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Journal of Rare Earths 2021年第9期39卷 1100-1107页

作者： lihong bao Jun Ning Narengerile Zizhong Liu College of Physics and Electronic Information.Inner Mongolia Normal University.Hohhot 010022 China Inner Mongolia Key Laboratory for Physics and Chemistry of Functional Materials.Inner Mongolia Normal University Hohhot 010022.China College of Chemistry and Enviormental Science

Binary nanocrystalline rare-earth hexaboride is regarded as one of the promising optical absorption materials that possess the high transparency for visible light and the strong absorption for NIR due to the effects of localized surface plasmon *** present work,we experimentally investigated the structural and optical absorption of ternary nanocrystalline Eu-doped SmB6 *** a result,it is found that the reaction temperature as an important factor not only refines the grain size,but also improves the powder dispersion of synthesized *** optical absorption results reveal that the transmittance wavelength of nanocrystalline SmB6 increases from 696 nm to exceeding 1000 nm with the Eu doping content increasing to x=*** retically,in order to study the transmittance wavele ngth tunable mechanisms of nanocrystalline Eu-doped SmB6,the electronic structure,density of states and energy loss function were calculated by first-principle *** shows that the En2+doping into SmB6 effectively reduces the plasma frequency excitation energy from 1.48 to 1.25 eV and leads to the transmittance wavelength redshift toward a higher *** on above meaningful studies,present work is helpful for extension of optical applications of nanocrystalline SmB6 powder.

关键词： Nanocrystalline SmB_(6) Optical property First-principles calculation Rare earths

2023年美国胸科医师学会《神经肌肉疾病患者呼吸管理指南》解读

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中国循证医学杂志 2025年第1期25卷 95-101页

作者：郭逸群罗洋沈曼冯莉娟宋玉荣鲍利红华中科技大学同济医学院附属协和医院胸外科武汉430000

神经肌肉疾病是一组影响运动神经元、周围神经、神经-肌肉接头和骨骼肌的疾病,可能导致呼吸肌受损和呼吸功能下降,严重影响患者生存质量。2023年3月,美国胸科医师学会发布了针对神经肌肉疾病患者呼吸管理的临床实践指南和专家小组报告... 详细信息

神经肌肉疾病是一组影响运动神经元、周围神经、神经-肌肉接头和骨骼肌的疾病,可能导致呼吸肌受损和呼吸功能下降,严重影响患者生存质量。2023年3月,美国胸科医师学会发布了针对神经肌肉疾病患者呼吸管理的临床实践指南和专家小组报告。本文总结、归纳并解释了该指南的内容和要点,为临床医务人员提供更具针对性的指导,以期提高神经肌肉疾病患者的呼吸管理效果。

关键词：临床实践指南神经肌肉疾病无创通气肺功能测试呼吸衰竭睡眠呼吸障碍气道廓清技术

Preparation of Photochromic Waterborne Polyurethane Films:Effect of Spiropyran Concentration on Photochromic Properties

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Journal of Donghua University(English Edition) 2020年第1期37卷 28-34页

作者： bao lihong WANG Shixian School of Materials Design and Engineering Beijing Institute of Fashion TechnologyBeijing 100029China Beijing Key Laboratory of Clothing Materials R&D and Assessment Beijing 100029China

Incorporation of photochromic compounds to the polymer through chemical bonding will result in an enhancement of photoactivity and stabilization of optical ***,spiropyran(SP)was introduced into polyurethane(PU)through semi-continuous emulsion copolymerization to get waterborne polyurethane dispersion(SPU).Studies on photochromic properties by UV-vis technique demonstrated the absorption intensity increased with the increasing of SP concentration and the colorless film turned to purple under UV *** kinetics for ring-opening and ring-closing reaction against SP were both first order,but the rate constants decreased with the increasing of SP *** prepared SPU films showed reasonable photostability and photoreversibility according to the convenient test methods under UV-vis *** dependence studies demonstrated that the photobleaching rate increased at higher temperatures with the same SP *** chemical combination between SP and isocyanate(NCO)end group of polyurethane was confirmed through swelling *** studies were conducted by scanning electron microscope(SEM)micrographs and showed good compatibility between SP and PU.

