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Effect of Rapid Thermal Process on Oxygen Precipitates in Heavily Sb-Doped Silicon Wafer

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Journal of Rare Earths 2006年第Z1期24卷 104-106页

作者： Sun Shilong Hao Qiuyan Zhao Liwei Teng Xiaoyun liu caichi Xu Yuesheng Institute of Information Functional Materials Hebei University of Technology Tianjin 300130 China Institute of Information Functional Materials Hebei University of Technology Tianjin 300130 China Institute of Information Functional Materials Hebei University of Technology Tianjin 300130 China Institute of Information Functional Materials Hebei University of Technology Tianjin 300130 China Institute of Information Functional Materials Hebei University of Technology Tianjin 300130 China Institute of Information Functional Materials Hebei University of Technology Tianjin 300130 China

Oxygen precipitates in heavily Sb-doped silicon after rapid thermal process (RTP) in Ar ambient were investigated by RTP at high temperature following annealing at 800 ℃ for 4 h and 1000 ℃ for 16 h. RTP temperature and cooling rates were changed from 1200 to 1260 ℃ and from 10 to 100 ℃·s-1, respectively. The experiment results show that high density of oxygen precipitates is observed in heavily Sb-doped wafer. It is found that the oxygen precipitates in heavily Sb-doped silicon are enhanced at high cooling rate.

关键词： oxygen precipitates vacancy RTP, DZ heavily Sb-doped silicon

Growth of Czochralski silicon under magnetic field

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Science China(Technological Sciences) 2004年第3期47卷 281-292页

作者： XU Yuesheng liu caichi WANG Haiyun ZHANG Weilian YANG Qingxin LI Yangxian REN Binyan liu Fugui Institute of Information Function Materials Hebei University of Technology Tianjin 300130 China

Growth of Czochralski (CZ) silicon crystals under the magnetic field induced by a cusp-shaped permanent magnet of NdFeB has been investigated. It is found that the mass transport in silicon melt was controlled by its diffusion while the magnetic intensity at the edge of a crucible was over 0.15 T. In comparison with the growth of conventional CZ silicon without magnetic field, the resistivity homogeneity of the CZ silicon under the magnetic field was improved. Furthermore, the Marangoni convection which has a significant influence on the control of oxygen concentration was observed on the surface of silicon melt. It is suggested that the crystal growth mechanism in magnetic field was similar to that in micro-gravity if a critical value was reached, named the growth of equivalent micro-gravity. The relationship of the equivalent micro-gravity and the magnetic intensity was derived as g=(v0/veff)g0. Finally, the orders of the equivalent micro-gravity corresponding to two crucibles with characteristic sizes were calculated.

关键词： Magnetic field equivalent micro-gravity diffusion-controlled mechanism Marangoni convection.

Microstructure of flow pattern defects in boron-doped Czochralski-grown silicon

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Rare Metals 2006年第4期25卷 389-392页

作者： liu caichi HAO Qiuyan ZHANG Jianfeng TENG Xiaoyun Sun Shilong Qigang Zhou WANG Jing XIAO Qinghua Institute of Information Functional Materials Hebei University of Technology Tianjin 300130 China General Re search Institute of Non-ferrous Metals Beijing 100088 China

The morphology and microstructure of flow pattern defects （FPDs） in lightly boron-doped Czochralski-grown silicon （Cz-Si） crystals were investigated using optical microscopy and atomic force microscopy. The experimental results showed that the morphology of FPDs was parabola-like with several steps. Single-type and dual-type voids were found on the tip of FPDs and two heaves exist on the left and right sides of the void. All the results have proved that FPDs were void-type defects. These results are very useful to investigate FPDs in Cz-Si wafers further and explain the annihilation of FPDs during high-temperature annealing.

关键词： flow pattern defects grown-in defects atomic force microscopy Czochralski-grown silicon

Vanadium Defects Formation Mechanism in Undoped GaN Grown on Silicon

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Journal of Rare Earths 2006年第Z1期24卷 41-44页

作者： Zhao Liwei liu caichi Teng Xiaoyun Hao Qiuyan Sun Shilong Zhang Wei School of Material Science and Engineering Hebei University of TechnologyTianjin 300130China

V defects in GaN layer grown on Si(111)using metalorganic chemical vapor deposition(MOCVD)were investigated by atomic force microscopy(AFM),plan-view transmission electron microscopy(TEM)and energy-dispersive X-ray spectrometer(EDS).Dislocations are the origination of V *** field around dislocations induce the concentration of C atoms,furthermore,slow growth rate on those{10-11}planes are suggested as being responsible for the initiation of V *** formation mechanism of V defects was discussed.

关键词： undoped GaN Vanadium defect dislocation transmission electron microscopy

Epitaxial lateral overgrowth of gallium nitride without mask on sapphire

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Epitaxial lateral overgrowth of gallium nitride without mask...

