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Light-emitting field-effect transistors with EQE over 20%enabled by a dielectric-quantum dots-dielectric sandwich structure

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Science Bulletin 2022年第5期67卷 529-536,M0004页

作者： Lingmei Kong Jialong Wu Yunguo Li Fan Cao Feijiu Wang Qianqian Wu Piaoyang Shen Chengxi Zhang Yun Luo Lin Wang lyudmila turyanska Xingwei Ding Jianhua Zhang Yongbiao Zhao Xuyong Yang Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai UniversityShanghai 200072China CAS Key Laboratory of Crust-Mantle Materials and Environments School of Earth and Space SciencesUniversity of Science and Technology of ChinaHefei 230026China Henan Key Laboratory of Photovoltaic Materials Henan UniversityKaifeng 475004China Faculty of Engineering University of NottinghamNottingham NG72RDUK Center for Optoelectronic Engineering Research Department of PhysicsSchool of Physics and AstronomyYunnan UniversityKunming 650091China

Emerging quantum dots(QDs)based light-emitting field-effect transistors(QLEFETs)could generate light emission with high color purity and provide facile route to tune optoelectronic properties at a low fabrication *** efforts have been devoted to designing device structure and to understanding the underlying physics,yet the overall performance of QLEFETs remains low due to the charge/exciton loss at the interface and the large band offset of a QD layer with respect to the adjacent carrier transport ***,we report highly efficient QLEFETs with an external quantum efficiency(EQE)of over 20%by employing a dielectric-QDs-dielectric(DQD)sandwich *** DQD structure is used to control the carrier behavior by modulating energy band alignment,thus shifting the exciton recombination zone into the emissive ***,enhanced radiative recombination is achieved by preventing the exciton loss due to presence of surface traps and the luminescence quenching induced by interfacial charge *** DQD sandwiched design presents a new concept to improve the electroluminescence performance of QLEFETs,which can be transferred to other material systems and hence can facilitate exploitation of QDs in a new type of optoelectronic devices.

关键词： Light-emitting field-effect transistors Quantum dots Electroluminescence External quantum efficiency

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In search of effective therapies to overcome resistance to Temozolomide in brain tumours

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Cancer Drug Resistance 2019年第4期2卷 1018-1031页

作者： Kaouthar Bouzinab Helen Summers Jihong Zhang Malcolm F.G.Stevens Christopher J.Moody lyudmila turyanska Neil R.Thomas Pavel Gershkovich Marianne B.Ashford Emily Vitterso Lisa C.D.Storer Richard Grundy Tracey D.Bradshaw School of Pharmacy University of NottinghamNottingham NG72RDUK School of Chemistry University of NottinghamNottingham NG72RDUK School of Physics and Astronomy University of NottinghamNottingham NG72RDUK Advanced Drug Delivery Pharmaceutical SciencesR&DAstraZenecaMacclesfield SK104TFUK School of Medicine Queen’s Medical CentreUniversity of NottinghamNottingham NG72UHUK.

Glioblastoma multiforme is the most common and lethal brain *** current standard of care includes Temozolomide(TMZ)***,inherent and acquired resistance to TMZ thwart successful *** direct repair protein methylguanine DNA methyltransferase(MGMT)removes the cytotoxic O6-methylguanine(O6-MeG)lesion delivered by TMZ and so its expression by tumours confers *** mismatch repair(MMR)is essential to process O6-MeG adducts and MMR-deficiency leads to tolerance of lesions,resistance to TMZ and further DNA *** this article,two strategies to overcome TMZ resistance are discussed:(1)synthesis of imidazotetrazine analogues-designed to retain activity in the presence of MGMT or loss of MMR;(2)preparation of imidazotetrazine-nanoparticles to deliver TMZ preferably to the brain and tumour *** promising results encourage belief in a future where better prognoses exist for patients diagnosed with this devastating disease.

关键词： Brain cancer temozolomide-resistance analogues drug delivery apoferritin

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