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Energy & Environmental Materials 2024年第1期7卷 135-142页

作者： Bernhard Roling Vanessa Mi? Janosch kettner Department of Chemistry University of Marburg

In recent years,the interest in the development of highly concentrated electrolyte solutions for battery applications has increased *** electrolyte solutions are typically characterized by a low flammability,a high thermal and electrochemical stability and by the formation of a stable solid electrolyte interphase(SEI) in contact to electrode materials.

关键词： batteries concentrated electrolytes linear response theory Onsager formalism transport

半导体硅片键合:MEMS制造工序中的成熟技术(英文)

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电子工业专用设备 2007年第1期36卷 31-36页

作者： V.Dragoi p.Lindner H.Kirchberger p.kettner EV Group DI Erich Thallner Strasse 1A-4782 St.Florian /InnAustria EV Group DI Erich Thallner Strasse 1A-4782 St.Florian /Inn Austria

新型MEMS应用领域的发展为现有的制造技术带来了很大的挑战,并促使了满足新加工要求的制造能力的发展。根据目前MEMS制造中普遍采用的不同的晶圆键合方法及其主要工艺参数要求,开发了一种新型的晶圆键合技术。

关键词：硅片键合微机电系统制造工艺

生产验证的临时键合与解键合设备及技术(英文)

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电子工业专用设备 2005年第5期34卷 33-40页

作者： H.Kirchberger S.pargfrieder p.kettner C.Schaefer EV Group DIErichThallner Strasse1A-4780 SchaerdingAustriaEV GroupDIErichThallner Strasse1A-4780 SchaerdingAustriaEV GroupDIErichThallner Strasse1A-4780 SchaerdingAustriaEV GroupDIErichThallner Strasse1A-4780 SchaerdingAustria

化合物半导体材料的应用经历了稳定的增长,尤其是在光电子产业中更为典型。这些材料的应用要求在封装之前需将衬底减薄到100μm以下。由于这种材料的易碎性,需要某种支持方式来通过各种工序对衬底进行处理。半导体行业中建造这种支持最... 详细信息

化合物半导体材料的应用经历了稳定的增长,尤其是在光电子产业中更为典型。这些材料的应用要求在封装之前需将衬底减薄到100μm以下。由于这种材料的易碎性,需要某种支持方式来通过各种工序对衬底进行处理。半导体行业中建造这种支持最公认的方法是临时固定这种衬底材料到刚性载体基底上。介绍了一种用全自动方式固定和解固定这类衬底的技术。通过采用各种中间基底,包括热和紫外光释放的能够预先准备和薄片状的全自动化干式黏性膜。200mm直径的这种衬底可以以片盒到片盒的方式键合到晶圆平面的这种载体上。本工艺中选用了一种保护性涂层到衬底上。一旦这种衬底固定后,便可以完成随后的减薄、通孔印刷等工序。当这种衬底被减薄和背面处理之后,第二道加工便用于从载体上解键合该衬底,再次以片盒到片盒的方式将其固定到划版的薄膜或类似的载体上。

关键词：晶圆减薄临时键合解键合干式膜层压

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满足晶圆级封装微型化的曝光设备

电子工业专用设备 2005年第2期34卷 73-75页

作者： R.pelzer H.Luesebrink H.Kirchberger M.Wimplinger p.kettner A.Malzer 张平 EV Group DI Erich Thallner Strasse 1 A-4780 Schaerding Austria EV Group Inc 7700 South River Parkway Tempe AZ 85284 USA

在过去的几年中人们已经有几次预言由于受到物理限制单个晶片的尺寸不可能再缩小,但实际上芯片的尺寸还一直在缩小中.国际半导体技术蓝图(ITRS)预言在未来的10年中DRAM的密度将达到每芯片1011(G级集成).为了提高器件的性能,在未来的几年... 详细信息

在过去的几年中人们已经有几次预言由于受到物理限制单个晶片的尺寸不可能再缩小,但实际上芯片的尺寸还一直在缩小中.国际半导体技术蓝图(ITRS)预言在未来的10年中DRAM的密度将达到每芯片1011(G级集成).为了提高器件的性能,在未来的几年内CMOS电路的尺寸将进一步缩小而I/O密度将进一步提高.这会要求引线的间距缩小到20 μ m.晶圆级工艺技术,如微小间距晶圆凸点、引线盘重分布、无源集成等为很多应用提供了方便的解决方案.目前,许多IC和MEMS的器件已经应用了这些技术.通常高级封装技术涉及5～100 μm的厚胶工艺,如对表面有较大起伏的厚胶均匀曝光以及获得非常陡峭的厚胶侧壁.无缩放全场曝光系统是一种可以满足这种需求的设备解决方案.

