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High Thermoelectric Figure of Merit of Ag8SnS6 Component Prepared by Electrodeposition Technique

Chinese Physics Letters 2015年第12期32卷 126-130页

作者： TAHER Ghrib AMAL Lafy Al-Otaibi MUNIRAH Abdullah Almessiere IBTISSEM Ben Assaker radhouane chtourou Laboratory of Physical Alloys Science Faculty of Dammam University of Dammam Saudi Arabia Laboratoire Photovoltaique Centre de Recherches et des Technologies de l'Energie Technopole bozj cedria Bp 95 hammam lif 2050 Tunisie

A new thermoelectric material Ag8SnS6, with ultra-low thermal conductivity in thin film shape, is prepared on indium tin oxide coated g/ass （ITO） substrates using a chemical process via the electrodeposition technique. The structural, thermal and electrical properties are studied and presented in detail, which demonstrate that the material is of semiconductor type, orthorhombic structure, with a band gap in the order of 1.56eV and a free carrier concentration of 1.46 × 10^17 cm-3. The thermal conductivity, thermal diffusivity, thermal conduction mode, Seebeck coefficient and electrical conductivity are determined using the photo-thermal deflection technique combined with the Boltzmann transport theory and Cahill＇s model, showing that the AgsSnS6 material has a low thermal conductivity of 3.8 Wm - 1K- 1, high electrical conductivity of 2.4 × 10^5 Sm- 1, Seebeck coefficient of -180μVK-1 and a power factor of 6.9mWK-2m-1, implying that it is more efficient than those obtained in recently experimental investigations for thermoelectric devices.

关键词： Figure High Thermoelectric Figure of Merit of Ag8SnS6 Component Prepared by Electrodeposition Technique Ag SnS

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Effect of Substrate Nature on the Structural, Optical and Electrical Properties of In2S3 Thin Films

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Journal of Materials Science and Chemical Engineering 2022年第5期10卷 1-15页

作者： Fethi Aousgi Youssef Trabelsi Aoussaj Sbai Billel Khalfallah radhouane chtourou Laboratory of Nanomaterials and Renewable Energy Systems LaNSER Research and Technology Center of Energy Borj-Cedria Science and Technology Park Hammam-Lif Tunisia Physics Department College of Arts and Sciences in Muhail Asir King Khalid University Abha Saudi Arabia Laboratory of Photovoltaic and Semiconductor Materials University of Tunis El Manar ENIT Tunis Tunisia

In this study, In2S3 thin films have been deposited on ITO and fluorine-tinoxide FTO coated glass substrates by single source vacuum thermal evaporation annealed in vacuum a 300°C - 400°C for 1 h. The samples structure was characterized by X-ray diffraction, revealing the quadratic structure of In2S3 and the crystallinity depends on the temperature of annealing and nature of substrate. The various structural parameters, such as, crystalline size, dislocation density, strain and texture coefficient were calculated. The optical properties show that the refractive index dispersion data obeyed the single oscillator of the Wemple-DiDomenico model. By using this model, the dispersion parameters and the high-frequency dielectric constant were determined. The Hall Effect has been studied at room temperature. The Hall voltages, the Hall coefficient (RH) and mobility (μH) have been measured at different magnetic and electric fields. The films show n-type behavior irrespective of temperature and composition.

关键词： In2S3 Vacuum Evaporation Thin Films X-Ray Diffraction UV-Vis Spectrophotometer Photovoltaic

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