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Phase-locked single-mode terahertz quantum cascade lasers array

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Journal of Semiconductors 2024年第6期45卷 87-91页

作者： Yunfei Xu Weijiang Li Yu Ma Quanyong Lu Jinchuan Zhang shenqiang zhai Ning Zhuo Junqi Liu Shuman Liu Fengmin Cheng Lijun Wang Fengqi Liu Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing Key Laboratory of Low Dimensional Semiconductor Materials and DevicesBeijing100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Division of Quantum Materials and Devices Beijing Academy of Quantum Information SciencesBeijing 100193China

We demonstrated a scheme of phase-locked terahertz quantum cascade lasers(THz QCLs)array,with a single-mode pulse power of 108 mW at 13 *** device utilizes a Talbot cavity to achieve phase locking among five ridge lasers with first-order buried distributed feedback(DFB)grating,resulting in nearly five times amplification of the single-mode *** to the optimum length of Talbot cavity depends on wavelength,the combination of Talbot cavity with the DFB grating leads to better power amplification than the combination with multimode Fabry-Perot(F-P)*** Talbot cavity facet reflects light back to the ridge array direction and achieves self-imaging in the array,enabling phase-locked operation of *** set the spacing between adjacent elements to be 220μm,much larger than the free-space wavelength,ensuring the operation of the fundamental supermode throughout the laser's dynamic range and obtaining a high-brightness far-field *** scheme provides a new approach for enhancing the single-mode power of THz QCLs.

关键词： quantum cascade lasers phase locking terahertz single mode

MOCVD生长的中红外高功率量子级联激光器

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发光学报 2024年第5期45卷 794-799页

作者：杨鹏昌李曼孙永强程凤敏翟慎强刘峰奇张锦川中国科学院半导体研究所固态光电信息重点实验室北京100083 中国科学院大学材料科学与光电技术学院北京100049 电磁空间安全全国重点实验室天津300308

量子级联激光器(QCL)是中远红外波段的优质光源,具有体积小、重量轻、电光转化效率高等诸多优势,在传感、通信和国防等领域有重要的应用前景。金属有机物化学气相沉积(MOCVD)技术作为更高效的外延方式,应发展适用于QCL的MOCVD外延生长... 详细信息

量子级联激光器(QCL)是中远红外波段的优质光源,具有体积小、重量轻、电光转化效率高等诸多优势,在传感、通信和国防等领域有重要的应用前景。金属有机物化学气相沉积(MOCVD)技术作为更高效的外延方式,应发展适用于QCL的MOCVD外延生长技术以满足快速增长的市场需求。本文报道了全结构由MOCVD技术外延的QCL,通过将传统的“双声子共振”有源区结构修订为“单声子共振结合连续态抽取”结构,减少了电子的热逃逸,改善了器件的温度特性。针对该结构,进一步改变了有源区的掺杂浓度,并对比了不同掺杂浓度对器件性能的影响。腔长8 mm、平均脊宽约6.7μm的较高掺杂有源区器件在20℃下连续输出功率达3.43 W,中心波长约4.6μm,电光转化效率达13.1%;8 mm腔长的较低掺杂有源区器件在20℃下连续输出功率达2.73 W,中心波长约4.5μm,阈值电流仅0.56 A,峰值电光转化效率达15.6%。器件的输出功率和电光转化效率较之前文献报道的MOCVD制备的QCL有明显提高。该结果表明,MOCVD完全具备生长高功率QCL的能力,这对推动QCL的技术进步具有重要意义。

关键词：量子级联激光器中红外高功率金属有机物化学气相沉积

界面特性对InAs/GaSb Ⅱ型超晶格光学性质影响理论研究

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发光学报 2024年第5期45卷 817-823页

作者：马泽军李远朱申波程凤敏刘俊岐王利军翟慎强卓宁陈涌海张锦川刘舒曼刘峰奇中国科学院半导体研究所固态光电信息技术实验室北京100083 中国科学院大学材料科学与光电技术学院北京100049

InAs/GaSb Ⅱ型超晶格是中红外谱段光电子器件的核心结构,其Ⅱ型能带排列特点使电子、空穴在实空间分离而跨过界面,其非公共原子构型使得界面态丰富。我们在Burt-Foreman包络函数理论的基础上,讨论了不同界面态对超晶格电子能态和波函... 详细信息

