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  • 12 篇 英文
检索条件"作者=Nallacheruvu Gopi krishna"
12 条 记 录,以下是1-10 订阅
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Temperature Dependence of Density and Thermal Expansion of Wrought Aluminum Alloys 7041, 7075 and 7095 by Gamma Ray Attenuation Method
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Journal of Modern Physics 2013年 第3期4卷 331-336页
作者: Kethireddy Narender Ammiraju Sowbhagya Madhusudhan Rao Kalvala Gopal Kishan Rao nallacheruvu gopi krishna CIC Kakatiya University Warangal India Department of Physics Kakatiya University Warangal India Varadha Reddy College of Engineering Warangal India
The gamma quanta attenuation studies have been carried out to determine mass attenuation coefficients of 7041, 7075 and 7095 wrought aluminum alloys. The temperature dependence of linear attenuation coefficient, densi... 详细信息
来源: 维普期刊数据库 维普期刊数据库 评论
Thermophysical Properties of NaCl, NaBr and NaF by <i>γ</i>-Ray Attenuation Technique
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Journal of Modern Physics 2013年 第2期4卷 208-214页
作者: Ammiraju Sowbhagya Madhusudhan Rao Kethireddy Narender Kalvala Gopal Kishan Rao nallacheruvu gopi krishna Central Instrumentation Centere (CIC) Kakatiya University Warangal India Department of Physics Kakatiya University Warangal India
The γ-ray densitometer has been designed and fabricated in our laboratory and carried out studies on temperature dependent γ-ray attenuation and thermo physical properties of NaCl, NaBr and NaF. The linear attenuati... 详细信息
来源: 维普期刊数据库 维普期刊数据库 评论
Enhancing Stress Intensity Factor Reduction in Cracks Originating from a Circular Hole in a Rectangular Plate under Uniaxial Stress through Piezoelectric Actuation
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Materials Sciences and Applications 2024年 第1期15卷 1-14页
作者: gopi krishna Konda Jens Schuster Yousuf Pasha Shaik Department of Applied Logistics and Polymer Sciences University of Applied Sciences Kaiserslautern Institute for Plastics Engineering West Pfalz (IKW) Pirmasens Germany
Circular holes are commonly employed in engineering designs;however, they often serve as locations where cracks initiate and propagate. This paper explores a novel approach to structural repair by utilizing piezoelect... 详细信息
来源: 维普期刊数据库 维普期刊数据库 评论
A threshold voltage model of short-channel fully-depleted recessed-source/drain(Re-S/D) SOI MOSFETs with high-k dielectric
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Chinese Physics B 2015年 第10期24卷 604-611页
作者: gopi krishna Saramekala Sarvesh Dubey Pramod Kumar Tiwari Department of Electronics and Communication Engineering National Institute of Technology Shri Ramswaroop Memorial University
In this paper, a surface potential based threshold voltage model of fully-depleted(FD) recessed-source/drain(Re-S/D)silicon-on-insulator(SOI) metal-oxide semiconductor field-effect transistor(MOSFET) is presen... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Magnesium matrix composites for biomedical applications:A review
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Journal of Magnesium and Alloys 2019年 第1期7卷 72-79页
作者: Vijay Kumar Bommala Mallarapu gopi krishna ChTirumala Rao Department of Mechanical Engineering Acharya Nagarjuna UniversityGuntur-522510Andhra PradeshIndia
In recent years,a new wave of bioactive,biocompatibility and biodegradable metallic materials were developed for orthopedic *** Magnesium,Magnesium alloys,Magnesium alloy-based composites are extensive material to the... 详细信息
来源: 维普期刊数据库 维普期刊数据库 评论
Analytical model for subthreshold current and subthreshold swing of short-channel double-material-gate MOSFETs with strained-silicon channel on silicon–germanium substrates
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Journal of Semiconductors 2014年 第10期35卷 30-36页
作者: Pramod Kumar Tiwari gopi krishna Saramekala Sarvesh Dubey Anand Kumar Mukhopadhyay National Institute of Technology Rourkela Department of Electronics and Communication Engineering Faculty of Electronics and Communication SRM University
The present work gives some insight into the subthreshold behaviour of short-channel double-material- gate strained-silicon on silicon-germanium MOSFETs in terms of subthreshold swing and off-current. The formu- latio... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Chemical reaction effect of an axisymmetric flow over radially stretched sheet
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Propulsion and Power Research 2019年 第1期8卷 79-84页
作者: B.Nayak S.R.Mishra G.gopi krishna Department of Mathematics Sikslia‘O’AnusandhanKhandagiriBhubaneswar 751030OdisaIndia Department of Mathematics Sri Venkateswara UniversityTirupatiIndia
A steady boundary layer flow over a porous flat plate has been considered in the present *** transfer analysis with first order chemical reaction is also considered instead of heat *** plate concentration is considere... 详细信息
来源: 维普期刊数据库 维普期刊数据库 评论
Swarm-LSTM: Condition Monitoring of Gearbox Fault Diagnosis Based on Hybrid LSTM Deep Neural Network Optimized by Swarm Intelligence Algorithms
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Computers, Materials & Continua 2021年 第2期66卷 2041-2059页
作者: gopi krishna Durbhaka Barani Selvaraj Mamta Mittal Tanzila Saba Amjad Rehman Lalit Mohan Goyal School of Electrical and Electronics Sathyabama Institute of Science and TechnologyChennai600119India Department of Computer Science and Engineering G.B.Pant Government Engineering CollegeNew Delhi110020India Artificial Intelligence and Data Analytics(AIDA)Laboratory CCISPrince Sultan UniversityRiyadh11586Saudi Arabia Department of Computer Engineering J.C.Bose University of Science and TechnologyFaridabad121006India
Nowadays,renewable energy has been emerging as the major source of energy and is driven by its aggressive expansion and falling *** of the renewable energy sources involve turbines and their operation and maintenance ... 详细信息
来源: 维普期刊数据库 维普期刊数据库 评论
Complete oxidation of 1,4-dioxane over zeolite-13X-supported Fe catalysts in the presence of air
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Chinese Journal of Catalysis 2016年 第2期37卷 240-249页
作者: C.Ramakrishna R.krishna T.gopi G.Swetha Bijendra Saini S.Chandra Shekar Anchal Srivastava 国防研发局、防化装备评估设备(CDEF) 印度那格浦尔MH-441108
Zeolite-13X-supported Fe(Fe/zeolite-13X) catalysts with various Fe contents were prepared by the wet impregnation *** catalysts were characterized by N2 adsorption-desorption isotherms to estimate the Brunauer-Emmet... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Analog and radio-frequency performance analysis of silicon-nanotube MOSFETs
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Journal of Semiconductors 2016年 第6期37卷 60-63页
作者: pramod kumar tiwari mukesh kumar ramavathu sakru naik gopi krishna saramekala Department of Electronics and Communication Engineering National Institute of TechnologyRourkela-769008OdishaIndia
This work presents a comparative study of the influence of various parameters on the analog and RF properties of silicon-nanotube MOSFETs and nanowire-based gate-all-around(GAA) *** important analog and RF performan... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论