关键词： spiropyran concentration waterborne polyurethane film photochromic properties kinetics

Ferroelectric-gated ReS_(2)field-effect transistors for nonvolatile memory

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Nano Research 2022年第6期15卷 5443-5449页

作者： Li Liu Hao Wang Qilong Wu Kang Wu Yuan Tian Haitao Yang Cheng Min Shen lihong bao Zhihui Qin Hong-Jun Gao Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education&Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices School of Physics and ElectronicsHunan UniversityChangsha 410082China Institute of Physics&University of Chinese Academy of Sciences Chinese Academy of SciencesBeijing 100190China Songshan Lake Materials Laboratory DongguanGuangdong 523808China

Ferroelectric field-effect transistors(FeFET)with nondestructive readout capability have emerged as an attractive candidate for next-generation nonvolatile memory ***,we demonstrate ferroelectric-gated nonvolatile memory featuring a top gate architecture by combining multi-layer ReS_(2)with ferroelectric poly(vinylidene fluoride-trifluoroethylene)(P(VDF-TrFE))copolymer *** ReS_(2)FeFET using hBN as substrate shows a large memory window of~30 *** write/erase operations are successfully performed by applying pulse voltage of±25 V with 1 ms width to the ferroelectric P(VDF-TrFE),and an ultra-high write/erase ratio of~107 can be ***,the ReS_(2)FeFET shows stable data retention capability of longer than 2,000 s and reliable endurance of greater than 2,000 *** characteristics highlight that such ferroelectricgated nonvolatile memory has great potential in future non-volatile memory applications.

关键词： Ferroelectric nonvolatile memory poly(vinylidene fluoride-trifluoroethylene)(P(VDF-TrFE)) ReS_(2)

Laser-induced phase conversion of n-type SnSe_(2)to p-type SnSe

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Chinese Physics B 2022年第4期31卷 56-60页

作者： Qi Zheng Rong Yang Kang Wu Xiao Lin Shixuan Du Chengmin Shen lihong bao Hong-Jun Gao Beijing National Center for Condensed Matter Physics and Institute of Physics Chinese Academy of SciencesBeijing 100190China School of Physical Sciences University of Chinese Academy of SciencesBeijing 100190China CAS Center for Excellence in Topological Quantum Computation University of Chinese Academy of SciencesBeijing 100190China Songshan Lake Materials Laboratory Dongguan 523808China

We report a facile phase conversion method that can locally convert n-type SnSe_(2)into p-type SnSe by direct laser *** spectra of SnSe_(2)flakes before and after laser irradiation confirm the phase conversion of SnSe_(2)to *** performing the laser irradiation on SnSe_(2)flakes at different temperatures,it is found that laser heating effect induces the removal of Se atoms from SnSe_(2)and results in the phase conversion of SnSe_(2)to ***-revolved transmission electron microscope images of SnSe_(2)flakes before and after laser irradiation further confirm such *** selective laser irradiation on SnSe_(2)flakes,a pattern with SnSe_(2)/SnSe heteostructures is *** indicates that the laser induced phase conversion technique has relatively high spatial resolution and enables the creation of micron-sized in-plane p-n junction at predefined region.

