检索结果-南通市图书馆

Towards growth of pure AB-stacked bilayer graphene single crystals

Nano Research 2024年第5期17卷 4616-4621页

作者： Xiaowen Zhang Tao Zhou Yunlong Ren Zuo Feng ruixi qiao Qinghe Wang Bin Wang Jinxia Bai Muhong Wu Zhilie Tang Xu Zhou Kaihui Liu Xiaozhi Xu Guangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum MaterialsSchool of PhysicsSouth China Normal UniversityGuangzhou 510006China Guangdong-Hong Kong Joint Laboratory of Quantum Matter School of PhysicsSouth China Normal UniversityGuangzhou 510006China Physical Science and Engineering Division King Abdullah University of Science and TechnologyThuwal 23955–6900Saudi Arabia State Key Laboratory for Mesoscopic Physics Frontiers Science Center for Nano-optoelectronicsSchool of PhysicsPeking UniversityBeijing 100871China Institute for Frontier Science Nanjing University of Aeronautics and AstronauticsNanjing 210094China International Centre for Quantum Materials Collaborative Innovation Centre of Quantum MatterPeking UniversityBeijing 100871China Songshan Lake Materials Laboratory Institute of PhysicsChinese Academy of SciencesDongguan 523808China

Given its intriguing band structure and unique tunable bandgap,AB-stacked bilayer graphene has great potentials in the applications of high-end electronics,optoelectronics and semiconductors.The epitaxial growth of AB-stacked single-crystal bilayer graphene films requires a strict AB-stacked lattice,identical orientations and seamless stitching of bilayer graphene islands.However,the particles inevitably present on the metal surface that produced during high temperature growth would induce random orientations,twisted stacking islands,and uncontrollable multilayers,which is a great challenge to overcome.Here,we propose a heat-resisting-box assisted strategy to produce nearly pure AB-stacked bilayer graphene single-crystal films on Cu/Ni(111)foils.With our technique,the particles on the Cu/Ni(111)surface are effectively eliminated,which greatly minimizes the occurrence of randomly twisted islands and uncontrollable multilayers.The as-grown AB-stacked bilayer graphene films show>99%alignment and>99%AB stacking order.Our work provides a promising method towards the growth of pure AB-stacked bilayer graphene single crystals and would accelerate its device applications.

关键词： bilayer graphene AB stacking uniform growth heat-resisting box

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Abnormal anti-oxidation behavior of hexagonal boron nitride grown on copper

引用

Nano Research 2022年第8期15卷 7577-7583页

作者： Li Wang Jiajie Qi Shuai Zhang Mingchao Ding Wei Wei Jinhuan Wang Zhihong Zhang ruixi qiao Zhibin Zhang Zehui Li Kehai Liu Ying Fu Hao Hong Can Liu Muhong Wu Wenlong Wang Jun He Yi Cui Qunyang Li Xuedong Bai Kaihui Liu State Key Laboratory for Mesoscopic Physics Frontiers Science Center for Nano-optoelectronicsSchool of PhysicsPeking UniversityBeijing 100871China Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of SciencesBeijing 100190China Department of Engineering Mechanics State Key Laboratory of TribologyTsinghua UniversityBeijing 100084China Vacuum Interconnected Nanotech Workstation Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China School of Chemistry and Chemical Engineering Beijing Institute of TechnologyBeijing 100081China International Centre for Quantum Materials Collaborative Innovation Centre of Quantum MatterPeking UniversityBeijing 100871China Songshan Lake Materials Laboratory Institute of PhysicsChinese Academy of SciencesDongguan 523808China CAS Center for Excellence in Nanoscience CAS Key Laboratory of Nanosystem and Hierarchical FabricationNational Center for Nanoscience and TechnologyBeijing 100190China School of Physical Sciences University of Chinese Academy of SciencesBeijing 100049China

Atomic-layered hexagonal boron nitride(hBN)is expected to be the best two-dimensional(2D)anti-oxidation layer on metals for its incomparable impermeability,insulativity,and stability,as well as the progressive bottom-up growth techniques to ensure fast coating on metal surface in large area.However,its real anti-oxidation ability in practice is found to be unsatisfactory and nonuniform,and the main obstacle to achieving ideal anti-oxidation performance lies in unclear anti-oxidation behavior at special interface between 2D hBN and three-dimensional(3D)metals.Herein,system of monolayer hBN grown on copper(Cu)foils with various lattice orientations was grown to investigate the anti-oxidation behavior of different interlayer configurations.By using structural characterizations together with analysis of topography,we surprisingly found that stronger interlayer coupling led to worse anti-oxidation performance owing to fast diffusion of O2 through higher hBN corrugations generated at the commensurate hBN/Cu(111)configuration.In view of this,we developed the approach of cyclic reannealing that can effectively flatten corrugations and steps,and therefore improve the anti-oxidation performance to a great extent.This work provides a more indepth understanding of anti-oxidation behavior of 2D materials grown on 3D metals,and a practical method to pave the way for its large-scale applications in future.

