Analog and radio-frequency performance analysis of silicon-nanotube MOSFETs

作     者：pramod kumar tiwari mukesh kumar ramavathu sakru naik gopi krishna saramekala 

作者机构：Department of Electronics and Communication EngineeringNational Institute of TechnologyRourkela-769008OdishaIndia 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2016年第37卷第6期

页      面：60-63页

核心收录：

学科分类：0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0702[理学-物理学] 

基　　金：supported by the Defence Research and Development Organisation(DRDO) Ministry of Defence Govt.of India(No.CC/TM/ERIPR/GIA/1516/020) 

主　　题：analog and RF SiNT MOSFETs GAA MOSFETs unity gain frequency unity power frequency 

摘      要：This work presents a comparative study of the influence of various parameters on the analog and RF properties of silicon-nanotube MOSFETs and nanowire-based gate-all-around（GAA） MOSFETs.The important analog and RF performance parameters of SiNT FETs and GAA MOSFETs,namely drain current（/d）,transconductance to drain current ratio（g_m/I_d）,I_（on）/I_（off）,the cut-off frequency（f_T） and the maximum frequency of oscillation（/max） are evaluated with the help of Y- and H-parameters which are obtained from a 3-D device simulator,ATLAS^（TM）.It is found that the silicon-nanotube MOSFETs have far more superior analog and RF characteristics（g_m/I_d,f_T and /max） compared to the nanowire-based gate-all-around GAA MOSFETs.The silicon-nanotube MOSFET shows an improvement of ~2.5 and 3 times in the case of f_T and /max values respectively compared with the nanowire-based gate-all-around（GAA） MOSFET.