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A 65-nm 1-Gb NOR floating-gate flash memory with less than 50-ns access time

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Chinese Science Bulletin 2014年第29期59卷 3935-3942页

作者： Yu Wang Zongliang Huo Huamin Cao Ting Li Jing Liu liyang pan Xing Zhang Yun Yang Shenfeng Qiu Hanming Wu Ming Liu Laboratory of Nano-fabrication and Novel Device Integration Institute of MicroelectronicsChinese Academy of Sciences Institute of Microelectronics Tsinghua University Institute of Microelectronics Peking University Semiconductor Manufacturing International Corporation

This paper presents a 65-nm 1-Gb NOR-type floating-gate flash memory,in which the cell device and chip circuit are developed and optimized.In order to solve the speed problem of giga-level NOR flash in the deep submicron process,the models of long bit-line and word-line are first given,by which the capacitive and resistive loads could be estimated.Based on that,the read path and key modules are optimized to enhance the chip access property and reliability.With the measurement results,the flash memory cell presents good endurance and retention properties,and the macro is operated with 1-ls/byte program speed and less than 50-ns read time under 3.3 V supply.

关键词： NOR闪存访问时间 GB 浮栅 ns 深亚微米工艺芯片电路速度问题

2016—2022年大连市土源性线虫病监测分析报告

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预防医学情报杂志 2024年第1期40卷 6-10页

作者：毛丽翠王德正潘立阳大连市疾病预防控制中心辽宁大连116033

目的了解大连市土源性线虫感染情况,为制定防控措施提供科学依据。方法2016—2022年每年在大连市选择1个县作为监测点,按地理方位划分为东、西、南、北和中5个片区,采取整群抽样的方法,在每片区随机抽取1个行政村开展监测,每个行政村至... 详细信息

目的了解大连市土源性线虫感染情况,为制定防控措施提供科学依据。方法2016—2022年每年在大连市选择1个县作为监测点,按地理方位划分为东、西、南、北和中5个片区,采取整群抽样的方法,在每片区随机抽取1个行政村开展监测,每个行政村至少调查200人,每个监测县至少调查1000人。采用改良加藤厚涂片法(Kato-Katz)检查土源性线虫卵感染情况(一粪二检)。感染率的比较采用χ^(2)检验,检验水准为α=0.05。结果累计粪检7005人,检出土源性线虫感染者32人,感染率为0.46%,感染虫种仅有蛔虫和鞭虫。男性和女性感染率无差异(χ^(2)=0.003,P=0.958);各年龄组感染率差异无统计学意义(χ^(2)=13.638,P=0.092),但50岁以上年龄组感染率高于50岁以下人群(χ^(2)=7.958,P=0.005);感染者职业仅有农民和工人,农民的感染率高于工人,差异无统计学意义(χ^(2)=1.492,P=0.222);文化程度间感染率差异无统计学意义(χ^(2)=8.006,P=0.091);各地区之间感染率差异无统计学意义(χ^(2)=6.058,P=0.195),金普新区不同年度之间感染率差异无统计学意义(χ^(2)=4.333,P=0.228)。结论大连市已经达到土源性线虫传播控制标准,今后应动态连续开展监测工作,加强土源性线虫镜检技术培训。

关键词：土源性线虫监测感染率大连

High Speed Sense Amplifier Circuit for Low-Voltage SONOS Memory Systems

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High Speed Sense Amplifier Circuit for Low-Voltage SONOS Mem...

Performance and Reliability Feature of Nanocrystal Memory Devices

2005 6th International Conference on ASIC

作者： Guangjun yang liyang pan Dong wu Jun zhu Institute of Microelectronics Tsinghua University

ISBN: (纸本)0780392108;9780780392106;0780392108;9780780392106

＜正＞In this paper,a new high speed sense amplifier with high voltage driven load and inner multiple power supplies techniques for 0.9V power supply embedded SONOS memory systems is proposed.High voltage driven load technique is introduced to increase the voltage swing on the data-line and to improve the sensing speed.Inner multiple power supplies technique is adopted to improve sensing speed by increasing the input range and the comparing speed of comparator under low power supply.The sense amplifier was implemented in CMOS compatible embedded SONOS technology.Simulation results show that the sensing delay is 1.7ns under the typical condition with 0.9V power supply.

