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OH and O radicals production in atmospheric pressure air/Ar/H_2O gliding arc discharge plasma jet

Plasma Science and Technology 2017年第12期19卷 71-80页

作者： n c roy M R TALUKDER A n cHOWDHURY Plasma Science and Technology Laboratory Department of Applied Physics and Electronic EngineeringUniversity of RajshahiRajshahi 6205Bangladesh Bangladesh council of Scientific and Industrial Research Laboratory Rajshahi Rajshahi 6206Bangladesh

Atmospheric pressure air/Ar/H_2O gliding arc discharge plasma is produced by a pulsed dc power supply. An optical emission spectroscopic（OES） diagnostic technique is used for the characterization of plasmas and for identifications of OH and O radicals along with other species in the plasmas. The OES diagnostic technique reveals the excitation Tx？≈？5550–9000 K, rotational Tr？≈？1350–2700 K and gas Tg？≈？850–1600 K temperatures, and electron density n？（1.1-1.9） ′101 4 cm^（-3） e under different experimental conditions. The production and destruction of OH and O radicals are investigated as functions of applied voltage and air flow rate. Relative intensities of OH and O radicals indicate that their production rates are increased with increasing Ar content in the gas mixture and applied voltage. nereveals that the higher densities of OH and O radicals are produced in the discharge due to more effective electron impact dissociation of H_2O and O_2 molecules caused by higher kinetic energies as gained by electrons from the enhanced electric field as well as by enhanced n *** productions of OH and O are decreasing with increasing air flow rate due to removal of Joule heat from the discharge region but enhanced air flow rate significantly modifies discharge maintenance properties. Besides, Tgsignificantly reduces with the enhanced air flow rate. This investigation reveals that Ar plays a significant role in the production of OH and O radicals.

关键词： reactive oxygen species(ROS) optical emission spectroscopy(OES) gliding arc discharge plasma kinetics broadening mechanism

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Ion acoustic shock and periodic waves through Burgers equation in weakly and highly relativistic plasmas with nonextensivity

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Plasma Science and Technology 2017年第1期19卷 7-19页

作者： M G HAFEZ n c roy M R TALUKDER M HOSSAIn ALI Department of of Applied Mathematics University of Rajshahi Rajshahi-6205 Bangladesh Department of Mathematics Chittagong University of Engineering and Technology Chittagong-4349Bangladesh Plasma Science and Technology Lab Department of Applied Physics and Electronic EngineeringUniversity of Rajshahi Rajshahi-6205 Bangladesh

A comparative study is carried out for the nonlinear propagation of ion acoustic shock waves both for the weakly and highly relativistic plasmas consisting of relativistic ions and qdistributed electrons and *** Burgers equation is derived to reveal the physical phenomena using the well known reductive perturbation *** integration of the Burgers equation is performed by the（G￠/G）-expansion *** effects of positron concentration,ion–electron temperature ratio,electron–positron temperature ratio,ion viscosity coefficient,relativistic streaming factor and the strength of the electron and positron nonextensivity on the nonlinear propagation of ion acoustic shock and periodic waves are presented graphically and the relevant physical explanations are provided.

关键词： electron-positron-ion plasmas ion acoustic shock and periodic waves weakly and highly relativistic effects Burgers equation

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Atmospheric pressure gliding arc discharge plasma treatments for improving germination, growth and yield of wheat

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Plasma Science and Technology 2018年第11期20卷 90-100页

作者： n c roy M M HASAn A H KABIR M A REZA M R TALUKDER A n cHOWDHURY Plasma Science and Technology Laboratory Department of Applied Physics and Electronic EngineeringUniversity of Rajshahi Rajshahi 6205 Bangladesh Department of Agronomy and Agricultural Extension University of Rajshahi Rajshahi 6205 Bangladesh Depatment of Botany University of Rajshahi Rajshahi 6205Bangladesh Department of Genetic Engineering and Biotechnology University of Rajshahi Rajshahi 6205Bangladesh Bangladesh council of Scientific and Industrial Research Laboratory Rajshahi Rajshahi 6206Bangladesh

Wheat （Triticum aestivum） seeds were treated with atmospheric pressure gliding arc discharge plasmas to investigate the effects on water absorption, seed germination rate, seedling growth and yield in wheat. The surface architectures and functionalities of the seeds were found to modify due to plasma treatments. 6 rain treatment was provided 95%-100% germination rate. For the treatment duration of 3 and 9 rain the growth activity, dry matter accumulation, leaves chlorophyll contents, longest spikes, number of spikes/spikelet and total soluble protein content in shoots were improved. The grain yield of wheat was increased ,--20% by 6 min treatment with H2O/O2 plasma with respect to control.