关键词：晶圆级封装曝光设备晶片芯片 CMOS电路半导体技术尺寸缩小未来 DRAM

纳米压印光刻技术——下一代批量生产的光刻技术(英文)

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电子工业专用设备 2004年第7期33卷 3-9页

作者： R.pelzer p.Lindner T.Glinsner B.Vratzov C.Gourgon S.Landis p.kettner C.Schaefer EV Group DI Erich Thallner Strasse 1 A-4780 SchaerdingEV Group DI Erich Thallner Strasse 1 A-4780 SchaerdingEV Group DI Erich Thallner Strasse 1 A-4780 SchaerdingAMICA AMO GmbH Huysensweg 25 D-52074 AachenLaboratoire des Technologies de la Microelectronique-CNRS 17 R. des MartyrsF-38054 Grenoble CedexCEA-LETI17 R.des Martyrs F-38054 Grenoble CedexEV Group DI Erich Thallner Strasse 1 A-4780 SchaerdingEV Group DI Erich Thallner Strasse 1 A-4780 Schaerding

纳米压印光刻技术已被证实是纳米尺寸大面积结构复制的最有前途的下一代技术之一。这种速度快、成本低的方法成为生物化学、μ级流化学、μ-TAS和通信器件制造以及纳米尺寸范围内广泛应用的一种日渐重要的方法,如生物医学、纳米流体学... 详细信息

纳米压印光刻技术已被证实是纳米尺寸大面积结构复制的最有前途的下一代技术之一。这种速度快、成本低的方法成为生物化学、μ级流化学、μ-TAS和通信器件制造以及纳米尺寸范围内广泛应用的一种日渐重要的方法,如生物医学、纳米流体学、纳米光学应用、数据存储等领域。由于标准光刻系统的波长限制、巨大的开发工作量、以及高昂的工艺和设备成本,纳米压印光刻技术可能成为主流IC产业中一种真正富有竞争性方法。对细小到亚10nm范围内的极小复制结构,纳米压印技术没有物理极限。从几种纳米压印光刻技术中选择两种前景广阔的方法——热压印光刻(HEL)和紫外压印光刻(UV-NIL)技术给予介绍。两种技术对各种各样的材料以及全部作图的衬底大批量生产提供了快速印制。重点介绍了HEL和UV-NIL两种技术的结果。全片压印尺寸达200mm直径,图形分辨力高,拓展到纳米尺寸范围。

关键词：纳米压印技术热压印紫外压印电铸光刻

Classifying Electrolyte Solutions by Comparing Charge and Mass Transport

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Energy & Environmental Materials 2022年第1期5卷 6-9页

作者： Bernhard Roling Janosch kettner Vanessa Miß Department of Chemistry and Center for Materials Science(WZMW) University of MarburgHans-Meerwein-Strasse 4Marburg 35032Germany

The conventional classification of electrolyte solutions as“strong”or“weak”accounts for their charge transport properties,but neglects their mass transport properties,and is not readily applicable to highly concentrated ***,we use the Onsager transport formalism in combination with linear response theory to attain a more general classification taking into account both charge and mass transport *** this end,we define a molar mass transport coefficientΛ_(mass),which is related to equilibrium center-of-mass fluctuations of the mobile ions and which is the masstransport analogue of the molar ionic conductivityΛ_(charge).Three classes of electrolyte solution are then distinguished:(i)“Strong electrolytes”with 4Λ_(mass)≈Λ_(charge);(ii)“weak charge transport electrolytes”withΛ_(charge)≪4Λ_(mass);and(iii)“weak mass transport electrolytes”with 4Λ_(mass)≪Λ_(charge).While classes(i)and(ii)encompass the classical“strong”and“weak”electrolytes,respectively,many highly concentrated electrolytes fall into class(iii)and thus exhibit transport properties clearly distinct from classical strong and weak electrolytes.

