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Suppression of leakage current in carbon nanotube field-effect transistors

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Nano Research 2021年第4期14卷 976-981页

作者： Lin Xu Chenguang Qiu lian-mao peng Zhiyong Zhang Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics Peking UniversityBeijing 100871China

Carbon nanotube field-effect transistor(CNT FET)has been considered as a promising candidate for future high-performance and low-power integrated circuits(ICs)applications owing to its ballistic transport and excellent immunity to short channel effects(SCEs).Still,it easily suffers from the ambipolar property,and severe leakage current at off-state originated from gate-induced drain leakage(GIDL)in CNT FETs with small *** some modifications on device structure have been experimentally demonstrated to suppress the leakage current in CNT FETs,there is still a lack of the structure with excellent scalability,which will hamper the development of CNT FETs toward a competitive technology ***,we explore how the device geometry design affects the leakage current in CNT FETs,and then propose the possible device structures to suppress off-state current and check their availability through the two-dimensional(2D)TCAD *** all the proposed structures,the L-shaped-spacer CNT FET exhibits significantly suppressed leakage current and excellent scalability down to sub-50 nm with a simple self-aligned gate *** to the simulation results,the 50 nm gate-length L-shaped-spacer CNT FET exhibits an off-state current as low as approximately 1 nA/μm and an on-current as high as about 2.1 mA/μm at a supply voltage of-1 V and then can be extended as a universal device structure to suppress leakage current for all the narrow-bandgap semiconductors based FETs.

关键词： carbon nanotube field-effect transistor leakage current TCAD simulation narrow-bandgap semiconductor

Current sustainability and electromigration of Pd,Sc and Y thin-films as potential interconnects

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Nano-Micro Letters 2010年第3期2卷 184-189页

作者： Yong Yang Shengyong Xu Sishen Xie lian-mao peng Key Laboratory for the Physics and Chemistry of Nanodevices and Department of ElectronicsPeking University Institute of Physics Chinese Academy of Sciences

The progress on novel interconnects for carbon nanotube(CNT)-based electronic circuit is by far behind the remarkable development of CNT-field effect *** Cu interconnect material used in current integrated circuits seems not applicable for the novel interconnects,as it requires electrochemical deposition followed by chemical-mechanical *** report our experimental results on the failure current density,resistivity,electromigration effect and failure mechanism of patterned stripes of Pd,Sc and Y thin-films,regarding them as the potential novel *** Pd stripes have a failure current density of(8~10)×106 A/cm^2(MA/cm^2),and they are stable when the working current density is as much as 90% of the failure current ***,they show a resistivity around 210 μΩ·cm,which is 20 times of the bulk value and leaving room for *** to Pd,the Sc stripes have a similar resistivity but smaller failure current density of 4~5 MA/cm^2.Y stripes seem not suitable for interconnects by showing even lower failure current density than that of Sc and evidence of *** comparison,Au stripes of the same dimensions show a failure current density of 30 MA/cm^2 and a resistivity around 4 μΩ·cm,making them also a good material as novel interconnects.

关键词： Carbon nanotube-based field effect transistors Carbon nanotube-based circuit Interconnects Current density Electromigration Resistivity

Carbon nanotube network film-based ring oscillators with sub l O-ns propagation time and their applications in radio-frequency signal transmission

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Nano Research 2018年第1期11卷 300-310页

作者： Yingjun Yang Li Ding Hengjia Chen Jie Han Zhiyong Zhang lian-mao peng Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics Peking University Beijing 100871 China

We have fabricated top-gated ambipolar field-effect transistors （FETs） based on solution-derived carbon nanotube （CNT） network films, and then constructed inverters and ring oscillators （ROs） that can work under supply voltages as low as 0.2 V owing to the high uniformity of the devices. Significant improvements were achieved in the performance of these CNT-based ambipolar FETs and CMOS-like circuits by scaling down the gate length of the CNT FETs and optimizing the device structure and RO layout. In particular, the optimized five-stage RO is shown to present a record high oscillation frequency of up to 17.4 MHz with a propagation time of 5.6 ns at a 12-V working voltage. The CNT film-based ROs were used as carrier-wave generators in radio-frequency systems to demonstrate a complete signal transmission process. These results suggest that CNT thin film-based FETs and integrated circuits may soon find their way to radio-frequency applications with a frequency band of 13.56 MHz.