关键词： hexagonal boron nitride anti-oxidation of metals nanoscale corrugation cyclic reannealing method

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Towards intrinsically pure graphene grown on copper

引用

Nano Research 2022年第2期15卷 919-924页

作者： Xiaozhi Xu ruixi qiao Zhihua Liang Zhihong Zhang Ran Wang Fankai Zeng Guoliang Cui Xiaowen Zhang Dingxin Zou Yi Guo Can Liu Ying Fu Xu Zhou Muhong Wu Zhujun Wang Yue Zhao Enke Wang Zhilie Tang Dapeng Yu Kaihui Liu Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials School of Physics and Telecommunication EngineeringSouth China Normal UniversityGuangzhou 510006China Guangdong-Hong Kong Joint Laboratory of Quantum Matter South China Normal UniversityGuangzhou 510006China State Key Laboratory for Mesoscopic Physics Frontiers Science Center for Nano-optoelectronicsSchool of PhysicsPeking UniversityBeijing 100871China International Centre for Quantum Materials Collaborative Innovation Centre of Quantum MatterPeking UniversityBeijing 100871China Shenzhen Institute for Quantum Science and Engineering and Department of PhysicsSouthern University of Science and TechnologyShenzhen 518055China Songshan Lake Materials Laboratory Institute of PhysicsChinese Academy of SciencesGuangdong 523808China School of Physical Science and Technology ShanghaiTech UniversityShanghai 200031China

The state-of-the-art semiconductor industry is built on the successful production of silicon ingot with extreme purity as high as 99.999999999%,or the so-called"eleven nines".The coming high-end applications of graphene in electronics and optoelectronics will inevitably need defect-free pure graphene as well.Due to its two-dimensional(2D)characteristics,graphene restricts all the defects on its surface and has the opportunity to eliminate all kinds of defects,i.e.,line defects at grain boundaries and point or dot defects in grains,and produce intrinsically pure graphene.In the past decade,epitaxy growth has been adopted to grow graphene by seamlessly stitching of aligned grains and the line defects at grain boundaries were eliminated finally.However,as for the equally common dot and point defects in graphene grain,there are rare ways to detect or reduce them with high throughput and efficiency.Here,we report a methodology to realize the production of ultrapure graphene grown on copper by eliminating both the dot and point defects in graphene grains.The dot defects,proved to be caused by the silica particles shedding from quartz tube during the high-temperature growth,were excluded by a designed heat-resisting box to prevent the deposition of particles on the copper surface.The point defects were optically visualized by a mild-oxidation-assisted method and further reduced by etching-regrowth process to an ultralow level of less than 1/1,000 μm^(2).Our work points out an avenue for the production of intrinsically pure graphene and thus lays the foundation for the large-scale graphene applications at the integrated-circuit level.

关键词： pure graphene point defect mild-oxidation copper

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Visualizing grain boundaries in monolayer MoSe2 using mild H2O vapor etching

引用

Nano Research 2018年第8期11卷 4082-4089页

作者： Jinhuan Wang Xiaozhi Xu ruixi qiao Jing Liang Can Liu Bohao Zheng Lei Liu Peng Gao Qingze Jiao Dapeng Yu Yun Zhao Kaihui Liu School of Chemistry and Chemical Engineering Beijing Institute of Technology Beijing 100081 China State Key Laboratory for Mesoscopic Physics School of Physics Peking University 8eijing 100871 China Department of Materials Science and Engineering College of Engineering Peking University 8eijing 100871 China International Centre for Quantum Materials and Electron Microscopy Laboratory School of Physics Peking University Beijing 10087 I China Department of Physics South University of Science and Technology of China Shenzhen 518055 China Collaborative Innovation Centre of Quantum Matter Beijing 100871 China Jinhuan Wang Xiaozhi Xu and Ruixi Qiao contributed equally to this work.