关键词： SnSe_(2) SnSe laser irradiation local phase conversion

Electrostatic gating of solid-ion-conductor on InSe flakes and InSe/h-BN heterostructures

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Chinese Physics B 2020年第11期29卷 543-547页

作者： Zhang Zhou Liangmei Wu Jiancui Chen Jiajun Ma Yuan Huang Chengmin Shen lihong bao Hong-Jun Gao Institute of Physics Chinese Academy of SciencesBeijing 100190China University of Chinese Academy of Sciences&CAS Center for Excellence in Topological Quantum Computation Chinese Academy of SciencesBeijing 100190China Songshan Lake Materials Laboratory Dongguan 523808China

We report the electrical transport properties of InSe flakes electrostatically gated by a solid ion *** large tuning capability of the solid ion conductor as gating dielectric is confirmed by the saturation gate voltage as low as^1 V and steep subthreshold swing(83 mV/dec).The p-type conduction behavior of InSe is obtained when negative gate voltages are *** doping of the solid ion conductor is suppressed by inserting a buffer layer of hexagonal boron nitride(h-BN)between InSe and the solid-ion-conductor *** comparing the performance of devices with and without h-BN,the capacitance of solid ion conductors is extracted to be the same as that of^2 nm h-BN,and the mobility of InSe on solid ion conductors is comparable to that on the SiO2 *** results show that solid ion conductors provide a facile and powerful method for electrostatic doping.

关键词： solid ion conductors electrostatic gating InSe van der Waals heterostructure

h-BN-assisted Metal Contact Transfer to InSe for Two-Dimensional Multifunctional Electronic Devices

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Chinese Physics Letters 2024年第12期41卷 210-225页

作者： Chijun Wei Nuertai Jiazila Xuanye Liu Peng Song Hui Gao Jiequn Sun lihong bao Xiao Lin Hong-Jun Gao School of Physical Sciences and CAS Key Laboratory of Vacuum Physics University of Chinese Academy of SciencesBeijing 100190China Beijing National Center for Condensed Matter Physics and Institute of Physics Chinese Academy of SciencesBeijing 100190China Hefei National Laboratory Hefei 230088China

Metal contacts to two-dimensional(2D)semiconductors are crucial for determining the electrical performance of electronic ***,traditional three-dimensional metal deposition processes cause damage to 2D semiconductors and considerable Fermi-level-pinning *** this study,a hexagonal boron nitride(h-BN)-assisted transfer method was proposed for transferring metal contacts to few-layered InSe for fabricating 2D functional electronic *** the transferred Pt electrodes as the contact,p-type dominated ambipolar conduction behavior with the hole Schottky barrier height(SBH)approaching 0meV was observed in field-effect transistors(FETs)comprising multilayered *** on this phenomenon,several InSe homojunctions were fabricated using a dual-gate modulating method such as p-p,n-n,p-n,and *** InSe p-n homojunctions,a current rectification ratio of over 104 and optoelectronic detection capabilities were ***,a complementary metal-oxide-semiconductor(CMOS)inverter with an ultra-high voltage gain exceeding 60 at VDD=−1V was *** proposed h-BN-assisted metal contact transfer method can be easily extended to other 2D semiconductors for fabricating complementary electronic and optoelectronic devices.

关键词： complementary semiconductors exceeding

Intercalation of germanium oxide beneath large-area and high-quality epitaxial graphene on Ir(111) substrate

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Chinese Physics B 2021年第4期30卷 125-129页

作者： Xueyan Wang Hui Guo Jianchen Lu Hongliang Lu Xiao Lin Chengmin Shen lihong bao Shixuan Du Hong-Jun Gao Institute of Physics and University of Chinese Academy of Sciences Chinese Academy of SciencesBeijing 100190China CAS Center for Excellence in Topological Quantum Computation Chinese Academy of SciencesBeijing 100190China Songshan Lake Materials Laboratory Dongguan 523808China

Epitaxial growth on transition metal surfaces is an effective way to prepare large-area and high-quality ***,the strong interaction between graphene and metal substrates suppresses the intrinsic excellent properties of graphene and the conductive metal substrates also hinder its applications in *** we demonstrate the decoupling of graphene from metal substrates by germanium oxide *** is firstly intercalated into the interface between graphene and Ir(111) *** oxygen is subsequently intercalated,leading to the formation of a GeO_(x) layer,which is confirmed by x-ray photoelectron ***-energy electron diffraction and scanning tunneling microscopy studies show intact carbon lattice of graphene after the GeO_(x) *** characterizations reveal that the intercalated layer effectively decouples graphene from the Ir *** transport measurements demonstrate that the GeO_(x) layer can act as a tunneling barrier in the fabricated large-area high-quality vertical graphene/GeO_(x)/Ir heterostructure.

