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Future Applications of GaN Electron Devices

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半导体技术 2008年第S1期33卷 72-74,79页

作者： ohno yasuo Institute of Technology and Science the University of Tokushima

0 Introduction Fifteen years have passed since the first AlGaN/GaN HFET was reported in *** FETs have already commercialized as microwave power devices,but volume production has not yet *** main application field is mobile phone base *** such applications,GaAs power transistors and silicon LDMOS have already been ***,advantages compared with these existing devices will be required,such as high efficiency,low distortion,low noise,high reliability and,especially,low ***,the latter two items are normally difficult for devices using new materials.

关键词： GaN In Future Applications of GaN Electron Devices

Future Applications of GaN Electron Devices

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Future Applications of GaN Electron Devices

Refractory Metal Nitride Schottky Contact on GaN

第十五届全国化合物半导体材料，微波器件和光电器件学术会议

作者： ohno yasuo Institute of Technology and Science the University of Tokushima

0 Introduction Fifteen years have passed since the first A1 GaN/GaN HFET was reported in *** FETs have already commercialized as microwave power devices,but volume production has not yet *** main application field is ... 详细信息

关键词： GaN Future Applications of GaN Electron Devices

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Refractory Metal Nitride Schottky Contact on GaN

利用ISSR标记进行菜用大豆和普通大豆的分类

第十五届全国化合物半导体材料，微波器件和光电器件学术会议

作者： ohno yasuo Institute of Technology and Science the University of Tokushima

For thermally stable or high-temperature operating,Schottky contact utilizing refractory metal nitride,TiN,MoN and ZrN,on n-GaN were *** refractory metal nitride films were formed by reactive sputtering in Ar and N ***-voltage characteristics show that ideality factors of 1.09 - 1.22 and barrier heights of 0.66 - 0.75 eV was obtained for the three metal *** the ZrN contact,the ideality factor and barrier height of became 1.06 and 0.77 eV,respectively,after 800℃***/GaN heterostructure FET with TiN gate was also *** obvious degradation was found for the TiN-gate device even after thermal treatment at 850℃.This shows that Schottky contact utilizing refractory metal nitride on GaN has the potential for thermal stability or high-temperature operating.

关键词： refractory metal nitride GaN Schottky contact Schottky diode

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大豆科学 2008年第5期27卷 732-739页

作者：谢甫绨 Takahata Yoshihito ohno yasuo 沈阳农业大学农学院辽宁沈阳110161 Faculty of Agriculture lwate University020-8550Japan Sato Masayuki Seed Co. Yahabacho 02-0891Japan

ISSR标记技术因具有很高的多肽性而被广泛应用于遗传多样性研究。进行菜用大豆品种多样性研究将有助于育种家进行杂交亲本的合理选配。采用ISSR标记技术对37个菜用大豆品种（系）和13个普通大豆品种（系）进行了分类研究。结果表明：50... 详细信息

ISSR标记技术因具有很高的多肽性而被广泛应用于遗传多样性研究。进行菜用大豆品种多样性研究将有助于育种家进行杂交亲本的合理选配。采用ISSR标记技术对37个菜用大豆品种（系）和13个普通大豆品种（系）进行了分类研究。结果表明：50个ISSR引物中有11个引物没有多肽性，其他39个引物共产生132条谱带，其中81条多肽性谱带，占61．4％。引物扩增的谱带数在1—7条之间，大小为830—3530bp．每个引物平均扩增的谱带数和多肽性带数分别为3．3和2．1。聚类分析结果表明，可将供试的50个品种划分为3个类组，扁茎大豆Taikadaizu单独一组，7个普通大豆（多数为中国选育）划归为B组，C组由日本菜用大豆和4个普通大豆组成。C组还可以划分成若干亚组，同一亚组的品种具有相似的性状，比如有一亚组的品种均是褐脐、茶色种皮、白花、不易炸荚。系选的品种和原始品种在分类图中也显示出其密切的亲缘关系。基于ISSR标记的分类可以反映菜用大豆的遗传关系，菜用大豆和普通大豆之间存在遗传多样性，合理保存菜用大豆种质将有助于未来大豆品质改良计划。

关键词：大豆 ISSR标记多样性

Numerical Simulation on Inclusion and Bubble Entrapment in Solidified Shell in Model Experiment and in Mold of Continuous Caster With DC Magnetic Field

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Journal of Iron and Steel Research International 2012年第S2期19卷 853-857页

作者： Yuji Miki Hiroyuki ohno yasuo Kishimoto Kohei Furumai Shinya Tanaka Steel Research Labs JFE Steel Corp JFE Systems Corp

A model experiment investigating entrapment of inclusions and bubbles on the solidified shell was performed using molten steel,and the conditions for inclusion and bubble entrapment and mechanism of entrapment were studied. The results were applied to the flow behavior in the casting mold of a continuous *** the solid-liquid interface, entrapment of inclusions is greatly reduced by the existence of a low velocity flow,e.g.,0.05m/*** above-mentioned interfacial flow velocity dependency of inclusion entrapment is considered to be largely influenced by changes in the thickness of the concentration boundary layer,which depend on the interfacial flow ***,bubbles and inclusions which enter the concentration boundary layer are drawn to the solid-liquid interface by a suction force which is several orders larger than the Saffman's *** addition to the above-mentioned suction force,the so-called cleaning effect is determined by fluid-dynamic forces such as drag force,*** act on particles,and furthermore,by resident time of particles at the solid-liquid interface,which depends on the solidification *** a FC mold with a 2-stage electromagnetic brake,flotation of bubbles entrained in the jet flow from the nozzle is accelerated with the large DC magnetic *** is attributed to the braking effect of the DC field on the nozzle jet and the upward flow by the buoyancy of the *** a result,the interfacial flow velocity can be normalized by increasing the strength of the magnetic field,and entrapment of large bubbles and inclusions can be reduced.

关键词： continuous casting mold molten steel numerical simulation flow solidified shell surface defect inclusion bubble entrapment interfacial tension electromagnetic field