Ferroelectric-gated ReS_(2)field-effect transistors for nonvolatile memory

作     者：Li Liu Hao Wang Qilong Wu Kang Wu Yuan Tian Haitao Yang Cheng Min Shen Lihong Bao Zhihui Qin Hong-Jun Gao Li Liu;Hao Wang;Qilong Wu;Kang Wu;Yuan Tian;Haitao Yang;Cheng Min Shen;Lihong Bao;Zhihui Qin;Hong-Jun Gao

作者机构：Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education&Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and DevicesSchool of Physics and ElectronicsHunan UniversityChangsha 410082China Institute of Physics&University of Chinese Academy of SciencesChinese Academy of SciencesBeijing 100190China Songshan Lake Materials LaboratoryDongguanGuangdong 523808China 

出 版 物：《Nano Research》 (纳米研究（英文版）)

年 卷 期：2022年第15卷第6期

页      面：5443-5449页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：supported by the National Key Research&Development Projects of China(Nos.2016YFA0202300 and 2018FYA0305800) National Natural Science Foundation of China(Nos.61888102 and 51772087) Strategic Priority Research Program of Chinese Academy of Sciences(CAS,No.XDB30000000) Youth Innovation Promotion Association of CAS(No.Y201902) CAS Project for Young Scientists in Basic Research(No.YSBR-003) 

主　　题：Ferroelectric nonvolatile memory poly(vinylidene fluoride-trifluoroethylene)(P(VDF-TrFE)) ReS_(2) 

摘      要：Ferroelectric field-effect transistors(FeFET)with nondestructive readout capability have emerged as an attractive candidate for next-generation nonvolatile memory ***,we demonstrate ferroelectric-gated nonvolatile memory featuring a top gate architecture by combining multi-layer ReS_(2)with ferroelectric poly(vinylidene fluoride-trifluoroethylene)(P(VDF-TrFE))copolymer *** ReS_(2)FeFET using hBN as substrate shows a large memory window of~30 *** write/erase operations are successfully performed by applying pulse voltage of±25 V with 1 ms width to the ferroelectric P(VDF-TrFE),and an ultra-high write/erase ratio of~107 can be ***,the ReS_(2)FeFET shows stable data retention capability of longer than 2,000 s and reliable endurance of greater than 2,000 *** characteristics highlight that such ferroelectricgated nonvolatile memory has great potential in future non-volatile memory applications.