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Application Potential of Mg–Zn–Nd Alloy as a Gastrointestinal Anastomosis Nail Material

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Acta Metallurgica Sinica(English Letters) 2022年第4期35卷 609-620页

作者： lihui song Ming Gao Lili Tan Zheng Ma Peng Ni Min Zhou Di Na Department of Surgical Oncology and General Surgery The First Hospital of China Medical UniversityKey Laboratory of Precision Diagnosis and Treatment of Gastrointestinal Tumors(China Medical University)Ministry of EducationShenyang 110001China School of Materials Science and Engineering University of Science and Technology of ChinaShenyang 110016China Institute of Metal Research Chinese Academy of SciencesShenyang 110016China

Gastrointestinal tumors are common malignant tumors in the digestive tract, of which gastric cancer is the third leading cause of cancer death and colorectal cancer is the fourth most deadly cancer. Nowadays, surgical resection remains to be one of the main measures for treating digestive tract tumors, and gastrointestinal anastomosis remains to be a key step in gastrointestinal surgery. Mg and its alloys have great potentials to be used for gastrointestinal anastomosis as anastomotic nail materials due to their biodegradability, good mechanical properties and biocompatibility. In this study, Mg–2Zn–0.5Nd(ZN20) alloy fine wires showed great potential as surgical staples. When we performed in vitro corrosion experiments, drainage fluid was collected from different parts of the patient’s abdominal cavity after surgery for the first time to replace the traditional simulation fluid and to more realistically simulate the microenvironment required by the anastomotic nail. ZN20 alloy has an ultimate tensile strength of 256 MPa, an elongation rate of 12.56%, a tensile force in anastomosis of 16.8 N, and a rupture pressure after anastomosis at 17 kPa, which means that a sufficient mechanical support was provided after *** statistical analysis and histopathological analysis of biochemical tests indicate that ZN20 alloy has no adverse effect on the normal metabolism of liver, kidney and body, but has superior biocompatibility and biosafety. This work confirms that ZN20 possesses a great application potential in the clinical field as a new type of gastrointestinal anastomotic nail material.

关键词： Magnesium alloy Gastrointestinal tumor Absorbable Degradation rate

Defects evolution in n-type 4H-SiC induced by electron irradiation and annealing

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Journal of Semiconductors 2024年第7期45卷 77-83页

作者： Huifan Xiong Xuesong Lu Xu Gao Yuchao Yan Shuai Liu lihui song Deren Yang Xiaodong Pi State Key Laboratory of Silicon and Advanced Semiconductor Materials&School of Materials Science and Engineering Zhejiang UniversityHangzhou 310027China Key Laboratory of Power Semiconductor Materials and Devices of Zhejiang Province&Institute of Advanced Semiconductors ZJU-Hangzhou Global Scientific and Technological Innovation CenterZhejiang UniversityHangzhou 311200China

Radiation damage produced in 4H-SiC by electrons of different doses is presented by using multiple characterization techniques. Raman spectra results indicate that SiC crystal structures are essentially impervious to 10 Me V electron irradiation with doses up to 3000 kGy. However, irradiation indeed leads to the generation of various defects, which are evaluated through photoluminescence(PL) and deep level transient spectroscopy(DLTS). The PL spectra feature a prominent broad band centered at 500 nm, accompanied by several smaller peaks ranging from 660 to 808 nm. The intensity of each PL peak demonstrates a linear correlation with the irradiation dose, indicating a proportional increase in defect concentration during irradiation. The DLTS spectra reveal several thermally unstable and stable defects that exhibit similarities at low irradiation ***, after irradiating at the higher dose of 1000 kGy, a new stable defect labeled as R_(2)(Ec-0.51 eV) appeared after annealing at 800 K. Furthermore, the impact of irradiation-induced defects on SiC junction barrier Schottky diodes is discussed. It is observed that high-dose electron irradiation converts SiC n-epilayers to semi-insulating layers. However, subjecting the samples to a temperature of only 800 K results in a significant reduction in resistance due to the annealing out of unstable defects.