Beyond graphene, two-dimensional （2D） transition metal dichalcogenides （TMDs） have attracted significant attention owing to their potential in next-generation nanoelectronics and optoelectronics. Nevertheless, grain boundaries are ubiquitous in large-area as-grown TMD materials and would significantly affect their band structure, electrical transport, and optical properties. Therefore, the characterization of grain boundaries is essential for engineering the properties and optimizing the growth in TMD materials. Although the existence of boundaries can be measured using scanning tunneling microscopy, transmission electron microscopy, or nonlinear optical microscop~ a universal, convenient, and accurate method to detect boundaries with a twist angle over a large scale is still lacking. Herein, we report a high-throughput method using mild hot H20 etching to visualize grain boundaries of TMDs under an optical microscope, while ensuring that the method is nearly noninvasive to grain domains. This technique utilizes the reactivity difference between stable grain domains and defective grain boundaries and the mild etching capacity of hot water vapor. As grain boundaries of two domains with twist angles have defective lines, this method enables to visualize all types of grain boundaries unambiguously. Moreover, the characterization is based on an optical microscope and therefore naturally of a large scale. We further demonstrate the successful application of this method to other TMD materials such as MoS2 and WSe2. Our technique facilitates the large-area characterization of grain boundaries and will accelerate the controllable growth of large single-crystal TMDs.

关键词： MoSez,grain boundar3 hot water vapor single crystal

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Low-temperature epitaxy of transferable high-quality Pd(111)films on hybrid graphene/Cu(111)substrate

引用

Nano Research 2019年第11期12卷 2712-2717页

作者： Zhihong Zhang Xiaozhi Xu ruixi qiao Junjiang Liu Yuxia Feng Zhibin Zhang Peizhao Song Muhong Wu Lan Zhu Xuelin Yang Peng Gao Lei Liu Jie Xiong Enge Wang Kaihui Liu State Key Laboratory for Mesoscopic Physics International Centre for Quantum MaterialsCollaborative Innovation Centre of Quantum MatteSchool of PhysicsAcademy for Advanced Interdisciplinary StudiesPeking UniversityBejing 100871China Physical Science Laboratory Huairou National Comprehensive Science CentreBeijing 101400China School of Physics and Telecommunication Engineering South China Normal UniversityGuangzhou 510631China Department of Materials Science and Engineering College of EngineeringPeking UniversityBeijing 100871China Songshan Lake Materials Laboratory Institute of PhysicsChinese Academy of SciencesGuangdong 523808China Peking Union Medical College Hospital Beijing 100730China State Key Laboratory of Electroric Thin Films and ltegrated Devices University of Electronic Science and Teclmology of ChinaChengdu 610054China

The continuous pursuit of miniaturization in the electronics and optoelectronics industry demands all device components with smaller size and higher performance,in which thin metal film is one heart material as conductive electrodes.However,conventional metal filmns are typically polycrystalline with random domain orientations and various grain boundaries,which greatly degrade their mechanical,thermal and electrical properties.Hence,it is highly demanded to produce single-crystal metal films with epitaxy in an appealing route.Traditional epitaxy on non-metal single-crystal substrates has difficulty in exfoliating away due to the formation of chemical bonds.Newly developed epitaxy on single-crystal graphene enables the easy exfoliation of epilayers but the annealing temperature must be high(typical 500-1,000℃ and out of the tolerant range of integrated circuit technology)due to the relative weak intertacial interactions.Here we demonstrate the facile production of 6-inch transferable high-quality Pd(111)filims on single-crystal hybrid graphene/Cu(111)substrate with CMOS-compatible annealing temperature of 150℃ only.The interfacial interaction between Pd and hybrid graphene/Cu(111)substrate is strong enough to enable the low-temperature epitaxy of Pd(111)films and weak enough to facilitate the easy film release from substrate.The obtained Pd(111)films possess superior properties to polyrystalline ones with-0.25 eV higher work function and almost half sheet resistance.This technique is proved to be applicable to other metals,such as Au and Ag.As the single-crystal graphene/Cu(111)substrates are obtained from industrial Cu foils and accessible in meter scale,our work will promote the massive applications of large-area high-quality metal fims in the development of next-generation electronic and optoelectronic devices.