关键词： SONOS devices Power supplies Threshold voltage High power amplifiers Delay Circuit noise Decoding Charge pumps Circuit topology Mirrors

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Performance and Reliability Feature of Nanocrystal Memory De...

A 1G-cell floating-gate NOR flash memory in 65 nm technology with 100 ns random access time

2006 8th International Conference on Solid-State and Integrated Circuit Technology

作者： Liudi Wang Zhigang Zhang Ying Zeng Yue Zhao Xiang Zhang liyang pan Jun Zhu Institute of Microelectronics Tsinghua University

In this paper,we analyzed the performance and reliability feature of the NMOS transistors containing nanocrystals in the gate.The silicon Nanocrystals were grown by annealing a SiO/SiO/SiO structure in N atmosphere for one hour and the nanocrystal MOSFETs were processed with standard CMOS technology. Programming and erasing characteristics are performed before and after cycling,and the charge-loss characteristics is also analyzed.A threshold voltage window of about 1V can be achieved and milliseconds programming and erasing time is required.Result indicated that stress induced leakage current(SILC) is the main reason for the discharge and lateral tunneling.

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Science China(Information Sciences) 2015年第4期58卷 158-165页

作者： LIU LiFang WU Dong LIU XueMei HUO ZongLiang LIU Ming pan liyang Institute of Microelectronics University of Tsinghua Tsinghua National Laboratory for Information Science and Technology Laboratory of Nano-Fabrication and Novel Devices Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences

A 1G-cell NOR flash memory chip has been designed and fabricated successfully with 65 nm technology. To compromise the array efficiency and chip speed, the paper establishes an array model including parasitics of the whole array, and optimizes the sector structure as 512 wordlines(WLs) and 4096 bitlines(BLs).Furthermore, by adding other models of long and thin metal lines, we have analyzed the speed of critical circuit nodes. As a result, the agreement of WL delay between simulation and measurement verifies the accuracy of the array model and lines models. The test results indicate that the chip achieves random access time of 100 ns and page read time of 25 ns under 3.3 V voltage supply.

关键词： NOR flash memory giga-level 65 nm technology array efficiency high speed

Total ionizing radiation effects of 2-T SONOS for 130 nm/4 Mb NOR flash memory technology

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Science China(Information Sciences) 2014年第6期57卷 173-181页

作者： QIAO FengYing pan liyang YU Xiao MA HaoZhi WU Dong XU Jun Institute of Microelectronics Tsinghua University Tsinghua National Laboratory for Information Science and Technology

In this paper,we have studied the total ionizing dose(TID)radiation response up to 2 Mrad(Si)of silicon-oxide-nitride-oxide-silicon(SONOS)memory cells and memory circuits,fabricated in a 130 nm complimentary metal-oxide-semiconductor(CMOS)SONOS technology.We explored the threshold voltage(VT)degradation mechanism and found that the VT shifts of SONOS cells depend on the charge state;simply programming the cell to a higher VT cannot compensate for the radiation induced VT loss.The off-state current(Ioff)increase in the SONOS cell is also studied in this paper.Both VT and Ioffdegradation would affect the memory system.Read data failures are mainly caused by VT shifts under irradiation,and program and erase failures are mainly caused by increased Ioff,which overloads the charge pumping circuit.By varying the reference current,our 4 Mb NOR flash chip has the potential to survive a radiation dose of 1 Mrad(Si)in read mode.

关键词： silicon-oxide-nitride-oxide-silicon SONOS total ionizing dose TID flash memory radiation effects 130 nm

Discussion on the CHE Programming Characteristics with the Scaling Down of Charge Trapping Flash Memory

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Discussion on the CHE Programming Characteristics with the S...

