Future Applications of GaN Electron Devices
Future Applications of GaN Electron Devices作者机构:Institute of Technology and Sciencethe University of Tokushima
出 版 物:《半导体技术》 (Semiconductor Technology)
年 卷 期:2008年第33卷第S1期
页 面:72-74,79页
学科分类:080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术(可授工学、理学学位)] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学]
主 题:GaN In Future Applications of GaN Electron Devices
摘 要:0 Introduction Fifteen years have passed since the first AlGaN/GaN HFET was reported in *** FETs have already commercialized as microwave power devices,but volume production has not yet *** main application field is mobile phone base *** such applications,GaAs power transistors and silicon LDMOS have already been ***,advantages compared with these existing devices will be required,such as high efficiency,low distortion,low noise,high reliability and,especially,low ***,the latter two items are normally difficult for devices using new materials.