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Low Power and High Sensitivity MOSFET-Based Pressure Sensor

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Chinese Physics Letters 2012年第8期29卷 276-278页

作者： ZHANG Zhao-Hua ren tian-ling ZHANG Yan-Hong HAN Rui-Rui LIU Li-tian Tsinghua National Laboratory for Information Science and Technology Institute of MicroelectronicsTsinghua UniversityBeijing 100084

Based on the metal-oxide-semiconductor field effect transistor(MOSFET)stress sensitive phenomenon,a low power MOSFET pressure sensor is *** with the traditional piezoresistive pressure sensor,the present pressure sensor displays high performances on sensitivity and power *** sensitivity of the MOSFET sensor is raised by 87%,meanwhile the power consumption is decreased by 20%.

关键词： power MOSFET transistor

A Novel Fabrication Method for Flexible SOI Substrate Based on Trench Refilling with Polydimethylsiloxane

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Chinese Physics Letters 2013年第8期30卷 118-121页

作者： ZHANG Cang-Hai YANG Yi WANG Yu-Feng ZHOU Chang-Jian SHU Yi tian He ren tian-ling Institute of Microelectronics Tsinghua UniversityBeijing 100084 Tsinghua National Laboratory for Information Science and Technology Tsinghua UniversityBeijing 100084

Flexible arrays based on the flexible connection of double layers are *** sensor arrays are highly desired for many *** flexible electronics are implemented by directly fabricating them on organic flexible substrates such as polyimide or polyethylene terephthalate,or forming on rigid substrates and then transferring them onto elastomeric *** the first time,a novel process method based on trench refilling with polydimethylsiloxane to make flexible arrays is *** this method,the sensors are directly fabricated on islands of the final bulk *** performance of the sensor will not to be effected by bending and stretching operations.A one-dimensional flexible array shows good *** the flexibility process is the last fabrication step,this method is compatible with many micro-electro-mechanical system fabrication technologies and has good yield.

关键词： trench SOI stretching

Wafer-Scale Flexible Surface Acoustic Wave Devices Based on an AlN/Si Structure

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Chinese Physics Letters 2013年第7期30卷 229-232页

作者： ZHANG Cang-Hai YANG Yi ZHOU Chang-Jian SHU Yi tian He WANG Zhe XUE Qing-Tang ren tian-ling Institute of Microelectronics Tsinghua UniversityBeijing 100084 Tsinghua National Laboratory for Information Science and Technology(TNLIST) Tsinghua UniversityBeijing 100084

Wafer-scale flexible surface acoustic wave(SAW)devices based on AlN/silicon structure are *** final fabricated devices with a 50μm-thickness silicon wafer exhibit good flexibility with a bending curvature radius of 8 *** under free and bending conditions are carried out,showing that the central frequency shifts little as the curvature *** devices with central frequency about 191.9 MHz and Q-factor up to 600 are *** flexible technology proposed is directly applied to the wafer silicon substrate in the last step,providing the potential of high performance flexible wafer-scale devices by direct integration with mature CMOS and MEMS technology.

关键词： curvature bending Acoustic

Cluster Model for p-Type Doping of ZnSe

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Chinese Physics Letters 1997年第7期14卷 528-530页

作者： ren tian-ling ZHU Jia-lin XIONG Jia-jiong DUAN Wen-hui WANG Fu-he Department of Physics Tsinghua UniversityBeijing 100084 Institute of Physics Chinese Academy of SciencesBeijing 100080

Cluster model with DV-Xαmethod is used to study the structural and electronic properties of the p-type doping of *** is found that there is Jahn-Teller distortion for P doping and almost no Jahn-Teller distortion for N doping,and that the impurity levels with respect to the maximum of valence band are 118 and 96meV for N and P doping,*** reasons why N can serve as a better dopant than P for p-type ZnSe are discussed.

关键词： ZnSe dopant doping

The Structural and Electrical Properties of Al/Pb(Zr_(0.52)Ti_(0.48))O_(3)/Al_(2)O_(3)/Si with an Al_(2)O_(3) Layer Prepared by using the Molecular Atomic Deposition Method

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Chinese Physics Letters 2012年第12期29卷 243-245页

作者： YANG Yi ZHOU Chang-Jian PENG Ping-Gang XIE Dan ren tian-ling PAN Xiao LIU Jing-Song Tsinghua National Laboratory for Information Science and Technology&Institute of Microelectronics Tsinghua UniversityBeijing 100084 Department of Applied Physics Yale UniversityNew Haven CT06520USA State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials Southwest University of Science and TechnologyMianyang 621010

The structural and electrical properties of a metal-ferroelectric-insulator-semiconductor(MFIS)structure with an Al_(2)O_(3) layer prepared by using the molecular atomic deposition method and Pb(Zr_(0.52)Ti_(0.48))O_(3)(PZT)deposited by the radio frequency magnetron sputtering method are *** exhibits a very smooth surface and(110)orientation of the perovskite *** MFIS structure shows well-behaved clockwise capacitance-voltage hysteresis loops due to the ferroelectric polarization under a sweep voltage up to±40 *** windows of 1.9 V and 18.14 V in conjunction with leakage current density of 2.42×10^(-7) A/cm^(2) and 8.28×10^(-7) A/cm^(2) are obtained under sweep voltages of±5 V and±20 V,respectively.

