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Water Dynamics Combined with a Supply of NPk Solutes and Urea in a 3-Layer Soil Profile under Drip Irrigation

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Agricultural Sciences 2021年第11期12卷 1321-1341页

作者： Siguibnoma kévin Landry Ouédraogo marcel bawindsom kébré François Zougmoré Laboratoire de Matériaux et Environnement UFR/ST Université Joseph KI-ZERBO Ouagadougou Burkina Faso

The intensive and inappropriate use of water, fertilizers and phytosanitary products is sources of water and soil pollution. It is thus necessary to improve the management of irrigation water in order to optimize its use and productivity, especially in regions where water resources are becoming increasingly scarce. The water flow and non-reactive solutes’ transport simulation under drip irrigation were carried out in a 3-layered soil profile distributed from top to bottom i.e., sandy, sandy-silty, silty-sandy-clay. The aim of this study was thus, to provide a good practice of water management associated with solutes’ application, in order to retain as much solute as possible in the root zone, which will increase the residence time of the solutes. Three treatments of water flux corresponding to 100% ETc, 75% ETc, 50% ETc, combined with 100 mmol /L/ m2 of NPk and 246 mmol/L/m2 of urea applicable in two doses, were carried out over a period of 110 days corresponding to the duration of the cropping cycle for the intermediate variety of maize. The 100% ETc and 75% ETc treatments cause more loss of water and solutes, because of the sandy texture of the soil. However, a 50% ETc water flux would reduce more water loss through drainage, and solutes’ loss due to leaching beyond the root zone, which would increase the residence time of solutes in the soil profile. Application tests of the NPk solute on different days before the 15th day after sowing were also carried out according to the technical itinerary for maize production in Burkina Faso, in order to find a favorable day for application of the solute. For the different dates of solute’s application, there was more loss of the solute as we approach the 15th day after sowing. To limit this loss and i

关键词： Drip Irrigation Hydrus 1D Solute and Water Management Residence Time

Comprehensive Analysis of CuIn1-xGaxSe2Based Solar Cells with Zn1-yMgyO Buffer Layer

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Materials Sciences and Applications 2020年第12期11卷 880-892页

作者： Soumaïla Ouédraogo marcel bawindsom kébré Ariel Teyou Ngoupo Daouda Oubda François Zougmoré Laboratoire de Matériaux et Environnement (LA.M.E)-UFR/SEA Université Joseph Ki-ZERBO Ouagadougou Burkina Faso Département de Physique Faculté des Sciences Université de Yaoundé I Yaoundé Cameroun

The development of cadmium-free CIGS solar cells with high conversion efficiency is crucial due to the toxicity of cadmium. Zinc-based buffer layers seem to be the most promising. In this paper, a numerical analysis using SCAPS-1D software was used to explore the Zn(Mg,O) layer as an alternative to the toxic CdS layer. The effect of several properties such as thickness, doping, Mg concentration of the Zn(Mg,O) layer on the current-voltage parameters was explored and their optimal values were proposed. The simulation results reveal that the optimal value of the ZMO layer thickness is approximately 40 nm, the doping at 1017 cm-3 and an Mg composition between 0.15 and 0.2. In addition, the effect of Gallium (Ga) content in the absorber as well as the Zn(Mg,O)/CIGS interface properties on the solar cell’s performance was examined. The results show that contrary to the CdS buffer layer, the best electrical characteristics of the ZMO/CIGS heterojunction are obtained using a Ga-content equal to 0.4 and high interface defect density or unfavorable band alignment may be the causes of poor performances of Zn(Mg,O)/CIGS solar cells in the case of low and high Mg-contents.

