检索结果-南通市图书馆

High-performance enhancement-mode GaN-based p-FETs fabricated with O_(3)-Al_(2)O_(3)/HfO_(2)-stacked gate dielectric

在线全文

学校读者我要写书评

暂无评论

Journal of Semiconductors 2023年第10期44卷 99-103页

作者： Hao Jin Sen Huang qimeng jiang Yingjie Wang Jie Fan Haibo Yin Xinhua Wang Ke Wei Jianxun Liu Yaozong Zhong Qian Sun Xinyu Liu Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of SciencesSuzhou 215123China

In this letter,an enhancement-mode(E-mode)GaN p-channel field-effect transistor(p-FET)with a high current den-sity of−4.9 mA/mm based on a O_(3)-Al_(2)O_(3)/HfO_(2)(5/15 nm)stacked gate dielectric was demonstrated on a p++-GaN/p-GaN/AlN/AlGaN/AlN/GaN/Si *** to the p++-GaN capping layer,a good linear ohmic I−V characteristic fea-turing a low-contact resistivity(ρc)of 1.34×10^(−4)Ω·cm^(2) was *** gate leakage associated with the HfO_(2)high-k gate dielectric was effectively blocked by the 5-nm O_(3)-Al_(2)O_(3)insertion layer grown by atomic layer deposition,contributing to a high ION/IOFF ratio of 6×10^(6)and a remarkably reduced subthreshold swing(SS)in the fabricated *** proposed structure is compelling for energy-efficient GaN complementary logic(CL)circuits.

关键词： GaN p-FETs enhancement-mode HfO_(2) subthreshold swing

First demonstration of a self-aligned p-channel GaN back gate injection transistor

在线全文

学校读者我要写书评

暂无评论

Journal of Semiconductors 2024年第11期45卷 69-73页

作者： Yingjie Wang Sen Huang qimeng jiang Jiaolong Liu Xinhua Wang Wen Liu Liu Wang Jingyuan Shi Jie Fan Xinguo Gao Haibo Yin Ke Wei Xinyu Liu High-Frequency High-Voltage Device and Integrated Circuits Research and Development Center Institute of Microelectronics of the Chinese Academy of SciencesBeijing 100029China School of Integrated Circuits University of Chinese Academy of SciencesBeijing 100049China China School of Advanced Technology Xi'an Jiaotong-Liverpool UniversitySuzhou 215123China

In this study,we present the development of self-aligned p-channel Ga N back gate injection transistors(SA-BGITs)that exhibit a high ON-state *** achievement is primarily attributed to the conductivity modulation effect of the 2-D electron gas(2DEG,the back gate)beneath the 2-D hole gas(2DHG)***-BGITs with a gate length of 1μm have achieved an impressive peak drain current(I_(D,MAX))of 9.9 m A/*** fabricated SA-BGITs also possess a threshold voltage of 0.15 V,an exceptionally minimal threshold hysteresis of 0.2 V,a high switching ratio of 10~7,and a reduced ON-resistance(RON)of 548Ω·***,the SA-BGITs exhibit a steep sub-threshold swing(SS)of 173 mV/dec,further highlighting their suitability for integration into Ga N logic circuits.

关键词： GaN p-FETs self-alignment back gate threshold hysteresis conductivity modulation

Recess-free enhancement-mode AlGaN/GaN RF HEMTs on Si substrate

在线全文

学校读者我要写书评

暂无评论

Journal of Semiconductors 2024年第6期45卷 81-86页

作者： Tiantian Luan Sen Huang Guanjun Jing Jie Fan Haibo Yin Xinguo Gao Sheng Zhang Ke Wei Yankui Li qimeng jiang Xinhua Wang Bin Hou Ling Yang Xiaohua Ma Xinyu Liu High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of Microelectronics of Chinese Academy of SciencesBe i-jing 100029China School of integrated Circuits University of Chinese Academy of SciencesBeijing 100049China Faculty of integrated Circuits Xidian UniversityXi’an 710071China

Enhancement-mode(E-mode)GaN-on-Si radio-frequency(RF)high-electron-mobility transistors(HEMTs)were fabri-cated on an ultrathin-barrier(UTB)AlGaN(<6 nm)/GaN heterostructure featuring a naturally depleted 2-D electron gas(2DEG)*** fabricated E-mode HEMTs exhibit a relatively high threshold voltage(VTH)of+1.1 V with good uniformity.A maxi-mum current/power gain cut-off frequency(fT/fMAX)of 31.3/99.6 GHz with a power added efficiency(PAE)of 52.47%and an out-put power density(Pout)of 1.0 W/mm at 3.5 GHz were achieved on the fabricated E-mode HEMTs with 1-μm gate and Au-free ohmic contact.