关键词： single-crystal metal film graphene/Cu(111)substrate intertacial interactions meter scale

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

癌症患者人生目标调整能力及其对身心健康影响的研究新进展

引用

中国全科医学 2024年第23期27卷 2822-2828页

作者：冉倬睿孙睿歆贾婧怡车照宇黎芮希何亚平楚翘上海交通大学医学院附属瑞金医院上海市200025 上海交通大学医学院医学技术学院医学检验技术系上海市200025 上海交通大学医学院上海市200025 上海交通大学医学院公共卫生学院上海市200025 上海交通大学中国医院发展研究院卫生技术评估研究所上海市200025

罹患癌症是一件重大创伤事件,对个体人生目标的追求造成严重干扰,并导致多种情绪障碍。而合理地调整人生目标有利于患者重建人生方向,改善身心健康。本文通过文献综述的方式,梳理国内外有关癌症影响患者人生目标追求的研究现状,并归纳... 详细信息

罹患癌症是一件重大创伤事件,对个体人生目标的追求造成严重干扰,并导致多种情绪障碍。而合理地调整人生目标有利于患者重建人生方向,改善身心健康。本文通过文献综述的方式,梳理国内外有关癌症影响患者人生目标追求的研究现状,并归纳现有文献中有关癌症患者的目标调整行为及其对患者身心健康影响的研究进展。文献综述表明,确诊癌症对患者人生的目标追求造成的影响主要表现为对目标追求的自我效能感、目标追求能力及目标优先级设定的影响。而合理的目标调整行为有利于改善患者的身心健康,包括:促进积极情绪、缓解消极情绪、减轻躯体不适症状及提升生活质量。因此,未来针对癌症患者情绪健康的干预设计可立足于指导患者对人生目标进行重新规划和调整,以此提高患者的生活质量、促进情绪健康、改善疾病预后。

关键词：肿瘤目标调整心理健康生活质量疾病预后综述

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

电镀法实现毫米厚单晶铜板的制备

引用

Science Bulletin 2023年第15期68卷 1611-1615,M0003页

作者：李兴光张智宏张志斌寇金宗吴慕鸿赵孟泽乔瑞喜丁志强张志强刘放杨晓楠邹定鑫王新强高鹏付莹王恩哥刘开辉 State Key Laboratory for Mesoscopic Physics Frontiers Science Centre for Nano-optoelectronicsSchool of PhysicsPeking UniversityBeijing 100871China Beijing Advanced Innovation Center for Materials Genome Engineering Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface ScienceState Key Laboratory for Advanced Metals and MaterialsUniversity of Science and Technology BeijingBeijing 100083China Songshan Lake Materials Laboratory Dongguan 523808China Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of SciencesBeijing 100190China International Centre for Quantum Materials Collaborative Innovation Centre of Quantum MatterPeking UniversityBeijing 100871China Interdisciplinary Institute of Light-Element Quantum Materials and Research Centre for Light-Element Advanced Materials Peking UniversityBeijing 100871China Shenzhen Institute for Quantum Science and Engineering Southern University of Science and TechnologyShenzhen 518055China School of Physics Liaoning UniversityShenyang 110036China

在单晶衬底上外延电镀金属为获得高度有序的金属薄膜提供了一种经济高效的方法.在传统外延电镀过程中,随镀层厚度增加,缺陷数量变多,出现孪晶,并进一步导致镀层结构向多晶转变,使得传统单晶衬底上的外延电镀只能获得几微米厚的单晶薄膜... 详细信息

在单晶衬底上外延电镀金属为获得高度有序的金属薄膜提供了一种经济高效的方法.在传统外延电镀过程中,随镀层厚度增加,缺陷数量变多,出现孪晶,并进一步导致镀层结构向多晶转变,使得传统单晶衬底上的外延电镀只能获得几微米厚的单晶薄膜.因此,需要开发一种新的策略来调节电镀过程,实现更厚金属单晶的制备.本文以高指数单晶铜箔(25μm)为阴极,利用外延电镀法成功制备出毫米厚的单晶铜板.研究发现,高指数单晶铜表面独特的原子台阶,能够引导铜原子的有序沉积,减少缺陷、层错或晶格孪晶的形成,进而有助于更厚单晶铜的外延电镀.与相同厚度的多晶铜相比,所制备的单晶铜在电导率、延展性和疲劳性能方面有显着提升.该工作为单晶铜板的规模化生产提供了新的策略,有望推动单晶铜在高速、大功率、柔性电路等领域的高端应用.

