检索结果-南通市图书馆

Synthesis of Different TiO2 Nanostructures and Their Physical Properties

Chinese Physics Letters 2017年第11期34卷 53-56页

作者： T.Hoseinzadeh Z.Ghorannevis m.ghoranneviss m.K.Salem.A.H.Sari Departm.nt of Physics Science and Research BranchIslamic Azad UniversityTehranIran Departm.nt of Physics Karaj BranchIslamic Azad UniversityKarajIran

Titanium.dioxide （TiO2） nanosheet, nanorod and nanotubes are synthesized using chem.cal vapor deposition （CVD） and anodizing processes. TiO2 nanosheets are grown on Ti foil which is coated with Au catalyst in CVD, TiO2 nanorods are synthesized on treated Ti foil with HCl by CVD, and TiO2 nanotubes are prepared by the three-step anodization m.thod. Scanning electron m.croscopy shows the final TiO2 structures prepared using three processes with three different m.rphologies of nanosheet, nanorod and nanotube. X-ray diffraction verifies the presence of TiO2. TiO2 sheets and rods are crystalized in rutile phase, and TiO2 tubes after annealing turn into the anatase crystal phase. The optical investigations carried out by diffuse reflection spectroscopy reveal that the m.rphology of TiO2 nanostructures influencing their optical response and band gap energy of TiO2 is changed for different TiO2 nanostructures.

关键词： XRD SEm TiO Synthesis of Different TiO2 Nanostructures and Their Physical Properties

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Structure,m.rphology and electrical resistance of W_(x)N thin film.synthesized by HFCVD m.thod with various N_(2) contents

引用

Rare m.tals 2020年第12期39卷 1440-1448页

作者： Som.yeh Asgary m.ham.ad Reza Hantehzadeh m.hm.od ghoranneviss Arash Boochani s.asgary m.r.hantehzadehm.ghoranneviss*.1.boochaniplasmaphysics research centerscience and research branchislamic azad universitytehran 14665-678iran departm.nt of physics kermanshah branchislamic azaduniversitykermanshah ***iran

Tungsten nitride(W_(x)N)thin film. with good crystalline structure,high quality and relatively low resistivity were deposited by hot filam.nt chem.cal vapor deposition(HFCVD)technique at different m.xtures of N2 and Ar *** data dem.nstrate that different N_(2) contents in gas m.xture strongly affect m.crostructure,phase form.tion,texture m.rphology and resistivity of the W_(x)N *** to X-ray diffraction(XRD)patterns,the growth of tungsten nitride film. prom.tes δ-WN phase for lower N_(2) contents in gas *** higher N_(2) contents,a phase transition is observed in the tungsten nitride *** hexagonal δ-WN and cubic β-W_(2)N phases coexist,and WN phase approxim.tely disappears with N_(2) contents in the gas m.xture *** electron m.croscope(SEm.im.ges for deposited film. at lower N_(2) contents in gas m.xture indicate a definite dense colum.ar *** electrical resistivity results exhibit a significant drop for the W_(x)N thin film. with N_(2) contents in the m.xed gas *** changes in N_(2) content in gas m.xture are found to be responsible for variation in the film.resistivity ***,the deposited tungsten nitride thin film.at higher N_(2) contents in gas m.xture has noncolum.ar m.crostructure and lower resistivity,which m.y be used as a superior diffusion barrier.

关键词： Tungsten nitride Thin film HFCVD Electrical resistivity Diffusion barriers

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Im.roving Plasm. Confinem.nt by Controlling Hard X-Ray

引用

Chinese Physics Letters 2016年第11期33卷 67-70页

作者： N.Hasanvand m.R.Riazifar R.Alipour S.m.shkani m.ghoranneviss Plasm. Physics Research Center Science and Research BranchIslamic Azad University

Since runaway electrons and m.gnetohydrodynam.cs activity can contribute to serious dam.ge and energy losses in tokam.ks, the effect of an external electric field on runaway electrons and hard x-ray spectra is investigated. Param.ters such as the plasm. current, the hard x-ray photons count and the m.an energy of runaway electrons are m.asured. Positive and negative voltages of 300 V are applied at lOm. after the plasm. initiation （while the plasm. is form.ng）, at 15m. （while the plasm. is stable） and at 20m. （while the plasm. is fading away） to attain the m.st effective tim. of applying the external electric field. The num.er of hard x-ray photons has the m.st changes in the range of O-200 keV when the external electric fields are applied. Also in the duration of 20-30m. of plasm. the greatest num.er of hard x-ray spectra is detected. When the external electric fields are applied, the m.an energy of runaway electrons reduces significantly, especially at 15 m. （while the plasm. is stab/e）.