关键词： AlGaN/GaN heterostructure ultrathin-barrier enhancement-mode radio-frequency power added efficiency silicon substrate

个人信息盗窃灰色产业链的技术手段与法律规制

在线全文

学校读者我要写书评

暂无评论

科技管理研究 2015年第24期35卷 171-176页

作者：何培育蒋启蒙重庆理工大学知识产权学院重庆400054

大数据时代个人信息由于蕴含巨大的商业价值近年来频遭犯罪分子大规模非法窃取,从而引发社会对于个人信息安全的普遍关注。个人信息盗窃手段花样繁多,例如恶意捆绑、WIFI钓鱼、路由器入侵、远程控制后门技术、木马病毒等黑客攻击技术,... 详细信息

大数据时代个人信息由于蕴含巨大的商业价值近年来频遭犯罪分子大规模非法窃取,从而引发社会对于个人信息安全的普遍关注。个人信息盗窃手段花样繁多,例如恶意捆绑、WIFI钓鱼、路由器入侵、远程控制后门技术、木马病毒等黑客攻击技术,以及各类社会工程学攻击技术。个人信息盗窃已经形成一条庞大、复杂的个人信息盗窃灰色产业链,造成了严重的社会影响。应当从个人信息盗窃产业链入手,明确产业链中不同的主体类型、行为方式,以现行法律法规为基础,对违法行为实施有效规制。

关键词：个人信息盗窃技术路径灰色产业链规制措施

大国竞争中的知识产权安全化及中国的政策选择

在线全文

学校读者我要写书评

暂无评论

外交评论（外交学院学报） 2022年第5期39卷 130-154,I0005页

作者：蒋启蒙朱雪忠同济大学上海国际知识产权学院上海200092

世界政治格局下大国竞争关系的转变促使知识产权以新型非传统安全的形式进入国家安全议程。在安全化理论下,知识产权安全是一种话语建构行为,知识产权安全化是通过话语策略将知识产权问题建构为国家生存威胁的过程,涉及知识产权信息流... 详细信息

世界政治格局下大国竞争关系的转变促使知识产权以新型非传统安全的形式进入国家安全议程。在安全化理论下,知识产权安全是一种话语建构行为,知识产权安全化是通过话语策略将知识产权问题建构为国家生存威胁的过程,涉及知识产权信息流动、知识产权权利转移和知识产权产品交易三类安全威胁行为。知识产权安全化始于知识产权与军事安全的融合,并随经济全球化与科技革命进程进入非传统安全领域,主要表现为大国经济竞争中的知识产权保护与大国科技竞争中的技术封锁问题。知识产权安全化机制包括在特定语境下塑造大国间知识产权敌对关系的身份话语建构,以及利用话语策略修饰知识产权风险的威胁话语建构。在当前中美竞争主导的大国竞争格局下,中国既应推进新型国际关系,及时解构美国知识产权安全威胁的话语策略,还需以发展与安全兼顾原则、宽严相济理念为指导,制定面向世界的中国知识产权安全政策。

关键词：大国竞争安全化理论知识产权安全化话语建构国家安全中美关系

Instability of parasitic capacitance in T-shape-gate enhancementmode AlGaN/GaN MIS-HEMTs

在线全文

学校读者我要写书评

暂无评论

Journal of Semiconductors 2022年第3期43卷 74-77页

作者： Lan Bi Yixu Yao qimeng jiang Sen Huang Xinhua Wang Hao Jin Xinyue Dai Zhengyuan Xu Jie Fan Haibo Yin Ke Wei Xinyu Liu High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Institute of Microelectronics University of Chinese Academy of SciencesBeijing 100049China

Parasitic capacitances associated with overhangs of the T-shape-gate enhancement-mode(E-mode)GaN-based power device,were investigated by frequency/voltage-dependent capacitance-voltage and inductive-load switching *** overhang capacitances induce a pinch-off voltage distinguished from that of the E-mode channel capacitance in the gate capacitance and the gatedrain capacitance characteristic ***-and voltage-dependent tests confirm the instability caused by the trapping of interface/bulk states in the LPCVD-SiNx passivation ***-level double pulse measurement also reveals its impact on switching transition for power switching applications.

