Required CIGS and CIGS/Mo Interface Properties for High-Efficiency Cu(In, Ga)Se<SUB>2</SUB>Based Solar Cells

作     者：Soumaïla Ouédraogo Marcel Bawindsom Kébré Ariel Teyou Ngoupo Daouda Oubda François Zougmoré Jean-Marie Ndjaka Soumaïla Ouédraogo;Marcel Bawindsom Kébré;Ariel Teyou Ngoupo;Daouda Oubda;François Zougmoré;Jean-Marie Ndjaka

作者机构：Laboratoire de Matériaux et Environnement (LA.M.E)− UFR/SEA Université Joseph Ki-ZERBO Ouagadougou Burkina Faso Département de Physique Faculté des Sciences Université de Yaoundé I Yaoundé Cameroun 

出 版 物：《Advances in Materials Physics and Chemistry》 (材料物理与化学进展（英文）)

年 卷 期：2020年第10卷第7期

页      面：151-166页

学科分类：0808[工学-电气工程] 08[工学] 

主　　题：Cu(In Ga)Se₂ Band-Gap Acceptor Density Defect Density Mo/CIGS-Interface 

摘      要：In this work, we have modeled and simulated the electrical performance of CIGS thin-film solar cell using one-dimensional simulation software (SCAPS-1D). Starting from a baseline model that reproduced the experimental results, the properties of the absorber layer and the CIGS/Mo interface have been explored, and the requirements for high-efficiency CIGS solar cell were proposed. Simulation results show that the band-gap, acceptor density, defect density are crucial parameters that affect the performance of the solar cell. The best conversion efficiency is obtained when the absorber band-gap is around 1.2 eV, the acceptor density at 1016 cm−3 and the defect density less than 1014 cm−3. In addition, CIGS/Mo interface has been investigated. It appears that a thin MoSe2 layer reduces recombination at this interface. An improvement of 1.5 to 2.5 mA/cm2 in the current density (Jsc) depending on the absorber thickness is obtained.