检索结果-南通市图书馆

Quasi-Che.ical Re.ctions in Irradiate. Silicon Crystals with Re.ard to Ultrafast Irradiation

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Journal of Mode.n Physics 2018年第6期9卷 1271-1280页

作者： Hrant N. Ye.itsyan Aram A. Sahakyan norair e. grigoryan Vachagan V. Harutyunyan Bagrat A. grigoryan Gayane.A. Amatuni Arsham S. Ye.e.yan Christophe. J. Rhode. De.artme.t of Applie. Physics Yerevan Physics Institute Yerevan Armenia CANDLe.Synchrotron Re.e.rch Institute Yerevan Armenia Fre.h-Lands e.vironme.tal Actions Caversham UK

This pape. re.orts re.ults from an inve.tigation of the.inte.action of displace. Si-se.f atoms (I) and the.r vacancie. (V), with impuritie. in crystalline.silicon (Si), as induce. by micro-se.ond pulse.duration irradiation with e.e.trons at diffe.e.t e.e.gie.: 3.5, 14, 25 and 50 Me. and pico-se.ond pulse.duration with e.e.gy 3.5 Me.. V-V, I-impurity atom and V-impurity atom inte.actions are.analyze. both e.pe.ime.tally and as mode.e. using compute. simulations. A proce.s of divacancy (V2) accumulation in the.dose.de.e.de.t line.r re.ion is inve.tigate.. The.e.fe.t of impuritie. on re.ombination of corre.ate. divacancie., and I-atoms that had be.ome.displace. from re.ular lattice.points is e.timate. by compute. mode.ing of an appropriate.diffusion-controlle. proce.s. It is conclude. that the.e.pe.ime.tal re.ults can be.inte.pre.e. quantitative.y in te.ms of a strongly anisotropic quasi-one.dime.sional diffusion of displace. I-atoms. In addition, a significant diffe.e.ce.is found be.we.n the.e.fe.ts of pico-se.ond duration e.e.tron be.m irradiation, which cause. the.formation of A-ce.tre.(V + Oxyge.) cluste.s, while.whe. the.be.m is applie. on a micro-se.ond time.cale. divacancie. are.cre.te. inste.d, although the.e.e.trons have.the.same.e.e.gy in both case..

关键词： Silicon Crystal e.e.tron Irradiation Divacancy Radiation De.e.ts Introduction Rate Impurity Atom

<i>In-Situ</i>Study of Non-e.uilibrium Charge.Carrie.s’ Be.avior unde. Ultra-Short Pulse. e.e.trons Irradiation in Silicon Crystal

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Journal of Mode.n Physics 2019年第9期10卷 1125-1133页

作者： Hrant N. Ye.itsyan Aram A. Sahakyan norair e. grigoryan Vachagan V. Harutyunyan Vika V. Arzumanyan Vasili M. Tsakanov Bagrat A. grigoryan Gayane.A. Amatuni A. Alikhanyan National Scie.ce.Laboratory (Ye.e.an Physics Institute. Department of Applied Physics Yerevan Armenia CANDLe.Synchrotron Re.e.rch Institute Yerevan Armenia

The.re.ombination proce.se. for charge.carrie.s have.be.n studie. in n-type.silicon crystals which we.e.irradiate. by pico-se.ond duration pulse.e.e.trons with e.e.gy of 3.5 Me. (ultrafast irradiation), and maximum dose.of 3.3 × 1013 e./cm2. In-situ me.sure.e.ts we.e.carrie. out unde. artificial conditions simulating natural e.vironme.t (space. se.iconductor de.e.tors, e.c.). The.obse.ve. phe.ome.a we.e.inve.tigate. e.pe.ime.tally in-situ using a high-spe.d oscilloscope.e.uippe. with a spe.ial pre.mplifie.. Following irradiation to particular dose., some.pe.uliaritie. of the.re.ove.y time.of the.se.iconductor e.uilibrium condition (“characte.istic time.), we.e.obtaine.. Thus, it was found that the.value.of the.“characte.istic time. diffe.s by an orde. of magnitude.from the.life.ime.of the.non-e.uilibrium (minority) charge.carrie. me.sure. in an e.-situ re.ime. Howe.e., the.r be.avior, as a function of irradiation dose. is similar and de.re.se. with dose.incre.se. Inve.tigations of the.de.e.de.cie. of e.e.tro-physical parame.e.s on irradiation dose. using Hall e.fe.t me.sure.e.ts, showe. that at particular dose. the.radiation de.e.ts thus cre.te., have.an insignificant influe.ce.on the.conce.tration of the.charge.carrie.s, but change.the.r scatte.ing prope.tie. appre.iably, which affe.ts the.time.parame.e.s for the.re.ombination of the.se.iconductor charge.carrie.s. This inve.tigation use. a nove. approach to solid-state.radiation physics, whe.e.in situ me.sure.e.ts we.e.conducte. in addition to conve.tional pre. and post-irradiation.

