroscopy *** XRD and DST-TG indicate the presence of an anatase TiO;phase in the *** deposited at higher temperatures showed better *** dielectric constant calculated using the capacitance voltage measurement was found to be 18 and 73 for sputtering and sol-gel samples *** refractive indices of the films were found to be 2.16 for sputtering and 2.42 for sol-gel samples.

关键词： sol-gel method DC reactive sputtering C-V analysis flat band voltage

Magnesium oxide(MgO)nanoadsorbents in wastewater treatment:A comprehensive review

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Journal of Magnesium and Alloys 2024年第5期12卷 1709-1773页

作者： H.C.S.Perera V.Gurunanthanan Anoop Singh M.M.M.G.P.G.Mantilaka G.Das sandeep arya Department of Physics Khalifa UniversityAbu Dhabi12788United Arab Emirates Postgraduate Institute of Science University of PeradeniyaPeradeniyaSri Lanka Department of Humanities and Sciences Guru Nanak Institutions Technical CampusIbrahimpatnamHyderabad501506India Centre for Global Health Research Saveetha Medical College and HospitalsSaveetha Institute of Medical and Technical SciencesChennai602105Tamil NaduIndia Department of Physics University of JammuJammu and Kashmir180006India

Wastewater contamination by heavy metals and synthetic dyes presents a significant environmental challenge,necessitating effective and sustainable separation *** review article provides a detailed examination of magnesium oxide(MgO)nanoparticles as an innovative nanoadsorbent for wastewater treatment,with a specific focus on heavy metal and dye *** review comprehensively explores various aspects of MgO nanoparticles,including their structural characteristics and synthesis *** article delves into the morphology and crystallographic arrangement of MgO nanoparticles,offering insights into their structural *** the complexity of adsorption processes,the review identifies and analyzes parameters influencing the adsorption efficiency of MgO nanoparticles,such as temperature,pH,contact time,initial concentration,and co-existing *** interplay between these parameters and the adsorption capability of MgO nanoparticles emphasizes the importance of optimizing operational ***,the review assesses various synthesis methods for MgO nanoparticles,including sol-gel,hydrothermal,precipitation,green synthesis,solvothermal,and template-assisted *** discusses the advantages,limitations,and resulting nanoparticle characteristics of each method,enabling readers to grasp the implications of synthesis processes on adsorption *** comprehensive review consolidates current insights into the effectiveness of MgO nanoparticles as a potent nanoadsorbent for removing heavy metals and dyes from wastewater covering a wide spectrum of aspects related to MgO ***,there is a need to investigate the use of MgO in the treatment of actual wastewater or river water,in order to leverage its cost-effectiveness and high efficiency for practical water treatment applications in real-time.

关键词： MgO nanoparticles Nanoadsorbent Wastewater treatment Heavy metals Dye separation Adsorption Synthesis methods

Review of current progress in hole-transporting materials for perovskite solar cells

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Journal of Energy Chemistry 2022年第5期31卷 330-386页

作者： Prerna Mahajan Bhavya Padha Sonali Verma Vinay Gupta Ram Datt Wing Chung Tsoi Soumitra Satapathi sandeep arya Department of Physics University of JammuJammuJammu and Kashmir 180006India Department of Physics Khalifa University of Science and TechnologyAbu Dhabi 127788United Arab Emirates SPECIFIC College of EngineeringSwansea University Bay CampusFabian WaySA18ENSwanseaUnited Kingdom Department of Physics Indian Institute of Technology RoorkeeUttarakhand 247667India

Recent advancements in perovskites’ application as a solar energy harvester have been astonishing. The power conversion efficiency(PCE) of perovskite solar cells(PSCs) is currently reaching parity(>25 percent), an accomplishment attained over past decades. PSCs are seen as perovskites sandwiched between an electron transporting material(ETM) and a hole transporting material(HTM). As a primary component of PSCs, HTM has been shown to have a considerable effect on solar energy harvesting, carrier extraction and transport, crystallization of perovskite, stability, and price. In PSCs, it is still necessary to use a *** perovskites are capable of conducting holes, they are present in trace amounts, necessitating the use of an HTM layer for efficient charge extraction. In this review, we provide an understanding of the significant forms of HTM accessible(inorganic, polymeric and small molecule-based HTMs), to motivate further research and development of such materials. The identification of additional criteria suggests a significant challenge to high stability and affordability in PSC.

关键词： Hole transporting material Perovskite solar cells Power conversion efficiency Stability

Down-conversion materials for organic solar cells:Progress,challenges,and perspectives

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Aggregate 2022年第3期3卷 59-79页

作者： Ram Datt Swati Bishnoi Harrison ka Hin Lee sandeep arya Sonal Gupta Vinay Gupta Wing Chung Tsoi Faculty of Science and Engineering Sustainable Product Engineering Centre for Innovative Functional Industrial CoatingsSwansea UniversityBay CampusFabian WaySwansea SA18ENUK Advanced Materials and Metrology Division Council of Scientific And Industrial Research-National Physical LaboratoryDr.K.S.Krishnan MargNew Delhi 110012India Department of Physics University of JammuJammuJammu and Kashmir 180006India Department of Conducting Polymers Institute of Macromolecular ChemistryCzech Academy of SciencesPrague 616206Czech Republic Department of Physics Khalifa University of Science and TechnologyP.O.Box 127788Abu DhabiUnited Arab Emirates