关键词： 4H-SiC deep level transient spectroscopy(DLTS) photoluminescence(PL) defects

Defect passivation on cast-mono crystalline screen-printed cells

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Frontiers in Energy 2017年第1期11卷 60-66页

作者： Alison WENHAM lihui song Malcolm ABBOTT Iskra ZAFIROVSKA Sisi WANG Brett HALLAM Catherine CHAN Allen BARNETT Stuart WENHAM School of Photovoltaic and Renewable Energy Engineering University of New South Wales Sydney NSW 2052 Australia College of Materials & Environmental Engineering Hangzhou DianZiUniversity Hangzhou 310018 China

Cast-mono crystalline silicon wafers contain crystallographic defects, which can severely impact the electrical performance of solar cells. This paper demon- strates that applying hydrogenation processes at moderate temperatures to finished screen print cells can passivate dislocation clusters within the cast-mono crystalline silicon wafers far better than the hydrogenation received during standard commercial firing conditions. Efficiency enhancements of up to 2% absolute are demonstrated on wafers with high dislocation densities. The impact of illumination to manipulate the charge state of hydrogen during annealing is investigated and found to not be significant on the wafers used in this study. This finding is contrary to a previous study on similar wafers that concluded increased H or H0 from laser illumination was responsible for the further passivation of positively charged dangling bonds within the dislocation clusters.

关键词： silicon solar cell dislocation cast-mono,laser hydrogen passivation

The mechanical property and corrosion resistance of Mg-Zn-Nd alloy fine wires in vitro and in vivo

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Bioactive Materials 2021年第1期6卷 55-63页

作者： Ming Gao Di Na Xiangqiao Ni lihui song Iniobong PEtim Ke Yang Lili Tan Zheng Ma School of Materials Science and Engineering University of Science and Technology of ChinaShenyang110016China Institute of Metal Research Chinese Academy of SciencesShenyang110016China The First Hospital of China Medical University Department of Surgical OncologyChina

Titanium and its alloy are commonly used as surgical staples in the reconstruction of intestinal tract and stomach,however they cannot be absorbed in human body,which may cause a series of complications to influence further *** and its alloy have great potential as surgical staples,because they can be degraded in human body and have good mechanical properties and *** this study,Mg-2Zn-0.5Nd(ZN20)alloy fine wires showed great potential as surgical *** ultimate tensile strength and elongation of ZN20 alloy fine wires were 248 MPa and 13%,respectively,which could be benefit for the deformation of the surgical staples from U-shape to *** bursting pressure of the wire was about 40 kPa,implying that it can supply sufficient mechanical support after *** test and histological analysis illustrated good biocompatibility and biological safety of ZN20 alloy fine *** residual tensile stress formed on the outside of ZN20 fine wire during drawing would accelerate the *** second phase had a negative influence on corrosion property due to galvanic *** corrosion rate in vitro was faster than that in vivo due to the capsule formed on the surface of ZN20 alloy fine wire.

关键词： Magnesium Surgical staple Anastomosis Corrosion resistance In vivo

Identification of subsurface damage of 4H-SiC wafers by combining photo-chemical etching and molten-alkali etching

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Journal of Semiconductors 2022年第10期43卷 73-78页

作者： Wenhao Geng Guang Yang Xuqing Zhang Xi Zhang Yazhe Wang lihui song Penglei Chen Yiqiang Zhang Xiaodong Pi Deren Yang Rong Wang State Key Laboratory of Silicon Materials&School of Materials Science and Engineering Zhejiang UniversityHangzhou 310027China Institute of Advanced Semiconductors&Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices Hangzhou Innovation CenterZhejiang UniversityHangzhou 311200China Key Laboratory of Optical Field Manipulation of Zhejiang Province Department of PhysicsZhejiang Sci-Tech UniversityHangzhou 310018China School of Materials Science and Engineering&College of Chemistry Zhengzhou UniversityZhengzhou 450001China

In this work,we propose to reveal the subsurface damage(SSD)of 4H-SiC wafers by photo-chemical etching and identify the nature of SSD by molten-alkali *** UV illumination,SSD acts as a photoluminescence-black *** selective photo-chemical etching reveals SSD as the ridge-like *** is found that the ridge-like SSD is still crystalline 4H-SiC with lattice *** molten-KOH etching of the 4H-SiC wafer with ridge-like SSD transforms the ridge-like SSD into groove lines,which are typical features of *** means that the underlying scratches under mechanical stress give rise to the formation of SSD in 4H-SiC *** is incorporated into 4H-SiC wafers during the lapping,rather than the chemical mechanical polishing(CMP).