关键词： charge and mass transport superconcentrated electrolytes energy storage Ion correlations

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

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半导体技术 2004年第7期29卷 86-91页

作者： R. pelzer p. Lindner T. Glinsner B.Vratzov C.Gourgon S.Landis p. kettner C. Schaefer EV Group DI Erich Thallner Strasse 1 A-4780 SchaerdingEV Group DI Erich Thallner Strasse 1 A-4780 SchaerdingEV Group DI Erich Thallner Strasse 1 A-4780 SchaerdingAMICA AMO GmbH Huysensweg 25 D-52074 AachenLaboratoire des Technologies de la Microelectronique CNRS 17 R. des MartyrsF- 3805Grenoble Cedex4CEA-LETI 17 R. des Martyrs F- 38054 Grenoble CedexEV Group DI Erich Thallner Strasse 1 A-4780 SchaerdingEV Group DI Erich Thallner Strasse 1 A-4780 Schaerding

Nanoimprint Lithography has been demon-strated to be one of the most promising next genera-tion techniques for large-area structure replicationin the nanometer scale. This fast and low costmethod becomes an increasingly important instru-ment for fabrication of biochemistry,m-fluidic, m-TAS and telecommunication devices, as well as for awide variety of fields in the nm range, like biomedical,nano-fluidics,nano-optical applications, datastorage, *** to the restrictions on wavelength and theenormous development works, linked to high pro-cess and equipment costs on standard lithographysystems, nanoimprint lithography might become areal competitive method in mainstream IC *** are no physical limitations encountered withimprinting techniques for much smaller replicatedstructures, down to the sub-10nm range [1]. Amongseveral Nanoimprint lithography techniques resultsof two promising methods, hot embossing lithogra-phy (HEL) and UV-nanoimprinting (UV-NIL) will bepresented. Both techniques allow rapid prototypingas well as high volume production of fully patternedsubstrates for a wide range of *** paper will present results on HE and UV-NIL, among them full wafer imprints up to 200mmwith high-resolution patterns down to nm range.

关键词：光刻 HEL UV-NIL MCp 光对准

A new academic impact metric for evaluating geographic simulation models

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International Journal of Digital Earth 2022年第1期15卷 1855-1880页

作者： Kai Xu Min Chen Albert J.kettner C.Michael Barton Barry F.W.Croke Anthony J.Jakeman Daniel p.Ames Hsiao-Hsuan Wang Susan M.Cuddy Songshan Yue Yongning Wen Fengyuan Zhang Yixuan Zhang Guonian Lü Key Laboratory of Virtual Geographic Environment (Ministry of Education of pRC) Nanjing Normal UniversityNanjingJiangsuPeople’s Republic of China Jiangsu Center for Collaborative Innovation in Geographical Information Resource Development and Application NanjingJiangsuPeople’s Republic of China State Key Laboratory Cultivation Base of Geographical Environment Evolution(Jiangsu province) NanjingJiangsuPeople’s Republic of China Community Surface Dynamics Modelling System (CSDMS) Institute of Arctic and Alpine Research (INSTAAR)University of ColoradoBoulderCOUSA School of Human Evolution and Social Change Arizona State UniversityTempeAZUSA School of Complex Adaptive Systems Arizona State UniversityTempeAZUSA Institute for Water Futures Fenner School of Environment and SocietyAustralian National UniversityCanberraAustralia Mathematical Sciences Institute The Australian National UniversityCanberraAustralia Department of Civil and Construction Engineering Brigham Young UniversityProvoUTUSA Ecological Systems Laboratory Department of Ecology and Conservation BiologyTexas A&M UniversityCollege StationTXUSA CSIRO Land and Water CanberraAustralia

Geographic simulation models can be used to explore and better understand the geographical environment. Recent advances in geographic and socio-environmental research have led to a dramatic increase in the number of models used for this purpose. Some model repositories provide opportunities for users to explore and apply models,but few provide a general evaluation method for assessing the applicability and recognition of models. In this study,an academic impact evaluation method for models is proposed. Five indices are designed based on their pertinence. The analytical hierarchy process is used to calculate the index weights,and the academic impacts of models are quantified with the weighted sum method. The time range is controlled to evaluate the life-term and annual academic impacts of the models. Some models that met the evaluation criteria from different domains are then evaluated. The results show that the academic impact of a model can be quantified with the proposed method,and the major research areas that models impact are identified.

关键词： Geographic simulation model academic impact analytic hierarchy process model impact evaluation