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Realization of a tunable analog predistorter using parallel combination technique for laser driver applications

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High Technology Letters 2015年第1期21卷 90-95页

作者：宋奇伟 mao luhong Xie Sheng Zhang Shilin School of Electronic Information Engineering Tianjin University

This paper describes a new approach for designing analog predistorters that can compensate for the nonlinear distortion of laser drivers in a radio-over-fiber （RoF） system. In contrast to previous works, this paper analyzes the transfer characteristics of CMOS transistors, by combining parallel currents of CMOS transistors in various W/L and negative bias voltages to realize the tunable analog predistortion function. The circuit is fabricated by a standard 0.18txm CMOS technology. The core circuit current consumption is only 15mA and the entire driver circuit works in a band-pass from 1 - 2.2GHz. Experimental results of two-tone tests have shown that with an analog predistortoer the IIP3 of the laser driver circuit has an improvement of 4.91 dB.

关键词： radio-over-fiber (RoF) nonlinear analog predistorter parallel combination MOS transistor

Design, Fabrication, and Modeling of CMOS-Compatible Double Photodiode

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Transactions of Tianjin University 2017年第2期23卷 163-167页

作者： Sheng Xie Xuetao Luo luhong mao Haiou Li School of Microelectronics Tianjin University Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin University of Electronic Technology

A double photodiode (PD) constructed by p+/N-well junction and N-well/p-sub junction was designed and fabricated in a UMC 0.18-μm CMOS process. Based on the device structure and mechanism of double PD, a novel small-signal equivalent circuit model considering the carrier transit effect and the parasitic RC time constant was presented. By this model with complete electronic components, the double PD can be incorporated in a commercial circuit simulator. The component values were extracted by fitting the measured S-parameters using simulated annealing algorithm, and a good agreement between the measurement and the simulation results was achieved. © 2017, Tianjin University and Springer-Verlag Berlin Heidelberg.

关键词： Circuit theory CMOS integrated circuits Equivalent circuits Heterojunction bipolar transistors Integrated circuit design Photodiodes Scattering parameters Simulated annealing

A 2 Gb/s optical receiver with monolithically integrated MSM photodetector in standard CMOS process

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Chinese Science Bulletin 2011年第21期56卷 2281-2285页

作者： XIAO XinDong ZHANG ShiLin mao luhong XIE Sheng CHEN Yan School of Electronic Information Engineering Tianjin UniversityTianjin 300072China

A monolithically standard complementary-metal-oxide-semiconductor (CMOS) optical receiver with a metal-semiconductor-metal (MSM) photodetector is presented in this *** active-feedback transimpedance amplifier (TIA) with negative Miller capacitance is used to increase the bandwidth of the *** MSM photodetector with high responsivity provides higher sensitivity for the optical *** optical receiver implemented in chartered 0.35 μm process achieves a 1.7 GHz bandwidth due to the low capacitance of the MSM photodetector.2 Gb/s optical data are successfully transmitted with a bit-error rate of 10-9 at an optical power of-15 *** power consumption of the receiver is 94 mW under a single 3.3 V supply.

关键词： MSM光探测器 CMOS工艺光接收器光电探测器单片集成互补金属氧化物半导体 Gb 标准

A novel portable transmitter with 8 dBm output power for wireless communication equipments

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High Technology Letters 2014年第1期20卷 103-109页

作者：张艳征 mao luhong Zhou Xiaoqiu Zhang Shilin Deng Jianbao Xie Sheng School of Electronic and Information Engineering Tianjin University China Air-borne Missile Academy

In this paper,a portable 2.42 GHz transmitter for wireless communication systems,with 8dBm output power and small size is *** novel features exist in this ***,power consumption and output are balanced by introducing a differential oscillator with input signal controlled biasing,which acts as both a carrier generator and an OOK ***,power consumption of the transmitter is reduced by the OOK modulated signal via switching the oscillator and the power amplifier at the same ***,the area size is also reduced by a class-AB power amplifier,which uses the PCB antenna as the resonance *** these features,the total chip area is reduced to 670μm×740μm(In a 0.18μm CMOS process).

关键词： transmitter OOK modulator power amplifier CMOS 2.42GHz

Design and Realization of InP/AlGaInAs MultipleQuantum Well Ring Laser

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Transactions of Tianjin University 2014年第6期20卷 402-406页

作者： Xie Sheng Guo Jing Guan Kun mao luhong Guo Weilian Qi Lifang Li Xianjie School of Electronic In formation Engineering Tianjin UniversityTianjin 300072China The 13th Research Institute of China Electronic Technology Group Corporation Shijiazhuang 050051China

Using beam propagation method （BPM）, key optical design parameters of InP/AlGaInAs multiple quantumwell （MQW） ring laser were numerically analyzed. The influences of waveguide dimensions, curvature radiusand gap size on the coupling efficiency were discussed. An InP/AlGaInAs MQW ring laser with radius of 350 μm wasdesigned and realized. The experimental results show that the designed device, lasing at 1 563.2 nm with side modesuppression ratio higher than 20 dB, exhibited unidirectional bistability between the clockwise and counterclockwisemodes.