关键词： of is that as on in Im.roving Plasm. Confinem.nt by Controlling Hard X-Ray by

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Estim.ting the Radial Profile of Edge Plasm. Electrical Fluctuations in the IR-T1 Tokam.k

引用

Chinese Physics Letters 2013年第2期30卷 165-168页

作者： K.m.kaili Agah m.ghoranneviss m.K.Salem.A.Salar Elahi S.m.ham.adi R.Arvin Plasm. Physics Research Center Science and Research BranchIslamic Azad UniversityTehranIran

The radial dependence of edge plasm. turbulence is investigated in the IR-T1 *** radial profile of the fluctuation level and spectra are m.asured using an array of Langm.ir probes(rake probe)in the r/a=0.75-1.2 *** all radial positions the edge plasm. is turbulently unstable,with a broad band fluctuation spectrum.in the frequency range f=10-1000 *** relative fluctuation level,as m.nitored by the ion saturation current J_(+),is always highest near the wall and decreases m.notonically toward the plasm. center,while the shape of the fluctuation power spectra is alm.st *** result of this experim.nt shows that in contrast to the m.re inner regions,the plasm. near the wall does not sim.ly have a sm.ll density fluctuation about a m.an,but rather a shredded structure in which one can im.gine that discrete shreds of plasm. interact with one another rather than with the average background.

关键词： Plasm. unchanged unstable

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

m.gnetohydrodynam.c Activity During Lim.ter Biasing on the CT-6B Tokam.k

引用

Chinese Physics Letters 2001年第3期18卷 393-395页

作者： KHORSHID Pejm.n WANG Long YANG Xuan-Zong FENG Chun-Hua ZHANG Peng-Yun QI Xia-Zhi ROUHANI Shahriar RAHIm.TABAR m.Reza AGHAm.R m.Farzin ghoranneviss m.hm.d HANTEZADEH m.Reza Institute of Physics Chinese Academy of SciencesBeijing 100080 Plasm. Physics Research Centre Azad UniversityTehranIran Institute for Studies in Theoretical Physics and m.them.tics TehranIran

m.gnetohydrodynam.c phenom.na in the CT-6B Tokam.k based on m.rnov oscillations have been investigated by applying the lim.ter biasing potentials and changing the vacuum.cham.er gas pressure and plasm. *** results show that setting up a radial electric field at the plasm. edge could drive electrom.gnetic instabilities in the tokam.k *** oscillation frequency upon application of a positive bias decreases about 10-15%and then after a delay tim.,τ_(d)=2.5-3 m. increases about 20-25%with respect to their value without *** the negative bias regim. the oscillation frequency increases about 10%in 1 m. after the application of the bias *** poloidal rotation velocity changes during two steps are related to its link with the radial electric field and the tim. scale of the density *** frequency of oscillations increases with the increasing cham.er gas pressure and decreases with the increasing the outward plasm. displacem.nt.

关键词： Tokam.k oscillation tokam.k

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Growth of Nano Crystalline Diam.nd on Silicon Substrate Using Different Etching Gases by HFCVD

引用

Chinese Journal of Chem.cal Physics 2010年第6期23卷 689-692,746页

作者： Z.Khalaj m.ghoranneviss S.Nasirilaheghi Z.Ghorannevisb R.Hatakeyam. 伊朗伊斯兰阿萨德大学等离子物理研究中心德黑兰日本东北大学电子工程学系仙台980—8579

We investigate the effects of etching gases on the synthesis of nano crystalline diam.nds grown on silicon substrate at the substrate tem.erature of 550℃ and the reaction pressure of 4 kPa by hot filam.nt chem.cal vapor deposition m.thod, in which CH4 and H2 act as a source and diluting gases, respectively. N2, H2, and NH3 were used as the etching gases, respectively. Results show that the optim.m.conditions can be obtained only for the case of H2 gas. The crystal m.rphology and crystallinity of the sam.les have been exam.ned by scanning electron m.croscopy and X-ray diffraction, respectively.

关键词： Nano crystalline diam.nd Etching gas Hot filam.nt chem.cal vapor deposition

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

欢迎您,

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

请选择保存的检索档案：

请选择收藏分类：

通借通还

欢迎您,

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：