Light-emitting field-effect transistors with EQE over 20%enabled by a dielectric-quantum dots-dielectric sandwich structure

作     者：Lingmei Kong Jialong Wu Yunguo Li Fan Cao Feijiu Wang Qianqian Wu Piaoyang Shen Chengxi Zhang Yun Luo Lin Wang Lyudmila Turyanska Xingwei Ding Jianhua Zhang Yongbiao Zhao Xuyong Yang 孔令媚;吴家龙;李云国;曹璠;王飞久;吴倩倩;申飘阳;张成喜;罗云;王林;Lyudmila Turyanska;丁星伟;张建华;赵勇彪;杨绪勇

作者机构：Key Laboratory of Advanced Display and System Applications of Ministry of EducationShanghai UniversityShanghai 200072China CAS Key Laboratory of Crust-Mantle Materials and EnvironmentsSchool of Earth and Space SciencesUniversity of Science and Technology of ChinaHefei 230026China Henan Key Laboratory of Photovoltaic MaterialsHenan UniversityKaifeng 475004China Faculty of EngineeringUniversity of NottinghamNottingham NG72RDUK Center for Optoelectronic Engineering ResearchDepartment of PhysicsSchool of Physics and AstronomyYunnan UniversityKunming 650091China 

出 版 物：《Science Bulletin》 (科学通报（英文版）)

年 卷 期：2022年第67卷第5期

页      面：529-536,M0004页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：support from the National Natural Science Foundation of China(62174104,61735004,and 12174086) the National Key Research and Development Program of China(2016YFB0401702) the Shanghai Science and Technology Committee(19010500600) 

主　　题：Light-emitting field-effect transistors Quantum dots Electroluminescence External quantum efficiency 

摘      要：Emerging quantum dots(QDs)based light-emitting field-effect transistors(QLEFETs)could generate light emission with high color purity and provide facile route to tune optoelectronic properties at a low fabrication *** efforts have been devoted to designing device structure and to understanding the underlying physics,yet the overall performance of QLEFETs remains low due to the charge/exciton loss at the interface and the large band offset of a QD layer with respect to the adjacent carrier transport ***,we report highly efficient QLEFETs with an external quantum efficiency(EQE)of over 20%by employing a dielectric-QDs-dielectric(DQD)sandwich *** DQD structure is used to control the carrier behavior by modulating energy band alignment,thus shifting the exciton recombination zone into the emissive ***,enhanced radiative recombination is achieved by preventing the exciton loss due to presence of surface traps and the luminescence quenching induced by interfacial charge *** DQD sandwiched design presents a new concept to improve the electroluminescence performance of QLEFETs,which can be transferred to other material systems and hence can facilitate exploitation of QDs in a new type of optoelectronic devices.