关键词： Device Modeling Zn(Mg O) Cu(In Ga)Se2 Interface Sates Conduction Band Offset

Effect of Defects at the Buffer Layer CdS/Absorber CIGS Interface on CIGS Solar Cell Performance

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Advances in Chemical Engineering and Science 2023年第4期13卷 289-300页

作者： Boureima Traoré Soumaïla Ouédraogo marcel bawindsom kébré Daouda Oubda Issiaka Sankara Adama Zongo François Zougmoré Laboratoire de Matériaux et Environnement (LA.M.E)-UFR/SEA Département de Physique Université Joseph Ki-ZERBO Ouagadougou Burkina Faso

This scientific paper presents a study investigating the effects of defects at the CdS/CIGS and CdS/SDL interfaces on the performance of CIGS solar cells. The objective of this study is to analyze the influence of defects at the interface between the CdS buffer layer and the CIGS absorber, as well as the surface defect layer (SDL), on CIGS solar cell performance. The study explores three key aspects: the impact of the conduction band offset (CBO) at the CdS/CIGS interface, the effects of interface defects and defect density on performance, and the combined influence of CBO and defect density at the CdS/ SDL and SDL/CIGS interfaces. For interface defects not exceeding 1013 cm-2, we obtained a good efficiency of 22.9% when -0.1 eV analyzing the quality of CdS/SDL and SDL/CIGS junctions, it appears that defects at the SDL/CIGS interface have very little impact on the performances of the CIGS solar cell. By optimizing the electrical parameters of the CdS/SDL interface defects, we achieved a conversion efficiency of 23.1% when -0.05 eV < CBO < 0.05 eV.

关键词： Numerical Simulation CdS/CIGS Interface Interface Defects Conduction Band Offset (CBO) Surface Defect Layer (SDL)

Influence of Defect Density, Band Gap Discontinuity and Electron Mobility on the Performance of Perovskite Solar Cells

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Advances in Materials Physics and Chemistry 2023年第8期13卷 151-160页

作者： Issiaka Sankara Soumaïla Ouédraogo Daouda Oubda Boureima Traoré marcel bawindsom kébré Adama Zongo François Zougmoré Département de Physique Laboratoire de Matériaux et Environnement (LA.M. E)-UFR/SEA Université Joseph Ki-ZERBO Ouagadougou Burkina Faso

In this manuscript, we used the SCAPS-1D software to perform numerical simulations on a perovskite solar cell. These simulations were used to study the influence of certain parameters on the electrical behavior of the cell. We have shown in this study that electron mobility is strongly influenced by the thickness of the absorber, since electron velocity is reduced by thickness. The influence of the defect density shows that above 1016 cm-3 all the electrical parameters are affected by the defects. The band discontinuity at the interface generally plays a crucial role in the charge transport phenomenon. The importance of this study is to enable the development of good quality perovskite solar cells, while taking into account the parameters that limit solar cell performance.

关键词： Defect Density Electron Mobility Band Gap Perovskite SCAPS-1D Software

Required CIGS and CIGS/Mo Interface Properties for High-Efficiency Cu(In, Ga)Se2Based Solar Cells

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Advances in Materials Physics and Chemistry 2020年第7期10卷 151-166页

作者： Soumaïla Ouédraogo marcel bawindsom kébré Ariel Teyou Ngoupo Daouda Oubda François Zougmoré Jean-Marie Ndjaka Laboratoire de Matériaux et Environnement (LA.M.E)− UFR/SEA Université Joseph Ki-ZERBO Ouagadougou Burkina Faso Département de Physique Faculté des Sciences Université de Yaoundé I Yaoundé Cameroun

In this work, we have modeled and simulated the electrical performance of CIGS thin-film solar cell using one-dimensional simulation software (SCAPS-1D). Starting from a baseline model that reproduced the experimental results, the properties of the absorber layer and the CIGS/Mo interface have been explored, and the requirements for high-efficiency CIGS solar cell were proposed. Simulation results show that the band-gap, acceptor density, defect density are crucial parameters that affect the performance of the solar cell. The best conversion efficiency is obtained when the absorber band-gap is around 1.2 eV, the acceptor density at 1016 cm−3 and the defect density less than 1014 cm−3. In addition, CIGS/Mo interface has been investigated. It appears that a thin MoSe2 layer reduces recombination at this interface. An improvement of 1.5 to 2.5 mA/cm2 in the current density (Jsc) depending on the absorber thickness is obtained.