Organic solar cells(OSCs)in terms of power conversion efficiency(PCE)and operational lifetime have made remarkable progress during the last decade by improving the active layer materials and introducing new *** newly developed wide bandgap organic donor and low bandgap acceptor molecules covered the absorption from the visible to the near-infrared *** the incident high energy region(UV)is not in favor of *** absorption causes thermalization losses and photoinduced degradation,which hinders the PCE and lifetime of ***,lanthanide and non-lanthanide-based down-conversion(DC)materials have been introduced,which can effectively convert the high-energy photons(UV)to low-energy photons(visible)and resolve the spectral mismatch losses that limit the absorption of OSCs in high energy incident ***,the DC materials also protect the OSCs from UV-induced *** DC materials were also proposed to cross the Shockley-Queisser efficiency limit of the solar *** this review,the need for DC materials and their processing method for OSCs have been thoroughly ***,the main emphasis has been given to developing lanthanides and non-lanthanides-based DC materials for OSCs,their applications,and their impact on photovoltaic device performance,stability,and future perspectives.

关键词： down-conversion down-shifting lanthanides organic solar cells photostability

Genetic Algorithm for the Design of Optimal IIR Digital Filters

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Journal of Signal and Information Processing 2012年第3期3卷 286-292页

作者： Ranjit Singh sandeep k. arya Department of Electronics and Communication Engineering GJUS&T Department of Electronics and Communication Engineering JMIT Radaur

This paper presents the design of Optimal Infinite-Impulse Response (IIR) digital filters using Genetic Algorithm (GA). IIR filter is essentially a digital filter with Recursive responses. Since the error surface of digital IIR filters is generally nonlinear and multimodal, global optimization techniques are required in order to avoid local minima. This paper presents heuristic way for the designing IIR filters. GA is a powerful global optimization algorithm introduced in combinatorial optimization problems. The paper finds the optimum Coefficients of IIR digital filter through GA. Design of Lowpass and High pass IIR digital filter is proposed to provide estimate of transition band. It is found that the calculated values are more optimal than fda tool available for the design of filter in MATLAB. The simulation result of the employed examples shows an improvement on transition band and mean-square-error (MSE). The position of pole-zero is also presented to describe stability and results are compared with Simulated Annealing (SA) method.

关键词： Digital Filter Infinite-Impulse Response (IIR) Genetic Algorithm (GA) Optimization

Preparation and Characterization of TiO<sub>2</sub>and SiO<sub>2</sub>Thin Films

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World Journal of Nano Science and Engineering 2011年第3期1卷 84-88页

作者： Davinder Rathee sandeep k. arya Mukesh kumar 不详

Although scaling will continue for couple of decades but device geometries reaches to atomic size and limitation of quantum mechanical physical boundaries. To address these problems there is need of innovation in material science & engineering, device structure, and new nano devices based on different principle of physics. So TiO2 thin films have been grown on well clean N-type silicon substrates via a sol–gel spin coating method. MOS capacitor were fabricated and characterized with SiO2 and TiO2 as dielectric material on N-type silicon wafer. The thickness was measured by stylus profiler and found to be 510 ? and 528 ? for SiO2 and TiO2 respectively. Some of the material parameters were found from the measured Capacitance -Voltage (C-V) curve obtained by SUPREM-III (Stanford University Process Engineering Model Version 0-83) for SiO2 and C-V keithly 590 analyzer for TiO2 thin films. The result shows that obtained TiO2 film present a dielectric constant of approximately 80. The refractive index was found to be 2.4 and optical constant was 5.43 obtained from Ellipsometry. Band gap 3.6 eV of TiO2 was calculated by spectrophotometer and Surface morphology was obtained using Scanning Electron Microscope (SEM-JEOL) micrograph. The aluminum (Al) metal was deposited by the thermal evaporation system on the back side of the sample for the ohmic contact. Analysis shows that TiO2 may be acceptable as a viable substitute for high k dielectric in order to prevent the tunneling current problems.

关键词： Thin Films Sol-Gel Capacitance-Voltage Curve TiO2 Flat Band Voltage

Voltage Controlled Ring Oscillator Design with Novel 3 Transistors XNOR/XOR Gates

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Circuits and Systems 2011年第3期2卷 190-195页

作者： Manoj kumar sandeep kumar arya Sujata Pandey 不详

In present work, improved designs for voltage controlled ring oscillators (VCO) using three transistors XNOR/XOR gates have been presented. Supply voltage has been varied from [1.8 - 1.2] V in proposed designs. In first method, the VCO design using three XNOR delay cells shows frequency variation of [1.900 - 0.964] GHz with [279.429 - 16.515] μW power consumption variation. VCO designed with five XNOR delay cells shows frequency variation of [1.152 - 0.575] GHz with varying power consumption of [465.715 - 27.526] μW. In the second method VCO having three XOR stages shows frequency variation [1.9176 - 1.029] GHz with power consumption variation from [296.393 - 19.051] μW. A five stage XOR based VCO design shows frequency variation [1.049 - 0.565] GHz with power consumption variation from [493.989 - 31.753] μW. Simulations have been performed by using SPICE based on TSMC 0.18μm CMOS technology. Power consumption and output frequency range of proposed VCOs have been compared with earlier reported circuits and proposed circuit’s shows improved performance.

关键词： CMOS Delay Cell Low Power VCO XOR and XNOR Gates