Total ionizing radiation effects of 2-T SONOS for 130 nm/4 Mb NOR flash memory technology

作     者：QIAO FengYing PAN LiYang YU Xiao MA HaoZhi WU Dong XU Jun 

作者机构：Institute of MicroelectronicsTsinghua University Tsinghua National Laboratory for Information Science and Technology 

出 版 物：《Science China(Information Sciences)》 (中国科学:信息科学(英文版))

年 卷 期：2014年第57卷第6期

页      面：173-181页

核心收录：

学科分类：08[工学] 081201[工学-计算机系统结构] 0812[工学-计算机科学与技术（可授工学、理学学位）] 

基　　金：supported by National Basic Research Program of China(Grant No.2011CBA00602) National Natural Science Foundation of China(Grant Nos.61106102,61176033) 

主　　题：silicon-oxide-nitride-oxide-silicon SONOS total ionizing dose TID flash memory radiation effects 130 nm 

摘      要：In this paper,we have studied the total ionizing dose(TID)radiation response up to 2 Mrad(Si)of silicon-oxide-nitride-oxide-silicon(SONOS)memory cells and memory circuits,fabricated in a 130 nm complimentary metal-oxide-semiconductor(CMOS)SONOS *** explored the threshold voltage(VT)degradation mechanism and found that the VT shifts of SONOS cells depend on the charge state;simply programming the cell to a higher VT cannot compensate for the radiation induced VT *** off-state current(Ioff)increase in the SONOS cell is also studied in this *** VT and Ioffdegradation would affect the memory *** data failures are mainly caused by VT shifts under irradiation,and program and erase failures are mainly caused by increased Ioff,which overloads the charge pumping *** varying the reference current,our 4 Mb NOR flash chip has the potential to survive a radiation dose of 1 Mrad(Si)in read mode.