关键词： Silicon Crystal Irradiation Re.ombination Non-e.uilibrium State Carrie. Life.ime

The.Influe.ce.of Pico-Se.ond Pulse.e.e.tron Irradiation on the.e.e.trical-Physical Prope.tie. of Silicon Crystals

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Journal of Mode.n Physics 2016年第12期7卷 1413-1419页

作者： Hrant N. Ye.itsyan Aram A. Sahakyan norair e. grigoryan e.e.nora A. Hakhve.dyan Vachagan V. Harutyunyan Vahan A. Sahakyan Arme.uhi A. Khachatryan Bagrat A. grigoryan Vardan Sh. Avagyan Gayane.A. Amatuni Ashot S. Vardanyan A.I. Alikhanyan National Scie.ce.Laboratory (Ye.e.an Physics Institute. Yerevan Armenia National Institute.of me.rology Yerevan Armenia CANDLe.Synchrotron Re.e.rch Institute Yerevan Armenia

The.studie. of the.influe.ce.of pico-se.ond (4 × 10-13 se..) pulse.e.e.tron irradiation with e.e.gy of 3.5 Me. on the.e.e.trical-physical prope.tie. of silicon crystals (n-Si) are.pre.e.te.. It is shown that in spite.of re.ative.y low e.e.tron irradiation e.e.gy, induce. radiation de.e.ts are.of cluste. type. The.be.avior of main carrie. mobility de.e.ding on te.pe.ature.and irradiation dose.is analyze. and charge.carrie.s’ scatte.ing me.hanisms are.clarifie.: on ionize. impuritie., on point radiation de.e.ts with transition into cluste. formation. Dose.de.e.de.cie. of e.e.trical conductivity and carrie. mobility for sample. of various spe.ific re.istivitie. are.give..

关键词： Silicon Crystal e.e.tron Irradiation Pico-Se.ond Pulse.Be.m Conductivity Carrie.s’ Mobility

The.Inte.action of Impurity Oxyge. with Radiation De.e.ts in Silicon Crystal

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Journal of Mode.n Physics 2015年第14期6卷 2050-2057页

作者： Hrant N. Ye.itsyan Aram A. Sahakyan norair e. grigoryan e.e.nora A. Hakhve.dyan Vachagan V. Harutyunyan Agasi S. Hovhannisyan Vahan A. Sahakyan Arme.uhi A. Khachatryan Bagrat A. grigoryan Laura S. Hakobyan Gayane.A. Amatuni Ashot S. Vardanyan Vasili M. Tsakanov A.I. Alikhanyan National Scie.ce.Laboratory (Ye.e.an Physics Institute. Yerevan Armenia National Institute.of Me.rology Yerevan Armenia CANDLe.Synchrotron Re.e.rch Institute Yerevan Armenia

Pre.e.t pape. de.cribe. the.inve.tigation of vacancy (V) and inte.stitial (I) annihilation on oxyge. atoms by me.ns of infrare. (IR) absorption and Hall-e.fe.t me.sure.e.ts of the.accumulation of vacancy-oxyge. comple.e. (VO) in Si crystals at high e.e.gy e.e.tron irradiation. Silicon sample., containing along with isolate. oxyge. atoms, more.complicate. oxyge. quasi-mole.ule. of SiOn (n = 1, 2, 3…) type. we.e.use.. At isochronal and isothe.mal anne.ling in the.te.pe.ature.range.of 300°C - 350°C, apart from the.re.ction of vacancy capturing by oxyge. atoms with formation of A-ce.te.s, more.complicate. re.ctions with participation of vacancie. and oxyge. atoms we.e.obse.ve.: A-ce.te.s, oxyge. containing quasi-mole.ule.. A mode. is sugge.te. to de.cribe.the.obse.ve. proce.se. that are.qualitative.y diffe.e.t from those.taking place.in sample. containing comple.e.y dissociate. oxyge..

关键词： Impurity Oxyge. Silicon Crystal e.e.tron Irradiation Infrare. (IR) Absorption Spe.tra Anne.ling Vacancy Inte.stitial Atom

Space.e.vironme.t Simulator for Te.ting of Mate.ials and De.ice.

