How to build good inverters from nanomaterial-based transistors

作     者：Pengkun Sun Nan Wei Panpan Zhang Yingjun Yang Maguang Zhu Huiwen Shi Lian-Mao Peng Zhiyong Zhang Pengkun Sun;Nan Wei;Panpan Zhang;Yingjun Yang;Maguang Zhu;Huiwen Shi;Lian-Mao Peng;Zhiyong Zhang

作者机构：Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based ElectronicsSchool of ElectronicsPeking UniversityBeijing 100871China 

出 版 物：《Nano Research》 (纳米研究（英文版）)

年 卷 期：2023年第16卷第11期

页      面：12594-12600页

核心收录：

学科分类：0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：supported by the National Key Research and Development Program(No.2022YFB4401601) the National Science Foundation of China(Nos.62225101,62101008 and U21A6004) 

主　　题：field-effect transistors inverter voltage transfer characteristics noise margin nanomaterial 

摘      要：As promising components of future integrated circuits(ICs),field-effect transistors(FETs)based on semiconducting nanomaterials are being extensively *** the most essential component of ICs,inverters are favored to be demonstrated at the infant stage of emerging ***,systematic research is absent to reveal how the parameters of transistors affect the performance of inverters,*** voltage transfer characteristics(VTCs).In this work,systematic analysis about the dependency between transistor-and inverter-level metrics have been carried out for both complementary metal-oxide-semiconductor(CMOS)and monotype(p-type-only and n-type-only)technologies,which is further experimentally demonstrated by carbon nanotube FETs and *** also propose guidelines towards the high noise margin and rail-to-rail inverter design based on nanomaterials.