Capacitance-voltage analysis of a high-k dielectric on silicon

作     者：Davinder Rathee Sandeep K.Arya Mukesh Kumar 

作者机构：Department of Electronics and Communication EngineeringGuru Jambeshwer University of Science and TechnologyHisarIndia Department of Electronics ScienceKurukshetra UniversityKurukshetraIndia 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2012年第33卷第2期

页      面：10-13页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0703[理学-化学] 0702[理学-物理学] 

主　　题：sol-gel method DC reactive sputtering C-V analysis flat band voltage 

摘      要：Device characteristics of TiO;gate dielectrics deposited by a sol-gel method and DC sputtering method on a P-type silicon wafer are ***-oxide-semiconductor capacitors with Al as the top electrode were fabricated to study the electrical properties of TiO;*** films were physically characterized by using X-ray diffraction,a capacitor voltage measurement,scanning electron microscopy,and by spectroscopy *** XRD and DST-TG indicate the presence of an anatase TiO;phase in the *** deposited at higher temperatures showed better *** dielectric constant calculated using the capacitance voltage measurement was found to be 18 and 73 for sputtering and sol-gel samples *** refractive indices of the films were found to be 2.16 for sputtering and 2.42 for sol-gel samples.