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Microstructures and characteristics of deep trap levels in ZnO varistors doped with Y_2O_3

Science china(Technological Sciences) 2009年第12期52卷 3668-3673页

作者： liu jun 1 ,hu jun 1 ,he jinliang 1 ,lin yuanhua 2 &long wangcheng 1 1state key laboratory of power systems,department of electrical engineering,tsinghua university,beijing 100084,china 2state key laboratory of New Ceramics and Fine Processing,department of Material Science and engineering,tsinghua university, beijing 100084,china state key laboratory of power systems Department of Electrical Engineering Tsinghua University Beijing China state key laboratory of New Ceramics and Fine Processing Department of Material Science and Engineering Tsinghua University Beijing China

In this paper discussions on ZnO based varistor ceramics doped with different ratios of Y2O3 are *** on the phase and microstructures of the samples indicates that an additional phase is detected in the samples doped with Y2O3,and the average grain size of the specimens decreases from about 9.2μm to 4.5μm,with an increase in the addition of Y2O3 from 0 mol%to 3 mol%.The corresponding varistor’s voltage gradient markedly increases from 462 V/mm to 2340 V/mm,while the nonlinear coefficient decreases from 22.3 to 11.5,***,the characteristics of deep trap levels in these ZnO samples are investigated by measuring their dielectric *** trap energy level and capture cross section evaluated by relaxation peak of the Cole-Cole plot vary slightly as the addition of Y2O3 *** traps may be ascribed to the intrinsic defects of ZnO lattice.

关键词： ZnO varistors Y2O3 electrical properties deep trap levels

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The dependence of sintering temperature on Schottky barrier and bulk electron traps of ZnO varistors

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Science china(Technological Sciences) 2011年第2期54卷 375-378页

作者： liu jun he jinliang hu jun long wangcheng state key laboratory of power systems Department of Electrical Engineering Tsinghua University Beijing 100084 China

In order to investigate the influence of sintering temperature on the Schottky barrier and bulk electron traps of ZnO varistors,ZnO-Bi2O3 based varistor ceramic samples were sintered at 1000,1100,1200 and 1300°C,*** measured results indicate that the sample sintered at 1300°C possesses the lowest voltage gradient and nonlinear coefficient,compared with other *** barrier height of the samples decreased as the sintering temperature increased,which resulted in the deterioration of ***,two bulk electron traps determined by admittance spectroscopy were generally independent of sintering temperature,which indicated that these two traps might originate from the intrinsic defects in ZnO lattice.

关键词：氧化锌压敏电阻器烧结温度电子陷阱肖特基势垒依赖性氧化锌压敏陶瓷非线性系数电压梯度

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Effects of manganese dioxide additives on the electrical characteristics of Al-doped ZnO varistors

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Science china(Technological Sciences) 2011年第8期54卷 2204-2208页

作者： long wangcheng hu jun he jinliang liu jun ZENG Rong state key laboratory of Control and Simulation of power System and Generation Equipment Department of Electrical Engineering Tsinghua University Beijing 100084 China

The effects of manganese dioxide (MnO 2 ) additives on the electrical characteristics of the Al-doped ZnO varistors are investigated. The leakage current densities of the samples decrease first and then increase again with the increase of the amount of MnO 2 additives. Correspondingly, the nonlinear coefficients of the samples keep on increasing and then decrease. In addition, the donor densities increase monotonously with the amount of the doped MnO 2 increasing. The effects of MnO 2 additives on the electrical characteristics of the samples are different from the conclusion of previous literatures. The reasons of the distinct effects are supposed to be related with the donor and interface state densities of the samples.

关键词：氧化锌压敏电阻二氧化锰锰添加剂电气特性铝掺杂漏电流密度非线性系数状态密度

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