High Thermoelectric Figure of Merit of Ag8SnS6 Component Prepared by Electrodeposition Technique

作     者：TAHER Ghrib AMAL Lafy Al-Otaibi MUNIRAH Abdullah Almessiere IBTISSEM Ben Assaker RADHOUANE Chtourou 

作者机构：Laboratory of Physical Alloys Science Faculty of Dammam University of Dammam Saudi Arabia Laboratoire Photovoltaique Centre de Recherches et des Technologies de l'Energie Technopole bozj cedria Bp 95 hammam lif 2050 Tunisie 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2015年第32卷第12期

页      面：126-130页

核心收录：

学科分类：081702[工学-化学工艺] 08[工学] 0817[工学-化学工程与技术] 

基　　金：Supported by the Scientific Research Deanship of University of Dammam under Grant No 2014264 

主　　题：Figure High Thermoelectric Figure of Merit of Ag8SnS6 Component Prepared by Electrodeposition Technique Ag SnS 

摘      要：A new thermoelectric material Ag8SnS6, with ultra-low thermal conductivity in thin film shape, is prepared on indium tin oxide coated g/ass （ITO） substrates using a chemical process via the electrodeposition technique. The structural, thermal and electrical properties are studied and presented in detail, which demonstrate that the material is of semiconductor type, orthorhombic structure, with a band gap in the order of 1.56eV and a free carrier concentration of 1.46 × 10^17 cm-3. The thermal conductivity, thermal diffusivity, thermal conduction mode, Seebeck coefficient and electrical conductivity are determined using the photo-thermal deflection technique combined with the Boltzmann transport theory and Cahill＇s model, showing that the AgsSnS6 material has a low thermal conductivity of 3.8 Wm - 1K- 1, high electrical conductivity of 2.4 × 10^5 Sm- 1, Seebeck coefficient of -180μVK-1 and a power factor of 6.9mWK-2m-1, implying that it is more efficient than those obtained in recently experimental investigations for thermoelectric devices.