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检索条件"作者=Paolo Pavan"
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Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD
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Journal of Semiconductors 2024年 第3期45卷 45-52页
作者: NicolòZagni Manuel Fregolent Andrea Del Fiol Davide Favero Francesco Bergamin Giovanni Verzellesi Carlo De Santi Gaudenzio Meneghesso Enrico Zanoni Christian Huber Matteo Meneghini paolo pavan Department of Engineering“Enzo Ferrari” University of Modena and Reggio EmiliaModena 41125Italy Department of Information Engineering University of PadovaPadova 35131Italy Department of Sciences and Methods for Engineering(DISMI) University of Modena and Reggio EmiliaReggio Emilia 42122Italy EN&TECH Center University of Modena and Reggio EmiliaReggio Emilia 42122Italy Advanced Technologies and Micro Systems Department Robert Bosch GmbHRenningen 71272Germany
Vertical GaN power MOSFET is a novel technology that offers great potential for power switching *** still in an early development phase,vertical GaN devices are yet to be fully optimized and require careful studies to... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
I COLEOTTERI DITISCIDI DELLA PROVINCIA DI BRESCIA
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Natural Disaster Reduction in China 1978年 第1期 169-180页
作者: paolo MAZZOLDI Istitutodi Entomologia dell’Università di Pavia direttore Prof.Mario pavan:Centro Studi Naturalistici Bresciani.
L’*** un certo numero di Ditiscidi la cui presenza in provincia diBrescia è documentata,utilizzando sia ì dati reperibili in letteratura,siai risultati diricerchc che I’*** ha condotto in vari ambienti della provi... 详细信息
来源: 同方期刊数据库 同方期刊数据库 评论