关键词： carbon nanotube nanoelectronics field-effect transistors radio-frequency ring oscillator

Recent progress of photodetector based on carbon nanotube film and application in optoelectronic integration

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Nano Research Energy 2023年第2期2卷 182-199页

作者： Xiang Cai Sheng Wang lian-mao peng Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics School of ElectronicsPeking UniversityBeijing 100871China State Key Laboratory of Advanced Optical Communication System and Networks School of ElectronicsPeking UniversityBeijing 100871China

Due to its remarkable electrical and optical capabilities,optoelectronic devices based on the semiconducting single-walled carbon nanotube(s-SWCNT)have been studied extensively in the last two ***,s-SWCNT is a direct bandgap semiconductor with a high infrared absorption coefficient and high electron/hole *** addition,as a typical one-dimensional material,there is no lattice mismatch between s-SWCNT and any *** advantage is that the optoelectronic devices of s-SWCNT can be processed at low temperatures.s-SWCNT has intriguing potential and applications in solar cells,light-emitting diodes(LEDs),photodetectors,and three-dimensional(3D)optoelectronic *** recent years,along with the advancement of solution purification technology,the high-purity s-SWCNTs film has laid the foundation for constructing large-area,homogenous,and high-performance optoelectronic *** this review,optoelectronic devices based on s-SWCNTs film and related topics are reviewed,including the preparation of high purity s-SWCNTs film,the progress of photodetectors based on the s-SWCNTs film,and challenges of s-SWCNTs film photodetectors.

关键词： carbon nanotube high purity semiconducting single-walled carbon nanotubes(s-SWCNTs)film photodetectors optoelectronic integration

How to build good inverters from nanomaterial-based transistors

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Nano Research 2023年第11期16卷 12594-12600页

作者： pengkun Sun Nan Wei Panpan Zhang Yingjun Yang Maguang Zhu Huiwen Shi lian-mao peng Zhiyong Zhang Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics School of ElectronicsPeking UniversityBeijing 100871China

As promising components of future integrated circuits(ICs),field-effect transistors(FETs)based on semiconducting nanomaterials are being extensively *** the most essential component of ICs,inverters are favored to be demonstrated at the infant stage of emerging ***,systematic research is absent to reveal how the parameters of transistors affect the performance of inverters,*** voltage transfer characteristics(VTCs).In this work,systematic analysis about the dependency between transistor-and inverter-level metrics have been carried out for both complementary metal-oxide-semiconductor(CMOS)and monotype(p-type-only and n-type-only)technologies,which is further experimentally demonstrated by carbon nanotube FETs and *** also propose guidelines towards the high noise margin and rail-to-rail inverter design based on nanomaterials.

关键词： field-effect transistors inverter voltage transfer characteristics noise margin nanomaterial

One-dimensional perovskite-based Li-ion battery anodes with high capacity and cycling stability

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Journal of Energy Chemistry 2022年第9期31卷 73-80,I0003页

作者： Hua Kong Jiafeng Wu Ying Han Yu Zhang Ning Zhou Qi Chen Wentao Sun Huanping Zhou lian-mao peng Key Laboratory for the Physics and Chemistry of Nanodevices School of ElectronicsPeking UniversityBeijing 100871China School of Materials Science and Engineering Peking UniversityBeijing 100871China School of Materials Science and Engineering Beijing Institute of TechnologyBeijing 100081China

Perovskite,widely used in solar cells,has also been proven to be potential candidate for effective energy storage *** progress indicates the promise of perovskite for battery applications,however,the specific capacity of the resulting lithium-ion batteries must be further ***,by adjusting the dimensionality of perovskite,we fabricated high-performing one-dimensional hybrid perovskite C_(4)H_(20)N_(4)PbBr_(6) based lithium-ion batteries,with the first specific capacity as high as 1632.8 mAh g^(-1)and a stable specific capacity of 598.0 mAh g^(-1)after 50 cycles under the condition of the constant current density of 150 mA g^(-1).The stable specific capacity is 2.36 times higher than that of the three-dimensional perovskite CH_(3)NH_(3)PbBr_(3)(253.2 mAh g^(-1)),and 1.6 times higher than that of the commercialized graphite electrode(372 mAh g^(-1)).The structure difference and the associated ion diffusivity are revealed to substantially affect the specific capacity of the perovskite-based lithium-ion *** study opens up new directions for the applications of hybrid perovskites in energy storage devices.

关键词： Li-ion battery One-dimensional perovskite materials

Flexible Integrated Circuits Based on Carbon Nanotubes

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Accounts of Materials Research 2020年第1期1卷 88-99页

作者： Youfan Hu lian-mao peng Li Xiang Heng Zhang Key Laboratory for the Physics and Chemistry of Nanodevices Center for Carbon-Based ElectronicsFrontiers Science Center for Nano-optoelectronicsand Department of ElectronicsPeking UniversityBeijing 100871China Hunan Institute of Advanced Sensing and Information Technology Xiangtan UniversityHunan 411105China