Gettering of Metal Impurities in Silicon by Fast Neutron Irradiation

2006 8th International Conference on Solid-State and Integrated Circuit Technology

作者： Zhang Wei liu caichi Hao Qiuyan Feng Yuchun Information Function Institude HeBei University of Technology

ISBN: (纸本)1424401607

＜正＞GaN has attracted great interest on the world wide during these *** growth technique such as epitaxial lateral overgrowth（ELO） has been proved to be a very effective way to produce a high-quality GaN layer,so many studies made researches on this *** this work,GaN was deposited on sapphire c side（0001） wafers as the ELO theory without mask by Metal Organic Chemical Vapor Deposition（MOCVD）.The growth mechanism was also analyzed and the properties of GaN layer were investigated by double-crystal X-ray diffraction,atomic force microscopy and wet chemical *** result proved that higher-quality GaN layer was received using this method.

关键词： GaN Epitaxial lateral overgrowth without mask ELO MOCVD c-plane(0001) sapphire substrates

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Gettering of Metal Impurities in Silicon by Fast Neutron Irr...

n型单晶硅衬底少子寿命对n-PERC电池性能的影响

1998 5th International Conference on Solid-State and Integrated Circuit Technology

作者： liu caichi Li Yangxian Material Research Center Hebei University of Technology

＜正＞Some irradiated defects were introduced into p-type CZSi by fast-neutron irradiation, they interact with oxygen in CZSi during high temperature annealing,enhance the oxygen out-diffusion on the wafer surface and promote the pricipitation of oxygen in silicon *** combination of fast-neutron irradiation and intrinsic gettering（IG）,a new excellent gettering technology only with one-step high temperature heat-treatment was invented,instead of multistep processing in conventional IG *** our new gettering technology, the metal impurities（Fe,Ni） on the surface of p-type ＜111＞-oriented CZSi wafers was efficiently inhibited.

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太阳能学报 2017年第11期38卷 2958-2963页

作者：刘金颖李宁任丙彦刘彩池河北工业大学信息功能材料研究所天津300130

采用PC1D模拟软件模拟不同少子寿命的硅片条件下电阻率、扩散方块电阻、结深对n-PERC电池性能的影响。结果表明,随着硅片少子寿命的延长,电池效率提高。通过对实际生产中少子寿命和硅片径向不均匀度的研究,得出n-PERC电池使用硅片的最... 详细信息

采用PC1D模拟软件模拟不同少子寿命的硅片条件下电阻率、扩散方块电阻、结深对n-PERC电池性能的影响。结果表明,随着硅片少子寿命的延长,电池效率提高。通过对实际生产中少子寿命和硅片径向不均匀度的研究,得出n-PERC电池使用硅片的最佳少子寿命值。

关键词： n型单晶硅 PC1D模拟 n-PERC电池模型少子寿命

Combination Mechanism of Oxygen in Heavily Sb-doped CZ Silicon

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Combination Mechanism of Oxygen in Heavily Sb-doped CZ Silic...

Microstructure of flow pattern defects in boron-doped Czochralski-grown silicon

1998 5th International Conference on Solid-State and Integrated Circuit Technology

作者： liu caichi Wang Qinglu Li Yangxian Ren Bingyan Xu Yuesheng Que Duanlin National Key Lab of Silicon Material Zhejiang University Material Research Center Hebei University of Technplogy

＜正＞It was determined that oxygen concentration in heavily Sb-doped CZSi was about 40%lower than that in the lightly doped samples and decreased with increasing content of Sb,but don’t decreased in heavily B-doped sample by means of *** thermodynamic calculation,the oxygen loss by evaperation from the free surface of melt is only due to the formation of SiO,and Sb,0,evaperation can be *** main reason for oxygen concentration reduction in heavily Sb-doped CZSi was that oxygen solubility decreased when Sb atoms with larger radius doped degenerately into silicon crystal.

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北京科技大学学报 2006年第8期28卷 793-793页

作者： liu caichi HAO Qiuyan ZHANG Jianfeng TENG Xiaoyun Sun Shilong QigangZhou WANG Jing XIAO Qinghua Institute of Information Functional Materials Hebei University of Technology Tianjin 300130 China General Research Institute of Non-ferrous Metals Beijing 100088 China

The morphology and microstructure of flow pattern defects (FPDs) in lightly boron-doped Czochralski-grown silicon (Cz-Si) crystals were investigated using optical microscopy and atomic force microscopy. The experimental results showed that the morphology of FPDs was parabola-like with several steps. Single-type and dual-type voids were found on the tip of FPDs and two heaves exist on the left and right sides of the void. All the results have proved that FPDs were void-type defects. These results are very useful to investigate FPDs in Cz-Si wafers further and explain the annihilation of FPDs during high-temperature annealing.

关键词：流态缺陷微观结构原子力显微镜方法硼掺杂直拉法单晶硅晶体生长