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Synthetic auxotrophs accelerate cell factory development through growth-coupled models

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Frontiers of Chemical Science and Engineering 2024年第9期18卷 73-87页

作者： Liangpo Li linwei yu Xinxiao Sun Qipeng yuan Xiaolin Shen Jia Wang State Key Laboratory of Chemical Resource Engineering Beijing University of Chemical TechnologyBeijing 100029China

The engineering of microbial cell factories for the production of high-value chemicals from renewable resources presents several challenges,including the optimization of key enzymes,pathway fluxes and metabolic *** these challenges involves the development of synthetic auxotrophs,a strategy that links cell growth with enzyme properties or biosynthetic *** linkage allows for the improvement of enzyme properties by in vivo directed enzyme evolution,the enhancement of metabolic pathway fluxes under growth pressure,and remodeling of metabolic networks through directed strain *** advantage of employing synthetic auxotrophs lies in the power of growth-coupled selection,which is not only high-throughput but also labor-saving,greatly simplifying the development of both strains and *** auxotrophs play a pivotal role in advancing microbial cell factories,offering benefits from enzyme optimization to the manipulation of metabolic networks within single ***,this strategy extends to coculture systems,enabling collaboration within microbial *** review highlights the recently developed applications of synthetic auxotrophs as microbial cell factories,and discusses future perspectives,aiming to provide a practical guide for growth-coupled models to produce value-added chemicals as part of a sustainable biorefinery.

关键词： synthetic auxotrophs growth-coupled directed enzyme evolution pathway flux directed strain evolution coculture

Engineering in-plane silicon nanowire springs for highly stretchable electronics

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Journal of Semiconductors 2018年第1期39卷 2-15页

作者： Zhaoguo Xue Taige Dong Zhimin Zhu Yaolong Zhao Ying Sun linwei yu National Laboratory of Solid State Microstructures/School of Electronic Science and Engineering/Collaborative Innovation Center of Advanced Microstructures Nanjing University

Crystalline silicon（c-Si） is unambiguously the most important semiconductor that underpins the development of modern microelectronics and optoelectronics, though the rigid and brittle nature of bulk c-Si makes it difficult to implement directly for stretchable applications. Fortunately, the one-dimensional（1 D） geometry, or the line-shape, of Si nanowire（SiNW） can be engineered into elastic springs, which indicates an exciting opportunity to fabricate highly stretchable 1 D c-Si channels. The implementation of such line-shape-engineering strategy demands both a tiny diameter of the SiNWs, in order to accommodate the strains under large stretching, and a precise growth location, orientation and path control to facilitate device integration. In this review, we will first introduce the recent progresses of an in-plane self-assembly growth of SiNW springs, via a new in-plane solid-liquidsolid（IPSLS） mechanism, where mono-like but elastic SiNW springs are produced by surface-running metal droplets that absorb amorphous Si thin film as precursor. Then, the critical growth control and engineering parameters, the mechanical properties of the SiNW springs and the prospects of developing c-Si based stretchable electronics, will be addressed. This efficient line-shape-engineering strategy of SiNW springs, accomplished via a low temperature batch-manufacturing, holds a strong promise to extend the legend of modern Si technology into the emerging stretchable electronic applications, where the high carrier mobility, excellent stability and established doping and passivation controls of c-Si can be well inherited.

关键词： c-Si nanowires in-plane solid-liquid-solid self-assembly stretchable electronics

Channel-bias-controlled reconfigurable silicon nanowire transistors via an asymmetric electrode contact strategy

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Chip 2024年第3期3卷 8-14页

作者： Wentao Qian Junzhuan Wang Jun Xu linwei yu School of Electronic Science and Engineering/National Laboratory of Solid-State Microstructures Nanjing UniversityNanjing 210093China