关键词： atmospheric pressure gliding arc discharge plasmas wheat germination growth improvement total soluble protein

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Silk-based nerve guidance conduits with macroscopic holes modulate the vascularization of regenerating rat sciatic nerve

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neural Regeneration Research 2025年第6期20卷 1789-1800页

作者： carina Hromada Patrick Heimel Markus Kerbl LászlóGál Sylvia nürnberger Barbara Schaedl James Ferguson nicole Swiadek Xavier Monforte Johannes c.Heinzel Antal nógrádi Andreas H.Teuschl-Woller David Hercher Department Life Science Engineering University of Applied Sciences Technikum WienViennaAustria Austrian cluster for Tissue Regeneration ViennaAustria Ludwig Boltzmann Institute for Traumatology The Research Center in Cooperation with AUVAViennaAustria University clinic of Dentistry Medical University of ViennaViennaAustria Department of Plastic Reconstructive and Aesthetic SurgeryLandesklinikum Wiener Neustadt2700 Wiener NeustadtAustria Department of Anatomy Histology and EmbryologyAlbert Szent-Györgyi Medical SchoolUniversity of SzegedSzegedHungary Medical University of Vienna Department of Orthopedics and Trauma SurgeryDevision of Trauma SurgeryViennaAustria Department of Hand- PlasticReconstructive and Burn SurgeryBG Unfallklinik TuebingenUniversity of TuebingenTuebingenGermany

Peripheral nerve injuries induce a severe motor and sensory deficit. Since the availability of autologous nerve transplants for nerve repair is very limited, alternative treatment strategies are sought, including the use of tubular nerve guidance conduits(tnGcs). However, the use of tnGcs results in poor functional recovery and central necrosis of the regenerating tissue, which limits their application to short nerve lesion defects(typically shorter than 3 cm). Given the importance of vascularization in nerve regeneration, we hypothesized that enabling the growth of blood vessels from the surrounding tissue into the regenerating nerve within the tnGc would help eliminate necrotic processes and lead to improved regeneration. In this study, we reported the application of macroscopic holes into the tubular walls of silk-based tnGcs and compared the various features of these improved silk^(+) tnGcs with the tubes without holes(silk^(–) tnGcs) and autologous nerve transplants in an 8-mm sciatic nerve defect in rats. Using a combination of micro-computed tomography and histological analyses, we were able to prove that the use of silk^(+) tnGcs induced the growth of blood vessels from the adjacent tissue to the intraluminal neovascular formation. A significantly higher number of blood vessels in the silk^(+) group was found compared with autologous nerve transplants and silk^(–), accompanied by improved axon regeneration at the distal coaptation point compared with the silk^(–) tnGcs at 7 weeks postoperatively. In the 15-mm(critical size) sciatic nerve defect model, we again observed a distinct ingrowth of blood vessels through the tubular walls of silk^(+) tnGcs, but without improved functional recovery at 12 weeks postoperatively. Our data proves that macroporous tnGcs increase the vascular supply of regenerating nerves and facilitate improved axonal regeneration in a short-defect model but not in a critical-size defect model. This study suggests that further optimizatio

关键词： axon regeneration blood vessel functional recovery macroporous nerve lesion peripheral nerve repair sciatic nerve silk-based nerve guidance conduit vascularization

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Green ionic metal-organic frameworks as nanocatalysts for cO_(2)fixation

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nano Research 2025年第1期18卷 260-269页

