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n+-p-p+Silicon Solar Cell base Optimum Thickness Determination under Magnetic Field

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Journal of Electromagnetic Analysis and Applications 2020年第7期12卷 103-113页

作者： Cheikh Thiaw mamadou lamine ba Mamour Amadou ba Gora Diop Ibrahima Diatta Mor Ndiaye Gregoire Sissoko Laboratory of Semiconductors and Solar Energy Physics Department Faculty of Science and Technology University Cheikh Anta Diop Dakar Senegal

base optimum thickness is determined for a front illuminated bifacial silicon solar cell n+-p-p+ under magnetic field. From the magneto transport equation relative to excess minority carriers in the base, with specific boundary conditions, the photocurrent is obtained. From this result the expressions of the carrier’s recombination velocity at the back surface are deducted. These new expressions of recombination velocity are plotted according to the depth of the base, to deduce the optimum thickness, which will allow the production, of a high short-circuit photocurrent. Calibration relationships of optimum thickness versus magnetic field were presented according to study ranges. It is found that, applied magnetic field imposes a weak thickness material for solar cell manufacturing leading to high short-circuit current.

关键词： Silicon Solar Cell Magnetotransport Surface Recombination Velocity base Thickness

base Thickness Optimization of a (n+-p-p+) Silicon Solar Cell in Static Mode under Irradiation of Charged Particles

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Journal of Electromagnetic Analysis and Applications 2019年第10期11卷 173-185页

作者： mamadou lamine ba Ndeye Thiam Moustapha Thiame Youssou Traore Masse Samba Diop Mamour ba Cheikh Tidiane Sarr mamadou Wade Gregoire Sissoko Laboratory of Sciences and Techniques of Water and Environment Polytechnic School of Thiès Thiès Senegal Laboratory of Semiconductors and Solar Energy Physics Department Faculty of Science and Technology University Cheikh Anta Diop Dakar Senegal.

In this work, we propose a method to determinate the optimum thickness of a monofacial silicon solar cell under irradiation. The expressions of back surface recombination velocity depending the damage coefficient (kl) and irradiation energy (øp) are established. From their plots, base optimum thickness is deduced from the intercept points of the curves. The short-circuit currents Jsc0 and Jsc1 corresponding to the recombination velocity Sb0 and Sb1 are determinated and a correlation between the irradiation energy, the damage coefficient and optimum thickness of the base is established.

关键词： Silicon Solar Cell Irradiation Recombination Velocity base Thickness

back Surface Recombination Velocity Dependent of Absorption Coefficient as Applied to Determine base Optimum Thickness of an n+/p/p+ Silicon Solar Cell

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Energy and Power Engineering 2020年第7期12卷 445-458页

作者： Meimouna Mint Sidi Dede mamadou lamine ba Mamour Amadou ba Mor Ndiaye Sega Gueye El Hadj Sow Ibrahima Diatta Masse Samba Diop mamadou Wade Gregoire Sissoko Laboratory of Semiconductors and Solar Energy Physics Department Faculty of Science and Technology University Cheikh Anta Diop Dakar Senegal Ecole Polytechnique de Thiès (EPT) Thiès Senegal

The monochromatic absorption coefficient of silicon, inducing the light penetration depth into the base of the solar cell, is used to determine the optimum thickness necessary for the production of a large photocurrent. The absorption-generation-diffusion and recombination (bulk and surface) phenomena are taken into account in the excess minority carrier continuity equation. The solution of this equation gives the photocurrent according to absorption and electronic parameters. Then from the obtained short circuit photocurrent expression, excess minority carrier back surface recombination velocity is determined, function of the monochromatic absorption coefficient at a given wavelength. This latter plotted versus base thickness yields the optimum thickness of an n+-p-p+ solar cell, for each wavelength, which is in the range close to the energy band gap of the silicon material. This study provides a tool for improvement solar cell manufacture processes, through the mathematical relationship obtained from the thickness limit according to the absorption coefficient that allows base width optimization.