CONSPECTUS:Flexible integrated circuits,working as the core unit of information processing,have been a subject of extensive research;they are essential to realize fully flexible electronic systems,which possess advantages over the current hybrid flexible systems(part or all based on rigid silicon chips)because of their extended application forms,better adaptability,and greater ability to operate at biotic/abiotic *** a great extent,the deliverable functionality of the ultimate integrated system is determined by the information handling capability of flexible integrated circuits,which is highly dependent on their performance and integration ***,as the applications of flexible electronic systems become increasingly favorable in portable,wearable,or remote forms with a restrained power supply,the power dissipation of flexible integrated circuits becomes crucial,as they consume considerable energy in a *** to the restricted fabrication circumstances on flexible substrates with a low thermal budget and complex working environments(from the perspectives of both mechanical and electrical conditions),pursuing flexible integrated circuits with high performance,decent integration scale,and low power consumption is very challenging,but it is necessary for advanced,fully flexible *** characteristics,such as biocompatibility,degradability,and configurability,would add value to flexible integrated circuits and introduce unconventional forms and new deliverables for flexible *** this Account,we summarize our efforts toward developing carbon nanotube-based flexible integrated circuits over the past five *** promising candidates for constructing next-generation chips,carbon nanotube-based integrated circuits have demonstrated their superiority in performance and power consumption,and we extend these advancements to a flexible form through material optimization,device design,processing technology development,*** start with

关键词： implantation electronics Flexible

Wafer-scale fabrication of carbon-nanotube-based CMOS transistors and circuits with high thermal stability

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Nano Research 2022年第11期15卷 9875-9880页

作者： Nan Wei Ningfei Gao Haitao Xu Zhen Liu Lei Gao Haoxin Jiang Yu Tian Yufeng Chen Xiaodong Du lian-mao peng Beijing HuaTanYuanXin Electronics Technology Ltd.Co. Beijing 101399China Research Center for Carbon-based Electronics Peking UniversityBeijing 100871China Beijing Institute of Carbon-based Integrated Circuits Beijing 100195China

Thanks to its single-atomic-layer structure,high carrier transport,and low power dissipation,carbon nanotube electronics is a leading candidate towards beyond-silicon *** low temperature fabrication processes enable three-dimensional(3D)integration with logic and memory(static random access memory(SRAM),magnetic random access memory(MRAM),resistive random access memory(RRAM),etc.)to realize efficient near-memory ***,carbon nanotube transistors require good thermal stability up to 400℃ processing temperature to be compatible with back-end-of-line(BEOL)process,which has not been previously *** this work,we developed a robust wafer-scale process to build complementary carbon nanotube transistors with high thermal stability and good uniformity,where AlN was employed as electrostatic doping *** gate stack and passivation layer were optimized to realize high-quality ***,we demonstrate 1-bit carbon nanotube full adders working under 250℃ with rail-to-rail outputs.

关键词： carbon nanotube field-effect transistors complementary metal-oxide-semiconductor(CMOS) thermal stability waferscale integrated circuits

Wafer-scale carbon-based CMOS PDK compatible with siliconbased VLSI design flow

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Nano Research 2024年第8期17卷 7557-7566页

作者： Minghui Yin Haitao Xu Yunxia You Ningfei Gao Weihua Zhang Hongwei Liu Huanhuan Zhou Chen Wang lian-mao peng Zhiqiang Li Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China State Key Lab of Fabrication Technologies for Integrated Circuits Beijing 100029China Beijing Hua Tan Yuan Xin Electronics Technology Co. Ltd.Beijing 101399China Institute of Carbon-based Thin Film Electronics Peking UniversityShanxi 030012China Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics School of ElectronicsPeking UniversityBeijing 100871China

Carbon nanotube field-effect transistors(CNTFETs)are increasingly recognized as a viable option for creating high-performance,low-power,and densely integrated circuits(ICs).Advancements in carbon-based electronics,encompassing materials and device technology,have enabled the fabrication of circuits with over 1000 gates,marking carbon-based integrated circuit design as a burgeoning field of research.A critical challenge in the realm of carbon-based very-large-scale integration(VLSI)is the lack of suitable automated design methodologies and infrastructure *** this study,we present the development of a waferscale 3μm carbon-based complementary metal-oxide-semiconductor(CMOS)process design kit(PDK)(3μm-CNTFETs-PDK)compatible with silicon-based Electronic Design Automation(EDA)tools and VLSI circuit design *** proposed 3μm-CNTFETs-PDK features a contacted gate pitch(CGP)of 21μm,a gate density of 128 gates/mm^(2),and a transistor density of 554 transistors/mm^(2),with an intrinsic gate delay around 134 *** of the 3μm-CNTFETs-PDK was achieved through the successful design and tape-out of 153 standard cells and 333-stage ring oscillator *** the carbon-based PDK and a silicon-based design platform,we successfully implemented a complete 64-bit static random-access memory(SRAM)circuit system for the first time,which exhibited timing,power,and area characteristics of clock@10 kHz,122.1μW,3795μm×2810μ*** research confirms that carbon-based IC design can be compatible with existing EDA tools and silicon-based VLSI design flow,thereby laying the groundwork for future carbon-based VLSI advancements.

关键词： carbon nanotube field-effect transistors(CNTFETs) complementary metal-oxide-semiconductor(CMOS) process design kit(PDK) wafer-scale very-large-scale integration(VLSI)