Wafer-Scale Flexible Surface Acoustic Wave Devices Based on an AlN/Si Structure

作     者：ZHANG Cang-Hai YANG Yi ZHOU Chang-Jian SHU Yi TIAN He WANG Zhe XUE Qing-Tang REN Tian-Ling 张沧海;杨轶;周长见;束逸;田禾;王哲;薛庆堂;任天令

作者机构：Institute of MicroelectronicsTsinghua UniversityBeijing 100084 Tsinghua National Laboratory for Information Science and Technology(TNLIST)Tsinghua UniversityBeijing 100084 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2013年第30卷第7期

页      面：229-232页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 61025021,60936002,and 61020106006 the National Key Project of Science and Technology(2011ZX02403-002) 

主　　题：curvature bending Acoustic 

摘      要：Wafer-scale flexible surface acoustic wave(SAW)devices based on AlN/silicon structure are *** final fabricated devices with a 50μm-thickness silicon wafer exhibit good flexibility with a bending curvature radius of 8 *** under free and bending conditions are carried out,showing that the central frequency shifts little as the curvature *** devices with central frequency about 191.9 MHz and Q-factor up to 600 are *** flexible technology proposed is directly applied to the wafer silicon substrate in the last step,providing the potential of high performance flexible wafer-scale devices by direct integration with mature CMOS and MEMS technology.