Reconfigurable field-effect transistors(R-FETs)that can dynamically reconfigure the transistor polarity,from n-type to p-type channel or vice versa,represent a promising new approach to reduce the logic complexity and granularity of programmable *** R-FETs have been successfully demonstrated upon silicon nanowire(SiNW)channels,a pair of extra program gates is still needed to control the source/drain(S/D)*** this work,we propose a rather simple single gate R-FET structure with an asymmetric S/D electrode contact,where the FET channel polarity can be altered by changing the sign of channel bias V_(ds).These R-FETs were fabricated upon an orderly array of planar SiNW channels,grown via in-plane solid-liquid-solid mechanism,and contacted by Ti/Al and Pt/Au at the S/D electrodes,***,this channel-bias-controlled R-FET strategy has been successfully testified and implemented upon both p-typedoped(with indium dopants)or n-type-doped(phosphorus)SiNW channels,whereas the R-FET prototypes demonstrate an impressive high I_(on/off) ratio of>10^(6) and a steep subthreshold swing of 79 mV/*** results indicate a rather simple,compact and generic enough R-FET strategy for the construction of a new generation of SiNW-based programmable and low-power electronics.

关键词： Catalytic Si nanowires Asymmetric electrodes Reconfigure transistor

Hierarchical c-Si/SnO2 nanowires and connected Si-Cu alloy nanotubes as anodes for high performance lithium-ion batteries

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Hierarchical c-Si/SnO2 nanowires and connected Si-Cu alloy n...

影响医学毕业生就业的内在制约因素与对策实证研究

第十二届全国硅基光电子材料及器件研讨会

作者： Hucheng Song Hong Xiang Wang linwei yu Jun Xu Haoshen Zhou Kunji Chen National Laboratory of Solid State Microstructures and School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures Nanjing University College of Engineering and Applied Sciences Nanjing University

Seeking high rate, high mass-loading and durable anode materials for lithium ion batteries(LIBs) has been a crucial aspect to promote the use of electric vehicles and other portable ele ctronics. Silicon(Si) has been well-known as an outstanding candidate for LIBs, with a high lithium storage capacity of 4200 m Ah/g and a relatively low lithium insertion potential. However, the process of lithium ions(Li-ion) insertion comes with a huge volume change as large as 400% that will cause a radical pulverization/fracture in the Si host and rapid capacity fading. A common strategy to address this issue is to explore various nanostructured Si materials, including nanoparticles, nanowires(NWs) and nanotubes, which can help to accommodate the large volumetric change during charge/discharge cycling. Among them, nanowire core-shell or hierarchical nano-branch structures have attracted particular interests, where the NW-core can be optimized to serve as efficient electric pathway, while the outer sidewall-coated Si thin film shell or Si NW branches enjoy a large interface for fast Li-ion interaction or insertion. Herein, we will first report a novel alloy-forming approach to convert amorphous Si(a-Si) coated copper-oxide(CuO) core-shell nanowires(NWs) into hollow and highly-interconnected Si-Cu alloy(mixture) nanotubes [1, 2]. The conformal coating of a thick a-Si(>120 nm) layer, in a fine-tuned plasma enhanced deposition, helps to forge a beneficial multipath network over the CuO NWs. Upon a simple H annealing, the CuO cores are reduced and diffuse out to alloy with the a-Si shell, producing highly-interconnected hollow Si-Cu alloy nanotubes, which can serve as high capacity and self-conductive anode structures with robust mechanical support. A high specific capacity of 1010 m Ah/g(or 780 m Ah/g) has been achieved after 1000 cycles at 3.4 A/g(or 20 A/g), with a capacity retention rate of 4%(88%), without the use of any binder or conductive agent. Remarkably, they can survive ex

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中国卫生事业管理 2010年第5期27卷 339-340,357页

作者：俞林伟温州医学院浙江温州325035

随着高等医学教育规模的不断扩大,医学毕业生的就业难问题日益引起社会各界的关注。本文采用问卷调查的实证研究方法,分析了影响浙江省医学毕业生就业的内在制约因素和产生原因,针对目前医学毕业生就业难的现状,提出加强医学生综合素质... 详细信息

随着高等医学教育规模的不断扩大,医学毕业生的就业难问题日益引起社会各界的关注。本文采用问卷调查的实证研究方法,分析了影响浙江省医学毕业生就业的内在制约因素和产生原因,针对目前医学毕业生就业难的现状,提出加强医学生综合素质培养,强化就业指导和就业心理辅导等对策与建议。

关键词：医学毕业生内在制约因素对策实证研究

代际视角下农民工婚育模式与婚姻满意度的关系研究

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浙江社会科学 2018年第12期 77-85,157,158页