关键词：电镀过程多晶转变镀层厚度镀层结构电镀法金属薄膜单晶铜铜原子

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Scrolled Production of Large-Scale Continuous Graphene on Copper Foils

引用

Chinese Physics Letters 2020年第10期37卷 120-124页

作者：张志斌戚嘉杰赵孟泽尚念泽程阳乔瑞喜张智宏丁铭超李兴光刘科海徐小志刘开辉刘灿吴慕鸿 State Key Laboratory for Mesoscopic Physics Frontiers Science Center for Nano-optoelectronicsSchool of PhysicsPeking UniversityBeijing 100871China International Centre for Quantum Materials Collaborative Innovation Centre of Quantum MatterPeking UniversityBeijing 100871China Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of SciencesBeijing 100190China Songshan Lake Materials Laboratory Institute of PhysicsChinese Academy of SciencesGuangdong 523808China Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials School of Physics and Telecommunication EngineeringSouth China Normal UniversityGuangzhou 510631China

We report an efficient and economical way for mass production of large-scale graphene films with high quality and uniformity.By using the designed scrolled copper-graphite structure,a continuous graphene film with typical area of 200×39 cm^2 could be obtained in 15 min,and the production rate of the graphene film and space utilization rate of the CVD reactor can reach 520 cm 2⋅min−1 and 0.38 cm−1⋅min−1,respectively.Our method provides a guidance for the industrial production of graphene films,and may also accelerate its large-scale applications.

关键词： Copper guidance production

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

A Hf0.5Zr0.5O2 ferroelectric capacitor-based half-destructive read scheme for computing-in-memory

引用

Science China(Information Sciences) 2023年第5期66卷 303-304页

作者： Yulin ZHAO Yuan WANG Donglin ZHANG Zhongze HAN qiao HU Xuanzhi LIU Qingting DING Jinhui CHENG Wenjun ZHANG Yue CAO ruixi ZHOU Qing LUO Jianguo YANG Hangbing LV Key Laboratory of Microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences University of Chinese Academy of Sciences School of Microelectronics University of Science and Technology of China Zhejiang Lab

The emerging non-volatile memories (NVMs), including resistive random access memory (RRAM)[1], phase-change memory (PCM)[2], and ferroelectric random access memory (Fe RAM)[3], have broad application prospects owing to their non-volatility and near-zero static energy consumption. Compared to other NVMs, ferroelectric capacitors(Fe CAPs) ofer advantages in energy consumption and endurance. However, the destructive read operation of capacitors (e.g., DRAMs and Fe CAPs) destroys the stored data.

关键词：

来源：

同方期刊数据库评论

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

一种基于双重ddPCR的肉制品中牛源性成分的定量分析方法

引用

食品科学 2022年第24期43卷 318-324页

作者：熊苏玥李家鹏李金春韦忆萱许随根刘睿茜陈曦王守伟曲超乔晓玲中国肉类食品综合研究中心北京食品科学研究院国家肉类加工工程技术研究中心肉类加工技术北京市重点实验室北京100068

将低价肉类原料掺入高价肉制品是一种典型的肉类掺假方式,为准确鉴别牛肉及牛肉制品的真伪,建立一种基于双重微滴式数字聚合酶链式反应(droplet digital polymerase chain reaction,ddPCR)的牛源性成分定量分析方法。通过对14种动物的Be... 详细信息

将低价肉类原料掺入高价肉制品是一种典型的肉类掺假方式,为准确鉴别牛肉及牛肉制品的真伪,建立一种基于双重微滴式数字聚合酶链式反应(droplet digital polymerase chain reaction,ddPCR)的牛源性成分定量分析方法。通过对14种动物的Beta-actin单拷贝基因序列进行分析,设计牛源性特异性引物、探针与动物源性成分通用引物、探针并建立双重ddPCR体系,推导出牛源性成分质量与其特异性扩增拷贝数之间的计算公式,对牛源性成分进行定量检测该方法得到牛源性成分质量M_(牛)(mg)与其特异性扩增拷贝数浓度C_(牛)(copies/μL)之间的计算公式为M_(牛)=0.033C_(牛)+2.37,对已知牛肉质量的混合肉样品与不同部位的牛肉样品进行检测,结果显示牛肉定量检测值与实际质量基本一致。同时拷贝数相对含量可辅助判断肉制品中是否存在非牛源性的其他动物源性成分掺假。对市售样品的检测发现,存在目标肉样含量不达标以及不同程度的动物源性成分等掺假现象,说明该检测方法可为牛肉制品掺假量化判定和混合源性产品分级鉴定提供技术支撑。

关键词：牛源性成分双重微滴式数字聚合酶链式反应定量检测肉类掺假

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

欢迎您,

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

请选择保存的检索档案：

请选择收藏分类：

通借通还

欢迎您,

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：