关键词： Cu(In Ga)Se2 Band-Gap Acceptor Density Defect Density Mo/CIGS-Interface

High Performance for Cu(In,Ga)Se₂ Quaternary System-Based Solar Cells with Alternative Buffer Layers

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Advances in Materials Physics and Chemistry 2022年第9期12卷 207-219页

作者： Daouda Oubda marcel bawindsom kébré Soumaïla Ouédraogo Alain Diasso François Zougmoré Zacharie koalga Frédéric Ouattara Laboratoire de Matériaux et Environnement (LA.M.E)-UFR/SEA Université Joseph KI-ZERBO Ouagadougou Burkina Faso Laboratoire de Recherche en Energétique et Météorologie de l’Espace (LA.R.E.M.E) Université Norbert Zongo Koudougou Burkina Faso

In this study, the authors investigated the performance of different buffer layers through the electrical parameters such as Jsc, Voc, QE and η of the quaternary system Cu(In,Ga)Se2 solar cells. The performance of Cu(In,Ga)Se2solar cells has been modeled and numerically simulated by using the SCAPS- 1D device simulation tool. The cells with a ZnSe, Zn(O,S) and (Zn,Mg)O buffer layers were compared with the reference CdS buffer layer. The investigation of ZnSe, Zn(O, S) and (Zn,Mg)O-based cells to substitute the traditional CdS in the future shows that the ZnSe-buffer layer is a potential material to replace CdS, which revealed the best efficiency of 20.76%, the other electrical parameters are: JSC = 34.6 mA/cm2, VOC = 0.76 V and FF = 79.6%. The losses as a function of the temperature are estimated at 0.1%/k, among all kinds of buffer layers studied. We have also shown that the use of a high band-gap buffer layer is necessary to obtain a better short-circuit current density JSC. From our results, we note that the chalcogenide solar cells with Zn-based alternative buffer layer have almost the same stability thatthe traditional CdS buffer layer solar cells have.

关键词： Thin Film Solar Cells CIGS Absorber Alternative Buffer Layers SCAPS-1D Electrical Parameters

Renewable Energies in Africa, Context and Socio-Economic Challenge

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Open Journal of Applied Sciences 2022年第11期12卷 1856-1872页

作者： Daouda Oubda Soumaïla Ouédraogo Alain Diasso marcel bawindsom kébré François Zougmoré Zacharie koalga Frédéric Ouattara LA.M.E (Laboratoire de Matériaux et Environnement) UFR-SEA (Unité de Formation et de Recherche en Sciences Exactes et Appliquées) Ecole Doctorale Sciences et Technologies Université Joseph KI-ZERBO Ouagadougou Burkina Faso LA.R.E.M.E (Laboratoire de Recherche en Energétique et Météorologie de l’Espace) Université Norbert Zongo Koudougou Burkina Faso

In this paper, we have shown that Africa has an enormous wealth of renewable energy resources among the most important in the world such as the strong sunshine, Congo and Nile Rivers respectively among the most powerful and the longest in the world. We have underlined the presence of important forests, rich subsoil in mineral elements, and strong winds. In addition to a rapidly growing human capital, Africa, therefore, has at its disposal all the factors enabling it to initiate sustainable and inclusive socio-economic development. We have shown that the transformation of these renewable energies is an opportunity for Africa to reach its socio-economic challenges. The development of renewable energies in Africa will be a source of many financial benefits and advantages both in terms of improving living conditions and carrying out activities. The electrical supply of rural areas of Africa represents a considerable issue, which can be a propellant factor in long-term socio-economic development if the conditions of use of clean fuel and cooking technologies, especially sanitary are taken into account. The provision of modern energy services can contribute to the creation of jobs for young people upstream. Among other things, we can note the development of local skills, the creation of income-generating activities, and the improvement of hygiene and health measures which are necessary conditions for family and social well-being. This requires a policy focused, on research in general and in particular on semiconductors that participate in the transformation of photovoltaic solar energy. We have stressed that Africa which is currently experiencing a period of economic growth and sustained transformation must be very looking at in its energy policy and give pride of place to renewable energies to initiate sustainable socio-economic development, equitable and inclusive different social strata both in rural areas and urban areas.