作者： nuria Martín Miguel Maireles-Porcar Julián Sánchez Velandia Belén Altava Francisco G.cirujano Eduardo García-Verdugo Departamento de Química Inorgánica y Orgánica Universidad Jaume IAv.Sos Baynats/nCastellóde la PlanaCastellón 12071Spain

co,ni,and Zn iso-reticular coordination polymers of 2,5-dihydroxyterphthalic acid(H_(2)dot)can be rapidly obtained under room temperature and aqueous conditions using either sodium or ammonium hydroxide as the bases to deprotonate the *** use of metal bromides and tetrabutylammonium hydroxide(TBAOH)as the base allows the green synthesis of ionic metal-organic frameworks(MOFs),characterized by X-ray diffraction(XRD),Fourier transform infrared(FTIR),scanning electron microscopy(SEM),thermo gravimetric analysis(TGA),H-nuclear magnetic resonance(nMR),elemental analysis,and X-ray photoelectron spectroscopy(XPS),and employed in the pressure,solvent,and additive-free cO_(2)fixation to epoxides by its cycloaddition to epichlorohydrin,exhibiting a cooperative behavior between the MOF and the ionic liquid formed within the framework,achieving TOns of the confined tetrabutylammonium bromide(TBABr)up to 700.

关键词： metal-organic frameworks(MOFs) ionic liquids heterogeneous catalysis cO_(2)conversion

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Effect of sintering temperature on the chemical bonding,electronic structure and electrical transport properties of β-Ga_(1.9)Fe_(0.1)O_(3) compounds

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Journal of Materials Science & Technology 2021年第8期67卷 135-144页

作者： Swadipta roy c.V.Ramana center for Advanced Materials Research(cMR) University of Texas at El PasoEl Paso500 W University AveEl PasoTX79968United States

A model system,which is based on iron(Fe)doped gallium oxide(Ga_(2)O_(3))(Ga_(1.9)Fe_(0.1)O_(3)),has been considered to elucidate the combined effect of transition-metal ion doping and processing temperature on the chemistry,local structure and chemical bonding,and electrical transport properties of a wide band gap oxide(Ga_(2)O_(3)).The Ga_(1.9)Fe_(0.1)O_(3) compounds were synthesized using standard high-temperature solid state reaction *** effect of processing conditions in terms of different calcination and sintering environments on the structural and electrical properties of Ga_(1.9)Fe_(0.1)O_(3) compounds is studied in *** characterization by Raman spectroscopy revealed that Ga_(1.9)Fe_(0.1)O_(3) compounds exhibit monoclinic crystal symmetry,which is quite similar to the intrinsic parental crystal structure,though Fedoping induces lattice *** temperature(T_(sint))which was varied in the range of 900-1200℃,has significant impact on the structure,chemical bonding,and electrical properties of Ga_(1.9)Fe_(0.1)O_(3) *** spectroscopic measurements indicate the proper densification of the Ga_(1.9)Fe_(0.1)O_(3) compounds achieved through complete Fe diffusion into the parent Ga_(2)O_(3) lattice which is evident at the highest sintering *** X-ray photoelectron spectroscopy validates the chemical states of the constituent elements in Ga_(1.9)Fe_(0.1)O_(3) *** electrical properties of Ga_(1.9)Fe_(0.1)O_(3) fully controlled by T_(sint),which governed the grain size and microstructural *** temperature and frequency dependent electrical measurements demonstrated the salient features of the Fe doped Ga_(2)O_(3) *** activation energy determined from Arrhenius equation is 0.5 e *** results demonstrate that control over structure,morphology,chemistry and electrical properties of the Ga_(1.9)Fe_(0.1)O_(3) compounds can be achieved by optimizing T_(sint).

关键词： Ga_(2)O_(3)compounds Fe-doping Raman spectroscopy chemical bonding Electrical properties

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A model to determine soiling,shading and thermal losses from PV yield data

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clean Energy 2022年第2期6卷 372-391页

作者： S.Ghosh J.n.roy c.chakraborty Advanced Technology Development centre Indian Institute of Technology Kharagpur721302India Department of Electrical Engineering Indian Institute of Technology Kharagpur721302India