关键词： Silicon Solar Cell Absorption Coefficient back Surface Recombination Optimum Thickness

Shunt Resistance Determination in a Silicon Solar Cell: Effect of Flow Irradiation Energy and base Thickness

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Journal of Electromagnetic Analysis and Applications 2019年第12期11卷 203-216页

作者： Ousmane Sow mamadou lamine ba Hamet Yoro ba Mohamed Abderrahim Ould El Moujtaba Youssou Traore Masse Samba Diop Habiboullah Lemrabott mamadou Wade Grégoire Sissoko University Institute of Technology University of Thiès Thiès Sénégal Laboratory of Semiconductors and Solar Energy Physics Department Faculty of Science and Technology University Cheikh Anta Diop Dakar Senegal Ecole Polytechnique de Thiès Thiès Sénégal

The concept of the recombination of the minority carrier’s recombination velocity at the junction and in the rear, is used for determination, optimum thickness and then shunt resistance in the base of the silicon solar cell, maintained in steady state and under energy from the irradiation flow of charged particles. Resistance shunt is obtained and modeled through a relationship expressed according to the flow and energy of irradiation imposed on the solar cell.

关键词： Silicon Solar Cell Irradiation Recombination Velocity Shunt Resistance Optimum base Thickness

A.C. Recombination Velocity as Applied to Determine n+/p/p+Silicon Solar Cell base Optimum Thickness

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Energy and Power Engineering 2020年第10期12卷 543-554页

作者： Amadou Mar Ndiaye Sega Gueye Ousmane Sow Gora Diop Amadou Mamour ba mamadou lamine ba Ibrahima Diatta Lemrabott Habiboullah Gregoire Sissoko Laboratory of Semiconductors and Solar Energy Physics Department Faculty of Science and Technology University Cheikh Anta Diop Dakar Senegal University Institute of Technology University of Thiès Thiès Senegal Ecole Supérieure Polytechnique de Nouakchott Département Génie Electrique Nouackchott Mauritanie

This work deals with determining the optimum thickness of the base of an n+/p/p+ silicon solar cell under monochromatic illumination in frequency modulation. The continuity equation for the density of minority carriers generated in the base, by a monochromatic wavelength illumination (λ), with boundary conditions that impose recombination velocities (Sf) and (Sb) respectively at the junction and back surface, is resolved. The ac photocurrent is deduced and studied according to the recombination velocity at the junction, to extract the mathematical expressions of recombination velocity (Sb). By the graphic technique of comparing the two expressions obtained, depending on the thickness (H) of the base, for each frequency, the optimum thickness (Hopt) is obtained. It is then modeled according to the frequency, at the long wavelengths of the incident light. Thus, Hopt decreases due to the low relaxation time of minority carriers, when the frequency of modulation of incident light increases.

关键词： Silicon Solar Cell Modulation Frequency Recombination Velocity base Thickness Wavelength

Diffusion Coefficient at Resonance Frequency as Applied to n+/p/p+ Silicon Solar Cell Optimum base Thickness Determination

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Journal of Electromagnetic Analysis and Applications 2020年第10期12卷 145-158页

作者： Amadou Mar Ndiaye Sega Gueye Mame Faty Mbaye Fall Gora Diop Amadou Mamour ba mamadou lamine ba Ibrahima Diatta Lemrabott Habiboullah Gregoire Sissoko Laboratory of Semiconductors and Solar Energy Physics Department Faculty of Science and Technology University Cheikh Anta Diop Dakar Senegal Ecole Polytechnique de Thiès Thiès Sénégal Département Génie Electrique Ecole Supérieure Polytechnique de Nouakchott Nouakchott Mauritanie

The modelling and determination of the geometric parameters of a solar cell are important data, which influence the evaluation of its performance under specific operating conditions, as well as its industrial development for a low cost. In this work, an n+/p/p+ crystalline silicon solar cell is studied under monochromatic illumination in modulation and placed in a constant magnetic field. The minority carriers’ diffusion coefficient (D(ω, B), in the (p) base leads to maximum values (Dmax) at resonance frequencies (ωr). These values are used in expressions of AC minority carriers recombination velocity (Sb(Dmax, H)) in the rear of the base, to extract the optimum thickness while solar cell is subjected to these specific conditions. Optimum thickness modelling relationships, depending respectively on Dmax, ωr and B, are then established, and will be data for industrial development of low-cost solar cells for specific use.

