Electronic and optical properties of semiconductor and graphene quantum dots
Electronic and optical properties of semiconductor and graphene quantum dots作者机构:Institute of Microstructural SciencesNational Research Council of CanadaOttawaCanada Department of PhysicsFudan UniversityShanghai 200433China Institute of PhysicsNicalaus Copernicus University TorunPoland Institute of PhysicsWroclaw University of TechnologyWroclawPoland
出 版 物:《Frontiers of physics》 (物理学前沿(英文版))
年 卷 期:2012年第7卷第3期
页 面:328-352页
核心收录:
学科分类:080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术(可授工学、理学学位)] 07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学] 0702[理学-物理学]
基 金:国家自然科学基金
主 题:quantum dots electronic structure multiexciton graphene magnetism
摘 要:Our recent work on the electronic and optical properties of semiconductor and graphene quan- tum dots is reviewed. For strained self-assembled InAs quantum dots on GaAs or InP substrate atomic positions and strain distribution are described using valence-force field approach and con- tinuous elasticity theory. The strain is coupled with the effective mass, k ~ p, effective bond-orbital and atomistic tight-binding models for the description of the conduction and valence band states. The single-particle states are used as input to the calculation of optical properties, with electron- electron interactions included via configuration interaction (CI) method. This methodology is used to describe multiexciton complexes in quantum dot lasers, and in particular the hidden symmetry as the underlying principle of multiexciton energy levels, manipulating emission from biexcitons for entangled photon pairs, and optical control and detection of electron spins using gates. The self-assembled quantum dots are compared with graphene quantum dots, one carbon atom-thick nanostructures. It is shown that the control of size, shape and character of the edge of graphene dots allows to manipulate simultaneously the electronic, optical, and magnetic properties in a single material system.