关键词： Africa Renewable Energy Photovoltaic Solar Energy Semiconductor Socio-Economic Urban Area Rural Area

Optimization of Mo/Cu(In,Ga)Se2/CdS/ZnO Hetero-Junction Solar Cell Performance by Numerical Simulation with SCAPS-1D

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材料科学与工程（中英文B版） 2021年第4期11卷 156-167页

作者： Adama Zongo Daouda Oubda Soumaïla Ouédraogo marcel bawindsom kébré Alain Diasso Issiaka Sankara Boureima Traore François Zougmoré Zacharie koalga Frédéric Ouattara LA.M.E(Laboratoire de Matériaux et Environnement) UFR-SEA(Unitéde Formation et de Recherche en Sciences Exactes et Appliquées)Ecole Doctorale Sciences et Technologies UniversitéJoseph KI-ZERBOOuaga 03 BP 7021Burkina Faso LA.R.E.M.E(Laboratoire de Recherche en Energétique et Météorologie de l’Espace) Ecole Doctorale Sciences et TechnologiesUniversitéNorbert ZongoKoudougou BP 376Burkina Faso

The paper presents a one-dimensional simulation study of chalcopyrite Cu(In,Ga)Se2(CIGS)solar cells,where the effects of the variation of CIGS,CdS,and ZnO layers are *** the influence of the variation of doping and the defects density of shallow uniform donors and acceptors types are also *** analyse of the simulation results shows that recombination inside the space charge region(SCR)decrease more our CIGS solar cell model *** also found that the electrical parameters increase with increasing CIGS absorber doping density exception of JSC values that reach their maximum at 1016cm-3 and decrease due to recombination of charge carriers in the p-n junction particularly the recombination inside the *** also stressed the fact that the effects of shallow uniforme donor density is very low on the performance of our CIGS solar cell model is important because it will allow to control the width of space charge region from shallow uniform acceptors defect density that has a strong influence on the different electrical ***,good optimization of performance of the CIGS-based solar cell necessarily passes though a good control of the space charge region width and will constitute a boosting perspective for the preparation of our next *** contact that the results obtained of the numerical simulation with SCAPS-1D show a good agreement comparatively of the literature *** simulation of our CIGS solar cell presents best performances if the values of the absorber layer thickness is in the range of 0.02 to 0.03μm,the buffer layer thickness is in the range of 0.02 to 0.06μm and the defects density of shallow uniform acceptors types is in the range of 1015 to 1017cm-3.

关键词： Numerical simulation SCAPS-1D CIGS solar cell shallow uniform donors and acceptors defect density

Numerical Simulation of Cu（In,Ga）Se2 Solar Cells Performances

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Journal of Energy and Power Engineering 2015年第12期9卷 1047-1055页

作者： Daouda Oubda marcel bawindsom kebre Francois Zougmore Donatien Njomo Frederic Ouattara LA.M.E (Laboratoire de Materiaux et Environnement) UFR-SEA (Unite de Formation et de Recherche en Sciences Exactes et Appliquees) Universite de Ouagadougou Ouaga 03 BP 7021 Burkina Faso L.A.T.E.E (Laboratoire d'Analyse des Technologies de l'Energie et de l'Environnement)-FAST (Faculte des Sciences et Techniques)-Sciences Universite Yaounde I Yaounde 812 Cameroun LA.R.E.M.E (Laboratoire de Recherche en Energdtique et Meteorologie de l'Espace) ENS (Ecole Normale Superieure) Universite de Koudougou Koudougou BP 376 Burkina Faso

This paper presents a numerical characterization of copper-indium-gallium-diselenide thin film solar cells using one dimensional simulation program （SCAPS-1D）. We have performedan optimization of the performances of the standard Mo/Cu（In, Ga）Se2/CdS/ZnO solar cells using current-voltage and quantum efficiency methods. With a CuIn..7Ga0.3Se2 absorber, we have investigated the buffer layer thickness, temperature, series and shunt resistances effects on the open-circuit voltage, short-circuit current density, fill factor, conversion efficiency and quantum efficiency. The simulated results show good performances when the thickness of the buffer layer is in the range of 10-40 um due to the reduction of absorption in the short wavelenghts （380-500 nm）. High performances of the model is obtained when the series and shunt resistances is in the range of 0.1-1 Ω·cm^2 and 1,000 Ω·cm^2, respectively. Under these conditions, the cell can theoretically operate under an ambiant temperature of 370 k without any loss of its performances.

关键词： Numerical simulation SCAPS-1D CdS thickness temperature Rs Rsh