Apart from being a clean source of energy,photovoltaic(PV)power plants are also a source of income generation for its investors and ***,mitigation of system losses is crucial for economic operation of PV *** losses due to soiling,shading and temperature in PV plants go as high as 50%.Much of these losses are unaccounted initially,which can jeopardize the economic viability of PV *** paper aims to provide a model to determine losses due to soiling,shading and temperature using quantities like irradiance,cell temperature,Dc power and current,which are readily available in PV yield data captured by the remote monitoring system,without involving any additional sensors or *** this study,soiling,shading and thermal losses were calculated using PV yield data obtained from a 30-kWp PV plant located in Kharagpur,*** results showed soiling and shading losses as high as 25.7%and 9.7%,respectively,in the month of *** loss was verified by measuring transmittance loss of coupon glasses installed in the vicinity of the *** loss was verified by shadow simulation using an architectural tool(SketchUp).Array thermal loss obtained using the proposed methodology was found to be in line with the estimated value obtained from PVsyst ***,using time-series data,the energy losses corresponding to soiling,shading and temperature effects were calculated by a numerical-integration *** monetary loss due to these energy losses thus obtained provides criteria for deciding when to mitigate the sources of these losses.

关键词： solar photovoltaics solar PV plant soiling losses solar shading losses solar PV system losses

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Mathematical modeling of nanoscale MOS capacitance in the presence of depletion and energy quantization in a poly-silicon gate

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Journal of Semiconductors 2010年第11期31卷 5-8页

作者： Amit chaudhry J.n.roy Institute of Engineering and Technology Panjab University Solar Semiconductor Pvt.Ltd.

A model has been developed to study the effect of depletion and energy quantization at the poly-silicon /oxide interface on the behavior of a nanometer scale n-MOSFET.A model of inversion charge density,including the inversion layer quantization using the variation approach in the substrate,has also been *** the exact calculations of the polygate potential under the depletion and quantization conditions,a c-V model has been developed. All the results have been compared with the numerical models reported in existing literature and they show good agreement.

关键词： BSIM inversion layers MOS devices quantization poly-depletion poly-quantization

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Amyloid-beta pathology-induced nanoscale synaptic disruption:the case of the GABA_B-GIRK assembly

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neural Regeneration Research 2025年第5期20卷 1409-1410页

作者： Rafael Lujan Alejandro Martín-Belmonte Sergi Ferré Francisco ciruela Synaptic Structure Laboratory Instituto de Biomedicina de la UCLM(IB-UCLM)Departamento de Ciencias MédicasInstituto de Investigación en Salud de Castilla-La Mancha(IDISCAM)Facultad de MedicinaUniversidad Castilla-La ManchaCampus BiosanitarioC/AlmansaAlbaceteSpain Integrative neurobiology Section National Institute on Drug AbuseIntramural Research ProgramNational Institutes of HealthBaltimoreMDUSA Pharmacology Unit Department of Pathology and Experimental TherapeuticsSchool of Medicine and Health SciencesInstitute of NeurosciencesUniversity of BarcelonaNeuropharmacology&Pain GroupNeuroscience ProgramBellvitge Institute for Biomedical ResearchL’Hospitalet de LlobregatSpain

Alzheimer's disease (AD) is characterized by an imbalance between excitatory and inhibitory brain networks,leading to aberrant homeostatic synaptic *** has progressively been recognized as syna ptopathy and syna ptic dysfunction has been identified as a key component of its pathogenesis (Schirinzi et al.,2020).Syna ptic dysfunction is believed to precede synapse loss,a primary biological correlate of cognitive decline in AD,inevita bly associated with neuronal death.

关键词： Alzheimer pathology

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nanoscale strained-Si MOSFET physics and modeling approaches:a review

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Journal of Semiconductors 2010年第10期31卷 19-23页

作者： Amit chaudhry J.n.roy Garima Joshi University Institute of Engineering and Technology Panjab University Solar Semiconductor Private Limited

An attempt has been made to give a detailed review of strained silicon technology. Various device models have been studied that consider the effect of strain on the devices, and comparisons have been drawn. A review of some modeling issues in strained silicon technology has also been outlined. The review indicates that this technology is very much required in nanoscale MOSFETs due to its several potential benefits, and there is a strong need for an analytical model which describes the complete physics of the strain technology.

关键词： mobility SiGe strained-Si technology cAD

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