关键词： 4H-SiC subsurface damages photo-chemical etching molten-alkali etching

Study on the Traditional Classroom Learning and the Autonomous Learning

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Study on the Traditional Classroom Learning and the Autonomo...

Design and Implementation of Security Solution for Computer Network

2012 2nd International Conference on Social Sciences and Society(ICSSS 2012)

作者： song lihui School of Foreign Languages of Shandong Polytechnic University

Autonomous learning has aroused great interest in recent years, and many universities also attempt to test whether it is really beneficial to students. The author of this article will use her experiment to present rea... 详细信息

关键词： Autonomous learning Traditional Classroom Learning Comparison.

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International Journal of Technology Management 2015年第5期 75-78页

作者： lihui song Haicun ZHAO Yanching Institute of Technology Langfang Hebei 065201 China The Northern Investment Group Co Ltd. Beijing 100084China

This article analyzes the problem of computer network security, and design scheme of the network security system. The scheme uses advanced network security technologies, includes a complete set of physical isolation, desktop system security, virus protection, identity authentication, access control, information encryption, message integrity check, non-repudiation, security audit, intrusion detection, vulnerability scanning, electromagnetic leakage emission protection, security management and other security technology and management measures, the purpose is to establish a complete, multi-level three-dimensional, network security defense system.

关键词： Network security Firewall Intrusion detection Security audit

Discrimination of dislocations in 4H-SiC by inclination angles of molten-alkali etched pits

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Journal of Semiconductors 2022年第12期43卷 72-78页

作者： Guang Yang Hao Luo Jiajun Li Qinqin Shao Yazhe Wang Ruzhong Zhu Xi Zhang lihui song Yiqiang Zhang Lingbo Xu Can Cui Xiaodong Pi Deren Yang Rong Wang Key Laboratory of Optical Field Manipulation of Zhejiang Province Department of PhysicsZhejiang Sci-Tech UniversityHangzhou 310018China State Key Laboratory of Silicon Materials and School of Materials Science and Engineering Zhejiang UniversityHangzhou 310027China Hangzhou Innovation Center Zhejiang UniversityHangzhou 311200China School of Materials Science and Engineering&Henan Institute of Advanced Technology Zhengzhou UniversityZhengzhou 450001China

Discrimination of dislocations is critical to the statistics of dislocation densities in 4H silicon carbide(4H-SiC),which are routinely used to evaluate the quality of 4H-SiC single crystals and homoepitaxial *** this work,we show that the inclination angles of the etch pits of molten-alkali etched 4H-SiC can be adopted to discriminate threading screw dislocations(TSDs),threading edge dislocations(TEDs)and basal plane dislocations(BPDs)in *** n-type 4H-SiC,the inclination angles of the etch pits of TSDs,TEDs and BPDs in molten-alkali etched 4H-SiC are in the ranges of 27°−35°,8°−15°and 2°−4°,*** semi-insulating 4H-SiC,the inclination angles of the etch pits of TSDs and TEDs are in the ranges of 31°−34°and 21°−24°,*** inclination angles of dislocation-related etch pits are independent of the etching duration,which facilitates the discrimination and statistic of dislocations in *** significantly,the inclination angle of a threading mixed dislocations(TMDs)is found to consist of characteristic angles of both TEDs and *** enables to distinguish TMDs from TSDs in 4H-SiC.

关键词： 4H-SiC single crystals dislocations molten-alkali etching

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跨文化交际现象分析及其能力培养探讨

北京理工大学学报（社会科学版） 2011年第4期13卷 153-156页

作者：宋利辉北京理工大学外国语学院北京100081

跨文化交际是我国外语教育界研究的热门课题。跨文化交际成为社会日常生活中不可避免的一部分。心理环境与跨文化交际、时间观和拜访习俗方面的文化差异、传统文化差异与跨文化语用失误等对社会交往尤其是国际交往有严重影响。减少此类... 详细信息

跨文化交际是我国外语教育界研究的热门课题。跨文化交际成为社会日常生活中不可避免的一部分。心理环境与跨文化交际、时间观和拜访习俗方面的文化差异、传统文化差异与跨文化语用失误等对社会交往尤其是国际交往有严重影响。减少此类影响,促进交际效果,需要培养对自身文化和交际方文化背景的理解能力、移情能力,尽可能提升对异域文化或多元文化的敏感性、提高情节处置能力。

关键词：跨文化交际地球村隐私多向时间移情情节能力