关键词： graphene intercalation heterostructure tunneling barrier

Scalable preparation of water-soluble ink of few-layered WSe2 nanosheets for large-area electronics

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Chinese Physics B 2020年第6期29卷 399-404页

作者： Guoyu Xian Jianshuo Zhang Li Liu Jun Zhou Hongtao Liu lihong bao Chengmin Shen Yongfeng Li Zhihui Qin Haitao Yang Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education&Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices School of Physics and ElectronicsHunan UniversityChangsha 410082China Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of SciencesBeijing 100190China State Key Laboratory of Heavy Oil Processing China University of PetroleumBeijing 102249China

Few-layer two-dimensional(2D)semiconductor nanosheets with a layer-dependent band gap are attractive building blocks for large-area thin-film electronics.A general approach is developed to fast prepare uniform and phase-pure 2HWSe2 semiconducting nanosheets at a large scale,which involves the supercritical carbon dioxide(SC-CO2)treatment and a mild sonication-assisted exfoliation process in aqueous *** as-prepared 2H-WSe2 nanosheets preserve the intrinsic physical properties and intact crystal structures,as confirmed by Raman,x-ray photoelectron spectroscopy(XPS),and scanning transmission electron microscope(STEM).The uniform 2H-WSe2 nanosheets can disperse well in water for over six *** good dispersivity and uniformity enable these nanosheets to self-assembly into thickness-controlled thin films for scalable fabrication of large-area arrays of thin-film *** electronic transport and photoelectronic properties of the field-effect transistor based on the self-assembly 2H-WSe2 thin film have also been explored.

关键词： low dimensional nanosheets self-assembly electronics

Ultrafast reconfigurable direct charge trapping devices based on few-layer MoS_(2)

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Chinese Physics B 2024年第12期33卷 139-148页

作者： Hui Gao Xuanye Liu Peng Song Chijun Wei Nuertai Jiazila Jiequn Sun Kang Wu Hui Guo Haitao Yang lihong bao Hong-Jun Gao Institute of Physics Chinese Academy of SciencesBeijing 100190China School of Physical Sciences and CAS Key Laboratory of Vacuum Physics University of Chinese Academy of SciencesBeijing 100049China Hefei National Laboratory Hefei 230088China

Charge trapping devices incorporating 2D materials and high-κdielectrics have emerged as promising candidates for compact,multifunctional memory devices compatible with silicon-based manufacturing ***,traditional charge trapping devices encounter bottlenecks including complex device structure and low operation ***,we demonstrate an ultrafast reconfigurable direct charge trapping device utilizing only a 30 nm-thick Al_(2)O_(3)trapping layer with a MoS_(2)channel,where charge traps reside within the Al_(2)O_(3)bulk confirmed by transfer curves with different gatevoltage sweeping rates and photoluminescence(PL)*** direct charging tapping device shows exceptional memory performance in both three-terminal and two-terminal operation modes characterized by ultrafast three-terminal operation speed(~300 ns),an extremely low OFF current of 10^(-14)A,a high ON/OFF current ratio of up to 10^(7),and stable retention and endurance ***,the device with a simple symmetrical structure exhibits VDpolarity-dependent reverse rectification behavior in the high resistance state(HRS),with a rectification ratio of 10^(5).Additionally,utilizing the synergistic modulation of the conductance of the MoS_(2)channel by V_(D)and V_(G),it achieves gate-tunable reverse rectifier and ternary logic capabilities.

关键词： charge trapping memory two-dimensional materials reconfigurable device reverse rectification