关键词： Silicon Solar Cell Resonance Frequency Magnetic Field Recombination Velocity base Thickness

Surface Recombination Concept as Applied to Determinate Silicon Solar Cell base Optimum Thickness with Doping Level Effect

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World Journal of Condensed Matter Physics 2019年第4期9卷 102-111页

作者： Masse Samba Diop Hamet Yoro ba Ndeye Thiam Ibrahima Diatta Youssou Traore mamadou lamine ba El Hadji Sow Oulymata Mballo Grégoire Sissoko Laboratory of Semiconductors and Solar Energy Physics Department Faculty of Science and Technology University Cheikh Anta Diop Dakar Senegal Laboratory of Sciences and Techniques of Water and Environment Polytechnic School of Thiès Thiès Senegal.

New expressions of back surface recombination of excess minority carriers in the base of silicon solar are expressed dependent on both, the thickness and the diffusion coefficient which is in relationship with the doping rate. The optimum thickness thus obtained from the base of the solar cell allows the saving of the amount of material needed in its manufacture without reducing its efficiency.

关键词： Silicon Solar Cell Surface Recombination Velocity Diffusion Coefficient Doping Rate base Thickness

AC Recombination Velocity in the back Surface of a Lamella Silicon Solar Cell under Temperature

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Journal of Modern Physics 2019年第10期10卷 1235-1246页

作者： Youssou Traore Ndeye Thiam Moustapha Thiame Amary Thiam mamadou lamine ba Marcel Sitor Diouf Ibrahima Diatta Oulymata Mballo El Hadji Sow mamadou Wade Grégoire Sissoko Laboratory of Semiconductors and Solar Energy Physics Department Faculty of Science and Technology University Cheikh Anta Diop Dakar Senegal Laboratory of Sciences and Techniques of Water and Environment Polytechnic School of Thiès Thiès Senegal University Assane SECK Ziguinchor Senegal

The ac recombination velocity of the excess minority carriers, in the back surface of a silicon solar cell with a vertical junction connected in series, is developed through Einstein’s law giving the diffusion coefficient of minority carriers according to temperature, through mobility. The frequency spectrum of both, amplitude and phase, are produced for the diffusion coefficient and the recombination velocity in the rear face, in order to identify the parameters of equivalent electric models.

关键词： Vertical Multi-Junctions Solar Cell AC back Surface Recombination Velocity Temperature Bode and Nyquist Diagrams

Lamella Silicon Solar Cell under Both Temperature and Magnetic Field: Width Optimum Determination

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Journal of Electromagnetic Analysis and Applications 2020年第4期12卷 43-55页

作者： Dibor Faye Sega Gueye Mor Ndiaye mamadou lamine ba Ibrahima Diatta Youssou Traore Masse Samba Diop Gora Diop Amadou Diao Gregoire Sissoko Laboratory of Semiconductors and Solar Energy Physics Department Faculty of Science and Technology University Cheikh Anta Diop Dakar Senegal

This work deals with determining the optimum thickness of the lamella wafer of silicon solar cell. The (p) base region makes up the bulk of the thickness of the wafer. This thickness has always been a factor limiting the performance of the solar cell, as it produces the maximum amount of electrical charges, contributing to the photocurrent. Determining the thickness of the wafer cannot be only mechanical. It takes into account the internal physical mechanisms of generation-diffusion-recombination of excess minority carriers. They are also influenced by external factors such as temperature and magnetic field. Under these conditions, magneto transport equation is required to be applied on excess minority carrier in lamella base silicon solar cell. It yields maximum diffusion coefficient which result on Lorentz law and Umklapp process. Then from photocurrent, back surface recombination velocity expressions are derived, both maximum diffusion coefficient and thickness dependent. The plot of the back surface recombination calibration curves as function of lamella width, leads to its maximum values, trough intercept points. Lamella optimum width is then obtained, both temperature and magnetic field dependent and expressed in relationships to show the required base thickness in the elaboration process.

关键词： Silicon Vertical Junction back Surface Recombination Velocity Magnetic Field Temperature Lamella Width