关键词： AlGaN/GaN MIS-HEMTs enhancement-mode T-shape gate parasitic capacitance trapping/de-trapping capacitancevoltage hysteresis

Low-thermal-budget Au-free ohmic contact to an ultrathin barrier AlGaN/GaN heterostructure utilizing a micro-patterned ohmic recess

在线全文

学校读者我要写书评

暂无评论

Journal of Semiconductors 2021年第9期42卷 61-65页

作者： Wen Shi Sen Huang Xinhua Wang qimeng jiang Yixu Yao Lan Bi Yuchen Li Kexin Deng Jie Fan Haibo Yin Ke Wei Yankui Li Jingyuan Shi Haojie jiang Junfeng Li Xinyu Liu Key Laboratory of Microelectronic Devices&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Institute of Microelectronics University of Chinese Academy of SciencesBeijing 100049China

A pre-ohmic micro-patterned recess process,is utilized to fabricate Ti/Al/Ti/TiN ohmic contact to an ultrathin-barrier(UTB)AlGaN/GaN heterostructure,featuring a significantly reduced ohmic contact resistivity of 0.56Ω·mm at an alloy temperature of 550℃.The sheet resistances increase with the temperature following a power law with the index of +2.58,while the specific contact resistivity decreases with the *** contact mechanism can be well described by thermionic field emission(TFE).The extracted Schottky barrier height and electron concentration are 0.31 eV and 5.52×10^(18) cm^(−3),which suggests an intimate contact between ohmic metal and the UTB-AlGaN as well as GaN buffer.A good correlation between ohmic transfer length and the micro-pattern size is revealed,though in-depth investigation is needed.A preliminary CMOS-process-compatible metal-insulator-semiconductor high-mobility transistor(MIS-HEMT)was fabricated with the proposed Au-free ohmic contact technique.

关键词： ultrathin-barrier AlGaN/GaN heterostructure low thermal budget Au-free ohmic contact micro-patterned ohmic recess MIS-HEMTs transfer length

回归抑或超越:专利间接侵权与共同侵权理论之辨

在线全文

学校读者我要写书评

暂无评论

知识产权 2019年第5期29卷 46-57页

作者：何培育蒋启蒙重庆理工大学知识产权学院西南政法大学重庆理工大学"一带一路"知识产权与创新发展研究院

共同侵权理论与间接侵权制度是规制专利间接侵权的两种不同路径。域外主要国家在解决专利间接侵权问题时,大多经历了从共同侵权理论向间接侵权制度的转变。我国在进行制度选择与设计时,应理性考虑法律传统与司法现状,在适用共同侵权理... 详细信息

共同侵权理论与间接侵权制度是规制专利间接侵权的两种不同路径。域外主要国家在解决专利间接侵权问题时,大多经历了从共同侵权理论向间接侵权制度的转变。我国在进行制度选择与设计时,应理性考虑法律传统与司法现状,在适用共同侵权理论解决专利间接侵权问题时,应将视野扩张至广义共同侵权理论之上,对一般间接侵权情形可适用客观共同加害行为以及教唆或帮助行为,对不满足共同侵权构成要件的专利间接侵权特殊事由可将其法定化并直接追究间接侵权人的责任。

关键词：共同侵权专利间接侵权教唆或帮助诱导侵权辅助侵权

在线全文

学校读者我要写书评

暂无评论

技术锁定述评:知识框架与未来展望

科研管理 2023年第6期44卷 17-28页

作者：蒋启蒙朱雪忠滕子优同济大学上海国际知识产权学院上海200092

大国科技竞争中,外国对华技术锁定策略导致中国企业长期陷入技术被动逆向锁定状态,威胁知识产权领域国家安全。厘清技术锁定机制有助化解关键产业核心技术“卡脖子”危机。采用系统性文献综述法述评141篇技术锁定文献,分析技术锁定的研... 详细信息

大国科技竞争中,外国对华技术锁定策略导致中国企业长期陷入技术被动逆向锁定状态,威胁知识产权领域国家安全。厘清技术锁定机制有助化解关键产业核心技术“卡脖子”危机。采用系统性文献综述法述评141篇技术锁定文献,分析技术锁定的研究趋势、理论视角及研究方法,探索技术锁定的形成机制、创新效应和解锁路径以构建技术锁定知识框架。研究发现,技术锁定的形成主要涉及企业初始技术选择与自我强化两个阶段,初始技术选择存在外部偶然事件与内部战略行为两类情形,技术自我强化包括协调效应、规模效应、学习效应、预期效应四种子机制。技术锁定将负面影响企业创新并传导至区域或产业层面。提高研发投入水平、促进跨界技术搜索、优化研发合作结构是维持企业技术多样性并实现技术解锁的核心机制。最后,从理论视角、研究主题、研究方法三个维度提出未来研究方向。研究结论对厘清技术内部锁定与外部锁定关系、发展路径依赖理论并推进中国技术锁定本土化研究有边际贡献。

关键词：技术锁定路径依赖专利布局自我强化机制技术多样性