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检索条件"作者=Oleksandr Voznyy"
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Realizing ultra-pure red emission with Sn-based lead-free perovskites
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Rare Metals 2020年 第4期39卷 330-331页
作者: oleksandr voznyy Department of Physical and Environmental Sciences University of Toronto ScarboroughScarboroughON MIC 1A4Canada
Light-emitting diodes(LEDs)are key for the development of next-generation displays for ultra-high-definition *** materials beyond organic LEDs are required to meet the color purity standards,while retaining low proces... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Interpretable discovery of semiconductors with machine learning
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npj Computational Materials 2023年 第1期9卷 1150-1160页
作者: Hitarth Choubisa Petar Todorović Joao M.Pina Darshan H.Parmar Ziliang Li oleksandr voznyy Isaac Tamblyn Edward H.Sargent Department of Electrical and Computer Engineering University of Toronto10 King’s College RoadTorontoON M5S 3G4Canada Department of Physical and Environmental Sciences University of TorontoScarboroughON M1C 1A4Canada Department of Physics University of OttawaOttawaON K1N 6N5Canada Vector Institute for Artificial Intelligence TorontoON M5G 1M1Canada
Machine learning models of material properties accelerate materials discovery,reproducing density functional theory calculated results at a fraction of the cost1–*** bridge the gap between theory and experiments,mach... 详细信息
来源: 维普期刊数据库 维普期刊数据库 评论
Electronic and optical properties of semiconductor and graphene quantum dots
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Frontiers of physics 2012年 第3期7卷 328-352页
作者: Wei-dong Sheng Marek Korkusinski Alev Devrim Güçlü Michal Zielinski Pawel Potasz Eugene S.Kadantsev oleksandr voznyy Pawel Hawrylak Institute of Microstructural Sciences National Research Council of CanadaOttawaCanada Department of Physics Fudan UniversityShanghai 200433China Institute of Physics Nicalaus Copernicus University TorunPoland Institute of Physics Wroclaw University of TechnologyWroclawPoland
Our recent work on the electronic and optical properties of semiconductor and graphene quan- tum dots is reviewed. For strained self-assembled InAs quantum dots on GaAs or InP substrate atomic positions and strain dis... 详细信息
来源: 维普期刊数据库 维普期刊数据库 评论