2006 8th International Conference on Solid-State and Integrated Circuit Technology

作者： Lei Sun liyang pan Xian Luo Dong Wu Jun Zhu Institute of Microelectronics Tsinghua University

ISBN: (纸本)1424401607

＜正＞The scaling down issues in the charge trapping memory are investigated in this work.In the sub-100 nm devices,the punch-through problem,as well as high program voltage and electrical field limitation are studied by device simulation and measurement.We found CHE program mechanism will eventually meet certain limitation in the future short channel devices. Furthermore,program induced charge distribution is extracted by a charge pumping method,and the related problems to the multi-bit application is discussed.

关键词： CHARGE TRAPPING Scale formation Dental Scaling Scaling Charge pumps flash memories Northern Ireland FLUFF Debates Programming induced charge CHARGE DISTRIBUTION

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抗磷脂抗体与狼疮性肾炎的相关性研究

中国免疫学杂志 2022年第24期38卷 3035-3038,3043页

作者：于淼琛姜艳梅潘立阳王贞段梦夕大连医科大学附属第一医院检验科大连116011 大连市疾病预防控制中心传染病地方病防制所大连116011

目的:探讨抗心磷脂抗体(aCL)IgG、IgM、抗β2-糖蛋白1(β2-GP1)抗体IgG、IgM及其他指标与狼疮性肾炎(LN)和系统性红斑狼疮(SLE)的相关性。方法:检测LN及无肾脏累及的SLE患者aCL(IgG、IgM)、抗β2-GP1抗体(IgG、IgM)、C3、C4、抗ds-DNA... 详细信息

目的:探讨抗心磷脂抗体(aCL)IgG、IgM、抗β2-糖蛋白1(β2-GP1)抗体IgG、IgM及其他指标与狼疮性肾炎(LN)和系统性红斑狼疮(SLE)的相关性。方法:检测LN及无肾脏累及的SLE患者aCL(IgG、IgM)、抗β2-GP1抗体(IgG、IgM)、C3、C4、抗ds-DNA抗体、肌酐、尿蛋白等指标,判断其与LN和SLE疾病相关程度。结果:LN组与无肾脏累及的SLE组患者肌酐、尿蛋白定量和IgG型抗β2-GP1差异有统计学意义(P=0.005、P=0.000、P=0.003);IgG、IgM型aCL、IgM型抗β2-GP1抗体阳性率、抗ds-DNA抗体、C3、C4水平差异无统计学意义(P>0.05)。进一步对SLEDAI评分分组,LN组IgG型aCL(P=0.048,r=0.318)与LN疾病活动呈弱正相关,而C3(P=0.005,r=-0.439)与LN疾病活动呈中等程度的负相关;LN组IgM型aCL、IgG、IgM型抗β2-GP1抗体浓度、尿蛋白定量、抗ds-DNA抗体、C4、肌酐水平与疾病活动程度无相关性(P>0.05)。无肾脏累及的SLE组以上各项指标与疾病活动程度均无相关性(P>0.05)。结论:LN患者血清中C3、IgG型aCL与疾病进展相关,可作为LN疾病诊治过程中的辅助诊断指标。

关键词：狼疮性肾炎系统性红斑狼疮抗磷脂抗体相关性

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基于共享技术的电荷泵电路

清华大学学报（自然科学版） 2006年第4期46卷 530-533页

作者：伍冬潘立阳段志刚朱钧清华大学微电子学研究所北京100084

为了减少芯片面积,提高电荷泵的增益,提出一种基于共享技术的电荷泵电路。通过改变两个子电荷泵的串并连接关系,既可以产生一种电压较高而电流驱动能力较小的负高压,也可以产生一种电压较低但是电流驱动能力很大的负高压,这不仅满足了... 详细信息

为了减少芯片面积,提高电荷泵的增益,提出一种基于共享技术的电荷泵电路。通过改变两个子电荷泵的串并连接关系,既可以产生一种电压较高而电流驱动能力较小的负高压,也可以产生一种电压较低但是电流驱动能力很大的负高压,这不仅满足了系统在编程和擦除时对高压的不同需求,而且还节省了大约50%的芯片面积。电荷泵电路还采取了对其中P型M O S管的衬底电压进行动态控制的方法。模拟结果表明,该电荷泵的增益提高了大约14%。该电路特别适用于需要两种以上负高压以完成编程和擦除操作的快闪存储器。

关键词：电荷泵共享快闪存储器驱动能力