关键词： semiconductor laser multiple quantum well optical bistability AlGaInAs

A novel lambda negative-resistance transistor in the 0.5 μm standard CMOS process

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Chinese Science Bulletin 2012年第7期57卷 716-718页

作者： Yan Chen luhong mao WeiLian Guo Xin Yu ShiLin Zhang Sheng Xie School of Electronic Information Engineering Tianjin University Tianjin China

A novel negative-resistance transistor (NRT) with a Lambda shaped I-V characteristic is demonstrated in the 0.5 μm standard CMOS process. To save on the number of component devices, this device does not use standard device models provided by CMOS processes, but changes a MOSFET and a BJT into a single device by fabricating them in the same n-well, with a p-type base layer as the MOSFET's substrate. The NRT has a low valley current of -6.82 nA and a very high peak-to-valley current ratio of 3591. The peak current of the device is -24.49 μA which is low enough to reduce the power consumption of the deivce, and the average value of its negative resistance is about 32 kΩ. Unlike most negative-resistance devices which have been fabricated on compound semiconductor substrates in recent years, this novel NRT is based on a silicon substrate, compatible with mainstream CMOS technology. Our NRT dramatically reduces the number of devices, minimizing the area of the chip, has a low power consumption and thus a further reduction in cost.

关键词： CMOS工艺负阻晶体管 lambda 使用标准 MOSFET 设备型号化合物半导体 CMOS技术

AlGaInAs multi-quantum wells ring laser with optical coupling waveguides

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Chinese Science Bulletin 2009年第20期54卷 3716-3719页

作者： LI XianJie QI LiFang GUO WeiLian YU JinLong ZHAO YongLin CAI DaoMin YIN ShunZheng mao luhong 13th Institute of China Electronic Technology Group Corporation Shijiazhuang 050051 China School of Electronic Information Engineering Tianjin University Tianjin 300072 China

Based on InAlGaAs multi-quantum wells epitaxy structure for Fabry-Pero laser diode,a multi-quantum wells semiconductor ring laser is realized using ICP dry etching process and polyimide planarization *** laser is generated in a semiconductor resonator ring and is output by two coupled integrated bus *** ring diameter is 700 μm and the width of the waveguide is 3 μ*** output optical power-current(P-I) characteristic and the wavelength spectra of the ring laser are measured using a fiber coupled to the cleaved facet of the bus *** threshold current of the device is 120 mA and the wavelength is 1602 nm at an injected current of 160 *** addition,the operation mode for the laser in the resonator ring is roughly discussed based on the P-I characteristic plot.

关键词：波导激光器多量子阱量子阱半导体激光器耦合环光学输出电流耦合波导激光波长

A fully differential transimpedance amplifier with integrated differential photodetector in standard CMOS process for optical communications and interconnects

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Science China(Information Sciences) 2011年第6期54卷 1300-1311页

作者： YU ChangLiang , mao luhong, XIAO XinDong & ZHANG ShiLin School of Electronic Information Engineering, Tianjin University, Tianjin 300072, China School of Electronic Information Engineering Tianjin University Tianjin China

A fully differential transimpedance amplifier (TIA) with integrated differential photodetector in standard CMOS technologies has been realized for optical receivers in optical communications and optical interconnects. And a novel, fully differential photodetector aiming to convert the incident light into a pair of fully differential photo-generated currents and ensure the differential symmetry on circuit configuration and model has also been proposed for the differential TIA to achieve the fully differential characteristic. Theoretical analysis and simulation results both indicate that the fully differential TIA reaches a higher bandwidth than a conventional one and at the same time a doubled sensitivity. Based on this new TIA, a monolithic, fully differential optoelectronic integrated receiver was designed and implemented in a Chartered 3.3 V, 0.35 μm standard CMOS process. It demonstrates 98.75 dB transimpedance gain, and 0.334 μA equivalent input integrated referred noise current from 1 Hz up to 3 dB frequency. The power dissipation from a single 3.3 V supply is 100 mW for the TIA-LIA (limiting amplifier)-combination plus 138 mW for the 50 output buffer. At 850 nm wavelength, the optical receiver achieves a 1.1 GHz 3 dB bandwidth, and can handle bitrates up to 1.6 Gbit/s for 12.2 dBm peak-peak optical power and 2 31 1 PRBS (pseudorandom bit sequency) input signal.

关键词： transimpedance amplifier (TIA) photodetector CMOS optical receiver monolithic integrated circuits

Circular Loop Antenna for UHF RFID Tags with Inductively Coupled Structure

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Circular Loop Antenna for UHF RFID Tags with Inductively Cou...