咨询与建议

看过本文的还看了

相关文献

该作者的其他文献

文献详情 >Future Applications of GaN Ele... 收藏

Future Applications of GaN Electron Devices

Future Applications of GaN Electron Devices

作     者:Ohno Yasuo 

作者机构:Institute of Technology and Sciencethe University of Tokushima 

出 版 物:《半导体技术》 (Semiconductor Technology)

年 卷 期:2008年第33卷第S1期

页      面:72-74,79页

学科分类:080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术(可授工学、理学学位)] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学] 

主  题:GaN In Future Applications of GaN Electron Devices 

摘      要:0 Introduction Fifteen years have passed since the first AlGaN/GaN HFET was reported in *** FETs have already commercialized as microwave power devices,but volume production has not yet *** main application field is mobile phone base *** such applications,GaAs power transistors and silicon LDMOS have already been ***,advantages compared with these existing devices will be required,such as high efficiency,low distortion,low noise,high reliability and,especially,low ***,the latter two items are normally difficult for devices using new materials.

读者评论 与其他读者分享你的观点

用户名:未登录
我的评分