InAs/GaSb Ⅱ型超晶格是中红外谱段光电子器件的核心结构,其Ⅱ型能带排列特点使电子、空穴在实空间分离而跨过界面,其非公共原子构型使得界面态丰富。我们在Burt-Foreman包络函数理论的基础上,讨论了不同界面态对超晶格电子能态和波函数的调控作用。理论计算表明,超晶格缓变界面和界面势两种不对称界面态分布,都会导致重空穴带的自旋劈裂,而只有施加界面势时才会使得轻空穴带发生自旋劈裂。此外,研究了改变阱宽和改变势垒时超晶格体系带隙的变化趋势。结果表明,随着势垒厚度增大,陡峭界面和缓变界面两种界面态下的带隙计算结果逐渐降低,并且随着厚度增加带隙趋于收敛,而界面势下的带隙计算结果随着势垒厚度的增大而增大,与前两者呈现相反的趋势,这为中红外超晶格器件的精确设计提供了可参考的理论基础。

关键词：锑化物超晶格界面态前后向差分法

Continuous-wave single-mode quantum cascade laser at 5.1 THz based on graded sampled grating design

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Photonics Research 2022年第12期10卷 2686-2692页

作者： WEIJIANG LI YU MA YUNFEI XU JUNQI LIU LIJUN WANG NING ZHUO QUANYONG LU JINCHUAN ZHANG shenqiang zhai SHUMAN LIU FENGQI LIU Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China College of Materials Science and Opto-Electronic Technology University of Chinese Academy of SciencesBeijing 101408China Division of Quantum Materials and Devices Beijing Academy of Quantum Information SciencesBeijing 100193China

We report on the terahertz(THz)quantum cascade lasers in continuous-wave(CW)operation with an emitting frequency above 5 *** performance with a smaller leakage current and higher population inversion efficiency is obtained by one-well bridged bound-to-continuum hybrid quantum design at 5 *** designing and fabricating a graded metallic sampled distributed feedback grating in the waveguide,the first single-mode THz quantum cascade laser at 5.13 THz in CW operation mode is *** maximum single-mode optical power of~48 mW is achieved at 15 K with a side-mode suppression ratio above 24 *** will draw great interest in the spectroscopy applications above the 5 THz range for THz quantum cascade lasers.

关键词： waveguide mode quantum

High-power distributed feedback lasers based on InP corrugated sidewalls atλ~2μm

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光子学研究:英文版 2023年第8期11卷 1390-1396页

作者： YONGQIANG SUN YUNFEI XU JINCHUAN ZHANG FENGMIN CHEN JUNQI LIU SHUMAN LIU QUANYONG LU NING ZHUO LIJUN WANG FENGQI LIU shenqiang zhai Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsBeijing Key Laboratory of Low Dimensional Semiconductor Materials and DevicesChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Beijing Academy of Quantum Information Sciences Beijing 100193China

We report a high-power single-mode InP-based 2μm distributed feedback(DFB)laser with a second-order buried grating and corrugated sidewalls.A second-order semiconductor grating is used for in-plane feedback and vertical *** corrugated sidewalls are used to eliminate higher-order transverse *** the DFB laser with a 2 mm long cavity and 15μm wide ridge,the maximum continuous-wave edge-emitting and surface-emitting single-mode powers at 300 K are up to 81 and 42 m W,respectively.A single-lobed far-field radiation pattern with a low divergence angle of approximately 8.6°is achieved by a device with a ridge width of 15μ*** single-longitudinal-mode emission wavelength of the fabricated laser can be adjusted from2003.8 nm at 288 K to 2006.9 nm at 313 K without any mode *** single-mode emission with a side-mode suppression ratio of 30 dB is achieved under all injection currents and temperature conditions.

关键词： 2μm power walls

Optical and electronic anisotropy of a 2D semiconductor SiP

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Nano Research 2022年第9期15卷 8579-8586页

作者： Shijun Hou Zhengfeng Guo Tao Xiong Xingang Wang Juehan Yang Yue-Yang Liu Zhi-Chuan Niu Shiyuan Liu Bing Liu shenqiang zhai Honggang Gu Zhongming Wei State Key Laboratory of Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100083China State Key Laboratory of Digital Manufacturing Equipment and Technology Huazhong University of Science and TechnologyWuhan 430074China Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Joint Laboratory of Advanced Semiconductor Nanjing Guoke Semiconductor CO.Ltd.Nanjing 210008China

Two-dimensional anisotropic materials have been widely concerned by researchers because of their great application potential in the field of polarized detector devices and optical elements,which is a very important and popular research direction at *** a IV-V two-dimensional material,silicon phosphide(SiP)has obvious in-plane anisotropy and exhibits excellent optical and electrical anisotropy ***,the optical anisotropy of SiP is studied by spectrometric ellipsometry measurements and polarization-resolved optical microscopy,and its electrical anisotropy is tested by SiP-based field-effect *** addition,the normal and anisotropic photoelectric performance of SiP is shown by fabricating a photodetector and measuring *** various measurements,SiP exhibits obvious anisotropy and good photoelectric *** work provides basic optical,electrical,and photoelectric performance information of SiP,and lays a foundation for further study of SiP and applications of SiP-based devices.