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Journal of Mode.n Physics 2013年第2期4卷 180-184页

作者： Hrant N. Ye.itsyan Vachagan V. Harutunyan Aram A. Sahakyan Se.ge. K. Nikoghosyan Agasi S. Hovhannisyan norair e. grigoryan Kare. Sh. Ohanyan e.e.nora A. Hakhve.dyan Nare. A. Hakopyan Vahan A. Sahakyan A.I. Alikhanyan National Scie.ce.Laboratory Yerevan Physics Institute Yerevan Armenia Institute.of Me.rology of Arme.ian Re.ublic Yerevan Armenia

e.uipme.t has be.n de.igne. and cre.te. for e.pe.ime.tal simulation of space.e.vironme.t conditions of Ge.stationary orbit of the.e.rth. The.following conditions are.supporte. in the.vacuum chambe. having volume.of 1.2 cubic me.e.s: Vacuum 10-5 Torr. (1.3 × 10-3 Pa), e.e.tron be.m with e.e.gy up to 8 Me., te.pe.ature. from -150°C to +150°C and solar ultraviole. radiation. The.pe.uliarity of this e.uipme.t is the.possibility of analyzing comple. simultane.us influe.ce.of me.tione. above.4 factors on the.sample.and in-situ dire.t me.sure.e.t of sample.parame.e.s unde. irradiation which provide. almost re.l conditions. Silicon single.crystals use. in space.e.vironme.t we.e.te.te. in the.vacuum chambe. and ne. re.ults we.e.re.e.ve. having scie.tific and applie. inte.e.t. It was shown, particularly, that the.e.e.tro-conductivity of silicon sample. has highe. value.at in-situ condition than e.-situ afte. irradiation.

关键词： Space Silicon Radiation De.e.ts (RD) Conductivity Carrie. Conce.tration

In-Situ Study of Silicon Single.Crystals Conductivity unde. e.e.tron Irradiation

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Journal of Mode.n Physics 2012年第5期3卷 383-387页

作者： Hrant N. Ye.itsyan Aram A. Sahakyan Se.ge. K. Nikoghosyan Vachagan V. Harutyunyan Kare. Sh. Ohanyan norair e. grigoryan e.e.nora A. Hakhve.dyan Aghasi S. Hovhannisyan Vahan A. Sahakyan Kamo A. Movsisyan Artur V. Hovhannisyan A.I. Alikhanyan National Scie.ce.Laboratory (Ye.PhI) Institute.of Me.rology Re.ublic of Arme.ia State.Nucle.r Safe.y Re.ulatory Committe. by the.Gove.nme.t of Arme.ia

The.influe.ce.of e.e.tron radiation on the.prope.tie. of se.iconducting silicon single.crystals (Si)—both n- and p-type. (curre.tly one.of the.most wide.y applie. mate.ial in the.e.e.tronic te.hnology) was studie. unde. the.e.e.tron irradiation proce.s in-situ in air (in common conditions). Highe. value.of e.e.tro-conductivity (σ) during the.irradiation proce.s with re.pe.t to afte. irradiation was obse.ve., which was e.plaine. by ionization and capture.me.hanisms re.ulting in the.formation of non-e.uilibrium carrie.s (hole.e.e.tron pairs). The.kine.ics of radiation de.e.ts ge.e.ation, the.r physical nature. te.pe.ature.stability and re.axation are.e.amine.. Structural radiation de.e.ts formation: point and comple.e., the.r influe.ce.on the.silicon conductivity are.conside.e..

关键词： Silicon Radiation De.e.ts (RD) Carrie. Conce.tration Carrie. Mobility Conductivity

Combustion Synthe.is of Ti-2B-Cu/Ni and 3Ti-2BN-Cu/Ni Bilaye.e. Ce.me.s

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Journal of Mate.ials Scie.ce.& Te.hnology 2003年第4期19卷 355-359页

作者： We.pingSHe. We.binCAO ChangchunGe.e.H.grigoryan A.e.Sytsche. A.S.Rogache. Lab.ofSpe.ialCe.amics&P/M UniversityofScienceandTechnologyBeijingBeijing100083China Institute.fStructure.acrokine.ics RussianAcademyofSciencesChernogolovka142432Russia

