Structure,morphology and electrical resistance of W_(x)N thin film synthesized by HFCVD method with various N_(2) contents

作     者：Somayeh Asgary Mohammad Reza Hantehzadeh Mahmood Ghoranneviss Arash Boochani Somayeh Asgary;Mohammad Reza Hantehzadeh;Mahmood Ghoranneviss;Arash Boochani

作者机构：s.asgarym.r.hantehzadehm.ghoranneviss*.1.boochaniplasmaphysics research centerscience and research branchislamic azad universitytehran 14665-678iran department of physicskermanshah branchislamic azaduniversitykermanshah ***iran 

出 版 物：《Rare Metals》 (稀有金属（英文版）)

年 卷 期：2020年第39卷第12期

页      面：1440-1448页

核心收录：

学科分类：081702[工学-化学工艺] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0817[工学-化学工程与技术] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

主　　题：Tungsten nitride Thin film HFCVD Electrical resistivity Diffusion barriers 

摘      要：Tungsten nitride(W_(x)N)thin films with good crystalline structure,high quality and relatively low resistivity were deposited by hot filament chemical vapor deposition(HFCVD)technique at different mixtures of N2 and Ar *** data demonstrate that different N_(2) contents in gas mixture strongly affect microstructure,phase formation,texture morphology and resistivity of the W_(x)N *** to X-ray diffraction(XRD)patterns,the growth of tungsten nitride films promotes δ-WN phase for lower N_(2) contents in gas *** higher N_(2) contents,a phase transition is observed in the tungsten nitride *** hexagonal δ-WN and cubic β-W_(2)N phases coexist,and WN phase approximately disappears with N_(2) contents in the gas mixture *** electron microscope(SEM)images for deposited films at lower N_(2) contents in gas mixture indicate a definite dense columnar *** electrical resistivity results exhibit a significant drop for the W_(x)N thin films with N_(2) contents in the mixed gas *** changes in N_(2) content in gas mixture are found to be responsible for variation in the film resistivity ***,the deposited tungsten nitride thin film at higher N_(2) contents in gas mixture has noncolumnar microstructure and lower resistivity,which may be used as a superior diffusion barrier.