作者：陈莉俞林伟温州医科大学应用心理系温州医科大学公共卫生管理学院

基于2016年浙江省农民工婚恋家庭的调查数据,从代际视角探究了新老两代农民工婚育模式和婚姻满意度的现状,重点分析了婚育模式对婚姻满意度的影响。结果表明,新老两代农民工的婚姻满意度水平都处于较高水平,并无明显差异;两代农民工的... 详细信息

基于2016年浙江省农民工婚恋家庭的调查数据,从代际视角探究了新老两代农民工婚育模式和婚姻满意度的现状,重点分析了婚育模式对婚姻满意度的影响。结果表明,新老两代农民工的婚姻满意度水平都处于较高水平,并无明显差异;两代农民工的婚姻观、婚姻行为和生育行为对婚姻满意度有显著影响,拥有夫妻平等观念、无婚外恋、家庭化流动等婚姻特点的农民工,其婚姻满意度最高。同时这种影响在两代农民工群体间也存在显著差异,自主婚姻观会积极影响新生代农民工的婚姻满意度,而初婚和生育男孩对第一代农民工的婚姻满意度会产生积极影响,这种代际差异主要源于两代农民工的不同内在特征、成长经历和婚姻价值观等。

关键词：代际差异农民工婚育模式婚育满意度

企业社会责任、卫生服务与流动人口健康——政府监管的调节作用

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浙江社会科学 2020年第10期 82-90,114,158,159页

作者：于海燕俞林伟温州医科大学公共卫生与管理学院温州325035

流动人口是落实健康中国战略亟需关注的重点人群,企业卫生服务供给是落实健康中国的"细胞"工程建设,在企业中开展流动人口健康促进活动,既有利于预防其职业危害,又便于评估和改善其整体健康,本研究探析了企业社会责任对流动人口健康结... 详细信息

流动人口是落实健康中国战略亟需关注的重点人群,企业卫生服务供给是落实健康中国的"细胞"工程建设,在企业中开展流动人口健康促进活动,既有利于预防其职业危害,又便于评估和改善其整体健康,本研究探析了企业社会责任对流动人口健康结果的影响,检验了企业卫生服务的中介作用与政府监管的调节作用。实证结果发现:(1)企业社会责任履行的程度越高,流动人口健康结果越好,表明企业社会责任是影响流动人口健康的关键因素;(2)企业卫生服务在企业社会责任对流动人口健康的影响中起部分中介作用,企业社会责任的履行可通过企业卫生服务对流动人口健康产生正向影响;(3)政府监管对流动人口健康具有促进作用,政府监管对企业社会责任与流动人口健康的关系没有调节作用,但对企业卫生服务与流动人口健康的关系有负向调节作用。

关键词：企业社会责任卫生服务流动人口政府监管

Si-Based Materials and Devices

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Journal of Semiconductors 2019年第1期 106-106页

作者： Chuanbo Li Jinsong Xia linwei yu Institute of Semiconductors CAS Huazhong University of Science and Technology Nanjing University

J. Semicond. 2018, Vol. 39, Issue 6With the increase of integration density in ICs which is mainly based on silicon materials, the gate lengths of transistors are now scaled down to 7 nm, leading to fundamental challenges to keep up with the Moore’s law. In recent years, many researchers have tried to use the nano-sized Si structure or introduce groupⅣalloys to address the light source issue and establish all Si-based

关键词： Si-Based Materials and Devices

Preface to the Special Issue on Si-Based Materials and Devices

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Journal of Semiconductors 2018年第6期39卷 I0001-I0001页

作者： Chuanbo Li Jinsong Xia linwei yu Minzu University of China Beijing100081China Huazhong University of Science and Technology Wuhan430074China Nanjing University Nanjing220093China

It has been well known that the development of microelectronic and integrated circuit （IC）, mainly based on silicon materials, have changed the way of our life dramatically and accelerated the development and innovation of new technologies. With the increase of integration density in ICs, the gate lengths of transistors are now scaled down to 7 nm, leading to fundamental challenges to keep up with the Moore＇s law. One possible solution is to integrate optical circuits into the Si microelectronic platform to achieve high density electronic-photonic integration.

关键词： Preface to the Special Issue on Si-Based Materials and Devices Si