关键词： ferroelectric hysteresis structure

Magnetic-Particle-Composite-Medium-Filled Stacked-Spiral Inductors for Radio-Frequency CMOS Applications

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Chinese Physics Letters 2013年第12期30卷 174-178页

作者： ZHAN Jing CAI Hua-Lin CHEN Xiao WANG Xin FANG Qiang YANG Yi ren tian-ling LIU Li-tian LI Xin-Xin WANG Albert YANG Chen Institute of Microelectronics and Tsinghua National Laboratory for Information Science and TechnologyTsinghua UniversityBeijing 100084 Shanghai Institute of Microsystem and Information Technology Shanghai 200050 Department of Electrical Engineering University of CaliforniaRiversideCA 92521USA

Magnetic-particle-composite-medium-filled stacked-spiral inductors for rf complementary metal oxide semiconductor(CMOS)applications in GHz are *** new inductor features a nearly closed magnetic circuit loop,an optimized high-permeability and low-loss sub-1μm magnetic particles'composite core,and a developed 0.18-μm CMOS-compatible device fabrication *** equivalent circuit model with structural amplifying factors is proposed and *** prototype of the 6-level stacked inductor with Co_(2)Z magnetic-particles-composite-medium filling increases the inductance L by 50%,and quality factor Q by 37%at frequencies as high as 1 GHz,with high inductance density as 825 nH/mm2 and a reduced size area by 80%compared to the planar spiral inductor.

关键词： inductor composite filled

镜像阻抗连接SAWF的Simulink建模和特性模拟

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压电与声光 2001年第2期23卷 89-91页

作者：杨磊任天令刘理天清华大学微电子研究所北京100084

镜像阻抗连接结构滤波器是一种低插损、高阻带抑制、高旁瓣抑制的声表面波滤波器。文章介绍了该结构的工作原理和物理模型 ,并使用 Matlab中的 Simulink工具对镜像阻抗连接结构加以数学模型化 ,然后进行了特性模拟 ,得到滤波器的频率响... 详细信息

镜像阻抗连接结构滤波器是一种低插损、高阻带抑制、高旁瓣抑制的声表面波滤波器。文章介绍了该结构的工作原理和物理模型 ,并使用 Matlab中的 Simulink工具对镜像阻抗连接结构加以数学模型化 ,然后进行了特性模拟 ,得到滤波器的频率响应特性。

关键词：镜像阻抗连续结构声表面滤波器射频建模特性模拟 Simulink

利用退火方法降低自旋阀薄膜的矫顽力(英文)

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光学精密工程 2009年第6期17卷 1322-1326页

作者：李伟刘华瑞任天令刘理天重庆大学光电技术与系统教育部重点实验室重庆400044 重庆大学微系统研究中心重庆400044 清华大学微电子学研究所北京100084

降低自旋阀薄膜矫顽力对于制作巨磁电阻(GMR)传感器非常重要。报告了利用退火方法降低自旋阀薄膜矫顽力的实验结果,介绍了数值模拟退火的条件和方法,借助计算机对退火实验的条件及其实验结果进行了模拟。结果表明,模拟后的结果可以用来... 详细信息

降低自旋阀薄膜矫顽力对于制作巨磁电阻(GMR)传感器非常重要。报告了利用退火方法降低自旋阀薄膜矫顽力的实验结果,介绍了数值模拟退火的条件和方法,借助计算机对退火实验的条件及其实验结果进行了模拟。结果表明,模拟后的结果可以用来进一步优化退火条件,并不再需要做大量退火实验。使用优化后的退火条件大大降低了自旋阀薄膜的矫顽力同时可保持自旋阀的磁电阻变化率(MR)在较高的水平。介绍了不同退火参数下的模拟实验,结果显示退火前样品的的矫顽力为358.2 A/ m、MR为9.24%,退火后其分别降到3.18 A/ m和8.54%,表明数值模拟方法可以较好地拟合自旋阀薄膜的退火条件及实验结果,并有助于优化退火条件。

关键词：自旋阀薄膜退火数值模拟

Sol-gel法制备NiZnCu铁氧体性能的研究

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功能材料 2005年第12期36卷 1849-1851,1858页

作者：刘锋杨晨任天令刘理天于军白洋华中科技大学电子科学与技术系湖北武汉430074 清华大学微电子所北京100084 清华大学材料学院北京100084

采用溶胶-凝胶自燃法制备了Ni0.4Zn0.4Cu0.2Fe2O4铁氧体,使用HP4191A阻抗分析仪测试了材料高频磁谱;结合快速热处理(RTP)工艺制备了Ni0.4Zn0.4Cu0.2Fe2O4磁性薄膜,使用AFM、XRD、AGM系统地研究了制备工艺对薄膜样品表面形貌、晶相结构... 详细信息

采用溶胶-凝胶自燃法制备了Ni0.4Zn0.4Cu0.2Fe2O4铁氧体,使用HP4191A阻抗分析仪测试了材料高频磁谱;结合快速热处理(RTP)工艺制备了Ni0.4Zn0.4Cu0.2Fe2O4磁性薄膜,使用AFM、XRD、AGM系统地研究了制备工艺对薄膜样品表面形貌、晶相结构和准静态磁性的影响。测试结果表明:Ni0.4Zn0.4Cu0.2Fe2O4可适用于射频领域,截止频率fr在1GHz以上,1GHz处起始磁导率μ′=5.3,μ″=3.45;sol-gel法制备磁性薄膜最佳晶化温度为600℃左右,在此温度下制备的薄膜晶粒大小为13nm左右,饱和磁化强度Ms=2.29×105A/m,矫顽力Hc=1.24×103A/m。

关键词：溶胶-凝胶法 NiZnCu铁氧体高频磁谱准静态磁性能