关键词： two-dimensional materials SiP optical anisotropy electrical anisotropy photoelectronic properties

Dual-mode distributed feedback quantum cascade laser based on stacked 3D monolithic integration for on-chip multi-channel gas sensing

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Photonics Research 2023年第12期11卷 2113-2120页

作者： XIYU LU YANJIAO GUAN PENGCHANG YANG SHAN NIU YU MA LIJUN WANG NING ZHUO JINCHUAN ZHANG shenqiang zhai FENGMIN CHENG SHUMAN LIU FENGQI LIU JUNQI LIU Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing Key Laboratory of Low Dimensional Semiconductor Materials and DevicesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

To facilitate the development of on-chip integrated mid-infrared multi-channel gas sensing systems,we propose a high-power dual-mode(7.01 and 7.5μm)distributed feedback quantum cascade laser based on stacked 3D monolithic *** mode control is achieved by preparing longitudinal nested bi-periodic compound one-dimensional Bragg gratings along the direction of the cavity length in the confinement ***,transverse coherent coupling ridges perpendicular to the cavity length direction are fabricated in the upper waveguide layer to promote the fundamental transverse mode output when all ridges are in *** dual-wavelength simultaneous emission with a side-mode suppression ratio of more than 20 dB was achieved by holographic exposure and wet *** entire spectral tuning range covers nearly 100 nm through joint tuning of the injection current and heat-sink *** peak power and beam quality are guaranteed by the parallel coherent integration of seven-element ridge *** device operates in a fundamental supermode with a single-lobed far-field pattern,and its peak output power reaches 3.36 W in pulsed mode at 20℃.This dual-mode laser chip has the potential for in-situ on-chip simultaneous detection of CH4and C2H6gases in leak monitoring.

关键词： tuning waveguide mode

High powerλ~8.5μm quantum cascade laser grown by MOCVD operating continuous-wave up to 408 K

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Journal of Semiconductors 2021年第11期42卷 55-60页

作者： Teng Fei shenqiang zhai Jinchuan Zhang Ning Zhuo Junqi Liu Lijun Wang Shuman Liu Zhiwei Jia Kun Li Yongqiang Sun Kai Guo Fengqi Liu Zhanguo Wang Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices Beijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

Robust quantum cascade laser(QCL)enduring high temperature continuous-wave(CW)operation is of critical importance for some *** report on the realization of lattice-matched InGaAs/InAlAs/InP QCL materials grown by metal-organic chemical vapor deposition(MOCVD).High interface quality structures designed for light emission at 8.5μm are achieved by optimizing and precise controlling of growth conditions.A CW output power of 1.04 W at 288 K was obtained from a 4 mm-long and 10μm-wide coated *** maximum wall-plug efficiency and threshold current density were 7.1%and 1.18 kA/cm2,*** device can operate in CW mode up to 408 K with an output power of 160 mW.

关键词： quantum cascade laser metal-organic chemical vapor deposition continuous-wave interface roughness

Coupled-ridge waveguide quantum cascade laser array lasing at λ~5μm

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Journal of Semiconductors 2021年第9期42卷 72-76页

作者： Pengchang Yang Jinchuan Zhang Zenghui Gu Chuanwei Liu Yue Zhao Fengmin Cheng shenqiang zhai Ning Zhuo Junqi Liu Lijun Wang Shuman Liu Fengqi Liu School of Microelectronics University of Chinese Academy of SciencesBeijing 100049China Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing Key Laboratory of Low Dimensional Semiconductor Materials and DevicesBeijing 100083China School of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

In this work,we demonstrated high-power quantum cascade laser(QCL)arrays lasing at λ~5μm by employing an optimized coupled-ridge waveguide(CRW)***-element QCL arrays were simulated and fabricated through a two-step etching method to extend the CRW structure to a mid-wave infrared regime.A lateral far-field with the main peak near a diffraction-limited intensity curve of about 10°was observed by properly designing a geometric shape of the ridges and *** introducing a buried 2nd-order distributed feedback(DFB)grating,substrate emission with a radiation power above 1 W at 25℃ is *** longitudinal mode operation is obtained by changing the temperature of the heatsink with a good linear wavelength tuning coefficient of -0.2 cm^(-1)/K.

关键词： quantum cascade laser array coupled-ridge waveguide mid-infrared