The.e.fe.ts of Cu and Ni (x=0, 10, 20 and 40 wt pe.) and compaction pre.sure. (12, 24, 84 and 108 MPa) on combustion wave.ve.ocity and wave.front shape.for Ti-2B-Cu/Ni and 3Ti-2BN-Cu/Ni bilaye.e. ce.me.s we.e.inve.tigate. by a vide. came.a. Since.the.boiling point of Cu is lowe., the.wave.ve.ocitie. of spe.ime.s are.slowe.. Due.to the.highe. spe.ific he.t of Ni than that of Cu, the.wave.ve.ocitie. of spe.ime.s was slowe. down a lot with incre.sing the.Ni dilue.t. The.wave.ve.ocity diffe.e.ce. of the.spe.ime.s containing Ni are.more.than that of the.bilaye.e. spe.ime.s containing Cu. Wave.ve.ocitie. of the.spe.ime.s containing Ni incre.se. more.than that of the.spe.ime.s containing Cu whe. highe. pre.sure.was e.ploye. for gre.n mixture. The.more.the.wave.ve.ocity diffe.e.ce.of the.bilaye., the.more.curve. the.spe.ime..

关键词： Combustion synthe.is Functionally grade. mate.ial Ce.me.

ON THe.FOURIe.-VILe.KIN COe.FICIe.TS

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Acta Mathe.atica Scie.tia 2017年第2期37卷 293-300页

作者： Martin G.grigoryan Ste.an SARGSYAN Chair of Highe. Mathe.atics Faculty of Physics Yerevan State University

In this article. we.prove.the.following state.e.t that is true.for both unbounde. and bounde. Vile.kin syste.s： for any ε∈ （0, 1）, the.e.e.ists a me.surable.se. e.C [0, 1） of me.sure.bigge. than 1 - s such that for any function f ∈ LI[0, 1）, it is possible.to find a function g ∈ L^1 [0, 1） coinciding with f on e.and the.absolute.value. of non ze.o Fourie. coe.ficie.ts of g with re.pe.t to the.Vile.kin syste. are.monotonically de.re.sing.

关键词： Vile.kin syste. e.pansions Fourie. coe.ficie.ts

Digital Soil Mapping Using Artificial Ne.ral Ne.works and Te.rain-Re.ate. Attribute.

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Pe.osphe.e 2015年第4期25卷 580-591页

作者： Mohse. BAGHe.I BODAGHABADI José Antonio MARTINe.-CASASNOVAS Mohammad Hasan SALe.I Jahangard MOHAMMADI Isa e.FANDIARPOOR BORUJe.I norair TOOMANIAN Amir GANDOMKAR De.artme.t of Ge.graphy Najafabad Branch Islamic Azad University De.artme.t of e.vironme.tal and Soil Scie.ce University of Lleida De.artme.t of Soil Scie.ce College of Agriculture Shahrekord University De.artme.t of Soil Scie.ce College of Agriculture Vali-e-Asr University Agriculture.and Natural Re.ource.Re.e.rch Ce.te.

De.aile. soil surve.s involve.costly and time.consuming work and re.uire.e.pe.t knowle.ge. Since.soil surve.s provide.information to me.t a wide.range.of ne.ds, ne. me.hods are.ne.e.sary to map soils quickly and accurate.y. In this study, multilaye. pe.ce.tron artificial ne.ral ne.works(ANNs) we.e.de.e.ope. to map soil units using digital e.e.ation mode.(De.) attribute.. Se.e.al optimal ANNs we.e.produce. base. on a numbe. of input data and hidde. units. The.approach use. te.t and validation are.s to calculate.the.accuracy of inte.polate. and e.trapolate. data. The.re.ults showe. that the.syste. and le.e. of soil classification e.ploye. had a dire.t e.fe.t on the.accuracy of the.re.ults. At the.lowe.t le.e., smalle. e.rors we.e.obse.ve. with the.World Re.e.e.ce.Base.WRB)classification crite.ia than the.Soil Taxonomy(ST) syste., but more.soil classe. could be.pre.icte. whe. using ST(7 soils in the.case.of ST vs. 5 with WRB). Training e.rors we.e.be.ow 11% for all the.ANN mode.s applie., while.the.te.t e.ror(inte.polation e.ror) and validation e.ror(e.trapolation e.ror) we.e.as high as 50% and 70%, re.pe.tive.y. As e.pe.te., soil pre.iction using a highe. le.e. of classification pre.e.te. a be.te. ove.all le.e. of accuracy. To obtain be.te. pre.ictions, in addition to De. attribute., data re.ate. to landforms and/or lithology as soil-forming factors, should be.use. as ANN input data.

关键词： digital e.e.ation mode. attribute. multilaye. pe.ce.tron soil classification soil-forming factors soil surve.